Switch including a phase change materials based structure where only one part is activatable
First Claim
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1. A selector switch capable of making or breaking a connection between at least one first conducting element and at least one second conducting element, comprising the following, on a support:
- a structure based on at least one phase change material located between the first conducting element and the second conducting element, the phase change material being capable of changing state between a crystalline state wherein the phase change material has a first resistivity and an amorphous state wherein the phase change material has a second resistivity higher than the first resistivity,means of heating the phase change material provided with at least one first heating electrode and at least one second heating electrode,wherein the phase change material structure is formed from at least one central region located between the first conducting element and the second conducting element and between the first electrode and the second electrode, andwherein the phase change material structure is formed between the first electrode and the second electrode of a stack comprising a first layer of phase change material located between a second layer of phase change material and a third layer of a phase change material, the sections of the second layer of phase change material and the third layer of phase change material becoming narrower as the distances from the first electrode and the second electrode respectively increase and as the distance from the first layer of phase change material reduces.
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Abstract
Selector switch provided with:
- a structure based on at least one phase change material placed between a first conducting element and a second conducting element, the phase change material being capable of changing state,
- means of heating the phase change material provided with at least one first heating electrode and at least one other heating electrode,
- the structure based on a phase change material being configured to form a confined active zone of the phase change material at a distance from the conducting elements.
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Citations
19 Claims
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1. A selector switch capable of making or breaking a connection between at least one first conducting element and at least one second conducting element, comprising the following, on a support:
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a structure based on at least one phase change material located between the first conducting element and the second conducting element, the phase change material being capable of changing state between a crystalline state wherein the phase change material has a first resistivity and an amorphous state wherein the phase change material has a second resistivity higher than the first resistivity, means of heating the phase change material provided with at least one first heating electrode and at least one second heating electrode, wherein the phase change material structure is formed from at least one central region located between the first conducting element and the second conducting element and between the first electrode and the second electrode, and wherein the phase change material structure is formed between the first electrode and the second electrode of a stack comprising a first layer of phase change material located between a second layer of phase change material and a third layer of a phase change material, the sections of the second layer of phase change material and the third layer of phase change material becoming narrower as the distances from the first electrode and the second electrode respectively increase and as the distance from the first layer of phase change material reduces. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A selector switch capable of making or breaking a connection between at least one first conducting element and at least one second conducting element, comprising the following, on a support:
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a structure based on at least one phase change material located between the first conducting element and the second conducting element, the phase change material being capable of changing state between a crystalline state wherein the phase change material has a first resistivity and an amorphous state wherein the phase change material has a second resistivity higher than the first resistivity, means of heating the phase change material provided with at least one first heating electrode and at least one second heating electrode, wherein the phase change material structure is formed from at least one central region located between the first conducting element and the second conducting element and between the first electrode and the second electrode, and wherein the first electrode and the second electrode are located in a plane orthogonal to the principal plane of the support, the phase change material structure is formed between the first electrode and the second electrode of a stack comprising a first layer of a first phase change material located between a second layer of phase change material and a third layer of phase change material, at least the first layer of phase change material comprising a thinned portion located between a portion of the second layer of phase change material and a portion of the third layer of phase change material. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification