Half-bridge power semiconductor module and manufacturing method therefor

• US 10,522,517 B2
• Filed: 05/25/2015
• Issued: 12/31/2019
• Est. Priority Date: 07/03/2014
• Status: Active Grant

• Current Assignee: Nissan Motor Co., Ltd.
• Original Assignee: Nissan Motor Co., Ltd.
• Inventors: Tanimoto, Satoshi
• Primary Examiner(s): Nicely, Joseph C.
• Assistant Examiner(s): Koo, Lamont B
• Application Number:
  US15/322,765
• Publication Number:
  US 20170154877A1
• Time in Patent Office: 1,681 Days
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/45014 Ribbon connectors, e.g. rectangular cross-section
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/4903 Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 25/07 : the devices being of a type provided for in group H01L29/00
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/206 : Length ranges
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H05K 1/0209 : External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings
• CPC Class Codes: H05K 2201/066 : Heatsink mounted on the surface of the PCB heatsink inserted in the PCB H05K2201/10416

Abstract

A module (1) includes an insulating substrate (15), a power semiconductor device (13HT), a power semiconductor device (13LT), a bridge terminal (14B), a high-side terminal (14H), and a low-side terminal (14L). The bridge terminal extends from a surface wiring conductor (12B) at a position between the power semiconductor devices (13HT, 13LT). The high-side terminal extends from a high-side rear surface wiring conductor (17H) at a position between the power semiconductor devices (13HT, 13LT). The low-side terminal extends from a low-side rear surface wiring conductor (17L) at a position between the power semiconductor devices (13HT, 13LT). A surface electrode of the power semiconductor device (13HT) and a rear electrode of the power semiconductor device (13LT) are connected to the surface wiring conductor (12B).

Claims

1. A half-bridge power semiconductor module comprising:

an insulating substrate including an insulating plate, a plurality of surface wiring conductors arranged on a surface of the insulating plate, and a high-side rear surface wiring conductor and a low-side rear surface wiring conductor arranged on a rear surface of the insulating plate;

a low-side power semiconductor device having a rear electrode thereof ohmically connected onto a second surface-wiring conductor selected from among the plurality of surface wiring conductors;

a high-side power semiconductor device having a rear electrode ohmically connected onto a first surface-wiring conductor selected from among the plurality of surface wiring conductors, and having a surface electrode thereof ohmically connected to the second surface-wiring conductor;

a bridge terminal extending from the first surface-wiring conductor at a position between the high-side power semiconductor device and the low-side power semiconductor device;

a first connection portion which is arranged on an opposite side from the low-side power semiconductor device relative to the high-side power semiconductor device in a plan view of the half-bridge power semiconductor module, and which ohmically connects the first surface-wiring conductor and the high-side rear surface wiring conductor;

a second connection portion which is arranged entirely on an opposite side from the high-side power semiconductor device relative to the low-side power semiconductor device in a plan view of the half-bridge power semiconductor module, and which ohmically connects a surface electrode of the low-side power semiconductor device and the low-side rear surface wiring conductor;

a high-side terminal which extends from the high-side rear surface wiring conductor at a position between the high-side power semiconductor device and the low-side power semiconductor device, and through which current flows from a positive electrode of a power supply; and

a low-side terminal which extends from the low-side rear surface wiring conductor at a position between the high-side power semiconductor device and the low-side power semiconductor device, and through which current flows to a negative electrode of the power supply.

2. The half-bridge power semiconductor module according to claim 1, wherein

a direction of a main current flowing between the high-side terminal and the bridge terminal via the high-side power semiconductor device and a direction of a main current flowing between the low-side terminal and the bridge terminal via the low-side power semiconductor device are opposite to each other across the insulating plate.

3. The half-bridge power semiconductor module according to claim 1, wherein

among the main currents flowing via the high-side power semiconductor device, a current gravity center line of a main current flowing on a surface side of the insulating plate coincides with a current gravity center line of a main current flowing on a rear surface side of the insulating plate, when seen from a normal direction of the insulating plate.

4. The half-bridge power semiconductor module according to claim 1, wherein

among the main currents flowing via the low-side power semiconductor device, a current gravity center line of a main current flowing on a surface side of the insulating plate coincides with a current gravity center line of a main current flowing on a rear surface side of the insulating plate, when seen from a normal direction of the insulating plate.

5. The half-bridge power semiconductor module according to claim 1, wherein

the high-side power semiconductor device and the low-side power semiconductor device are controlled so as to be exclusively turned on.

6. The half-bridge power semiconductor module according to claim 1, wherein

any one of the high-side power semiconductor device and the low-side power semiconductor device is a power switching element, and the other one is a power diode.

7. The half-bridge power semiconductor module according to claim 1, wherein

any one of or both of the high-side power semiconductor device and the low-side power semiconductor device includes or include a pair of a power switching element and high-speed recirculating power diode connected in parallel to each other.

8. The half-bridge power semiconductor module according to claim 7, wherein

when one of the high-side power semiconductor device and the low-side power semiconductor device is turned off, a direction of a circulating current flowing via the high-speed recirculating power diode of the other one or via a diode built in the power switching element is opposite across the insulating plate.

9. The half-bridge power semiconductor module according to claim 1, wherein

the insulating substrate further includes:

a second insulating plate arranged on a rear surfaces of the high-side rear surface wiring conductor and the low-side rear surface wiring conductor; and

a metal plate arranged on the rear surface of the second insulating plate.

10. A manufacturing method for a half-bridge power semiconductor module, the module including:

an insulating substrate including an insulating plate, a plurality of surface wiring conductors arranged on a surface of the insulating plate, and a high-side rear surface wiring conductor and a low-side rear surface wiring conductor arranged on a rear surface of the insulating plate;

a low-side power semiconductor device having a rear electrode thereof ohmically connected onto a second surface-wiring conductor selected from among the plurality of surface wiring conductors;

a high-side power semiconductor device having a rear electrode ohmically connected onto a first surface-wiring conductor selected from among the plurality of surface wiring conductors, and having a surface electrode thereof ohmically connected to the second surface-wiring conductor;

a bridge terminal extending from the first surface-wiring conductor at a position between the high-side power semiconductor device and the low-side power semiconductor device;

a first connection portion which is arranged on an opposite side from the low-side power semiconductor device relative to the high-side power semiconductor device in a plan view of the half-bridge power semiconductor module, and which ohmically connects the first surface-wiring conductor and the high-side rear surface wiring conductor;

a second connection portion which is arranged entirely on an opposite side from the high-side power semiconductor device relative to the low-side power semiconductor device in a plan view of the half-bridge power semiconductor module, and which ohmically connects a surface electrode of the low-side power semiconductor device and the low-side rear surface wiring conductor;

a high-side terminal which extends from the high-side rear surface wiring conductor at a position between the high-side power semiconductor device and the low-side power semiconductor device, and through which current flows from a positive electrode of a power supply; and

a low-side terminal which extends from the low-side rear surface wiring conductor at a position between the high-side power semiconductor device and the low-side power semiconductor device, and through which current flows to a negative electrode of the power supply, the method comprising the steps of;

preparing the insulating substrate;

adhering the high-side power semiconductor device and the low-side power semiconductor device onto the first surface-wiring conductor and the second surface-wiring conductor, respectively;

ohmically connecting the surface electrode of the high-side power semiconductor device and the second surface-wiring conductor; and

ohmically connecting the surface electrode of the low-side power semiconductor device and the low-side rear surface wiring conductor.