Dynamic impedance circuit for uniform voltage distribution in a high power switch branch

• US 10,530,357 B1
• Filed: 11/12/2018
• Issued: 01/07/2020
• Est. Priority Date: 11/12/2018
• Status: Active Grant

• Current Assignee: Newport Fab, LLC (Tower Semiconductor Limited)
• Original Assignee: Newport Fab, LLC (Tower Semiconductor Limited)
• Inventors: Kanawati, Roda, Hurwitz, Paul D.
• Primary Examiner(s): Luu, An T
• Application Number:
  US16/188,131
• Time in Patent Office: 421 Days
• CPC Class Codes: H01L 23/535 including internal interconnections, e.g. cross-under constructions internal lead connections H01L23/481
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H03H 11/28 Impedance matching networks
• CPC Class Codes: H03K 17/063 in field-effect transistor switches
• CPC Class Codes: H03K 17/102 in field-effect transistor switches
• CPC Class Codes: H03K 2217/0018 Special modifications or use of the back gate voltage of a FET

Abstract

A high power semiconductor switch including a plurality of transistor switch circuits connected in series between first and second ports. A first set of transistor switch circuits is located immediately adjacent to the first port, a second set of transistor switch circuits is located immediately adjacent to the second port, and a third set of transistor switch structures are located between the first and second sets. Each transistor switch circuit of the first and second set includes a switching transistor and a dynamic impedance circuit, wherein the dynamic impedance circuit reduces the effective impedance of the corresponding switching transistor when an RF signal is being transmitted. The dynamic impedance circuits are designed to reduce and equalize the voltage drops across the switching transistors of the first and second sets.

Claims

1. A semiconductor switch comprising:

a first port configured to receive a radio frequency (RF) signal;

a first transistor switch circuit connected to the first port, wherein the first transistor switch circuit includes a first transistor coupled to the first port, a source/drain resistor coupled in parallel with the first transistor, and a first dynamic impedance circuit coupled in parallel with the first transistor, wherein the first dynamic impedance circuit reduces an impedance of the first transistor switch circuit when an RF signal received on the first port is transmitted through the first transistor; and

a plurality of transistor switch circuits coupled in series between the first transistor switch circuit and a second port.

2. The semiconductor switch of claim 1, further comprising:

a second transistor switch circuit coupled between the first transistor switch circuit and the plurality of transistor switch circuits, wherein the second transistor switch circuit includes a second transistor coupled in series with the first transistor, and a second dynamic impedance circuit coupled in parallel with the second transistor, wherein the second dynamic impedance circuit reduces an impedance of the second transistor switch circuit when an RF signal received on the first port is transmitted through the second transistor.

3. The semiconductor switch of claim 2, wherein the first dynamic impedance circuit reduces the impedance of the first transistor switch circuit to provide a first peak voltage drop across the first transistor, and the second impedance circuit reduces the impedance of the second transistor switch circuit to provide a second peak voltage drop across the second transistor, wherein the first peak voltage drop is the same as the second peak voltage drop.

4. The semiconductor switch of claim 1, wherein there are no dynamic impedance circuits included in the plurality of transistor switch circuits.

5. The semiconductor switch of claim 1, further comprising:

a second transistor switch circuit coupled between the second port and the plurality of transistor switch circuits, wherein the second transistor switch circuit includes a second transistor coupled in series with the first transistor and the plurality of transistor switch circuits, and a second dynamic impedance circuit coupled in parallel with the second transistor, wherein the second dynamic impedance circuit reduces an impedance of the second transistor switch circuit when an RF signal received on the second port is transmitted through the second transistor.

6. The semiconductor switch of claim 5, further comprising:

a third transistor switch circuit coupled between the second transistor and the plurality of transistor switch circuits, wherein the third transistor switch circuit includes a third transistor coupled in series with the first transistor, the second transistor and the plurality of transistor switch circuits, and a third dynamic impedance circuit coupled in parallel with the third transistor, wherein the third dynamic impedance circuit reduces an impedance of the third transistor switch circuit when an RF signal received on the second port is transmitted through the third transistor.

7. A semiconductor switch comprising:

a first port configured to receive a radio frequency (RF) signal;

a first transistor switch circuit connected to the first port, wherein the first transistor switch circuit includes a first transistor coupled to the first port and a first dynamic impedance circuit coupled in parallel with the first transistor, wherein the first dynamic impedance circuit includes;

a first diode connected in series with a first resistor to form a first diode/resistor pair, wherein the first diode/resistor pair is coupled in parallel with the first transistor; and

a second diode connected in series with a second resistor to form a second diode/resistor pair, wherein the second diode/resistor pair is coupled in parallel with the first transistor;

wherein the first dynamic impedance circuit reduces an impedance of the first transistor switch circuit when an RF signal received on the first port is transmitted through the first transistor; and

a plurality of transistor switch circuits coupled in series between the first transistor switch circuit and a second port.

8. The semiconductor switch of claim 7, wherein the first diode and the second diode are configured in opposite directions.

9. A semiconductor switch comprising:

a first port configured to receive a radio frequency (RF) signal;

a first transistor switch circuit connected to the first port, wherein the first transistor switch circuit includes a first transistor coupled to the first port and a first dynamic impedance circuit coupled in parallel with the first transistor, wherein the first dynamic impedance circuit includes;

a first diode connected in series with a first resistor to form a first diode/resistor pair, wherein the first diode/resistor pair is coupled in parallel with the first transistor; and

a second diode connected in series with a second resistor to form a second diode/resistor pair, wherein the second diode/resistor pair is coupled in parallel with the first transistor;

wherein the first dynamic impedance circuit reduces an impedance of the first transistor switch circuit when an RF signal received on the first port is transmitted through the first transistor;

a plurality of transistor switch circuits coupled in series between the first transistor switch circuit and a second port; and

a second transistor switch circuit coupled between the first transistor switch circuit and the plurality of transistor switch circuits, wherein the second transistor switch circuit includes a second transistor coupled in series with the first transistor, and a second dynamic impedance circuit coupled in parallel with the second transistor, wherein the second dynamic impedance circuit includes;

a third diode connected in series with a third resistor to form a third diode/resistor pair, wherein the third diode/resistor pair is coupled in parallel with the second transistor; and

a fourth diode connected in series with a fourth resistor to form a fourth diode/resistor pair, wherein the fourth diode/resistor pair is coupled in parallel with the second transistor

wherein the second dynamic impedance circuit reduces an impedance of the second transistor switch circuit when an RF signal received on the first port is transmitted through the second transistor.

10. The semiconductor switch of claim 9, wherein the first diode and the second diode each have a first size, and the third diode and the fourth diode each have a second size, different than the first size.

11. The semiconductor switch of claim 10, wherein the first size is larger than the second size.

12. The semiconductor switch of claim 11, wherein the first resistance is less than the second resistance.

13. The semiconductor switch of claim 9, wherein the first resistor and the second resistor each have a first resistance, and the third resistor and the fourth resistor each have a second resistance, different than the first resistance.

14. A semiconductor switch comprising:

a first port configured to receive a radio frequency (RF) signal;

a first transistor switch circuit connected to the first port, wherein the first transistor switch circuit includes a first transistor coupled to the first port and a first dynamic impedance circuit coupled in parallel with the first transistor, wherein the first transistor comprises;

a gate electrode having a plurality of gate fingers that extend in parallel over an active region, wherein a channel region having a first conductivity type is located under each of the plurality of gate fingers;

a plurality of source regions having a second conductivity type, opposite the first conductivity type, formed in the active region, wherein each of the plurality of source regions abuts the channel region;

a plurality of drain regions having the second conductivity type formed in the active region, wherein each of the plurality of drain regions abuts the channel region, and wherein the drain regions are interleaved with the source regions;

a first interconnect structure that commonly connects each of the plurality of source regions; and

a second interconnect structure that commonly connects each of the plurality of drain regions;

wherein the first dynamic impedance circuit reduces an impedance of the first transistor switch circuit when an RF signal received on the first port is transmitted through the first transistor; and

a plurality of transistor switch circuits coupled in series between the first transistor switch circuit and a second port.

15. The semiconductor switch of claim 14, wherein the first transistor switch circuit comprises:

a first resistor connected to the gate electrode;

a second resistor connected to the channel region; and

a third resistor connected across the first and second interconnect structures.

16. A method of operating a radio frequency (RF) switch comprising:

transmitting an RF signal between a first port and a second port through a plurality of series-connected transistor switch circuits, including a first plurality of transistor switch circuits located immediately adjacent to the first port, and a second plurality of transistor switch circuits located between the second port and the first plurality of transistor switch circuits; and

dynamically adjusting impedances of the first plurality of transistor switch circuits by forward biasing diodes within the first plurality of transistor switch circuits when transmitting the RF signal from the first port to the second port, wherein dynamically adjusting the impedances of the first plurality of transistor switch circuits equalizes peak voltage drops across the first plurality of transistor switch circuits.

17. A method of operating a radio frequency (RF) switch comprising:

transmitting an RF signal between a first port and a second port through a plurality of series-connected transistor switch circuits, including a first plurality of transistor switch circuits located immediately adjacent to the first port, a second plurality of transistor switch circuits located between the second port and the first plurality of transistor switch circuits, and a third plurality of transistor switch circuits located immediately adjacent to the second port;

dynamically adjusting impedances of the first plurality of transistor switch circuits when transmitting the RF signal from the first port to the second port, wherein dynamically adjusting the impedances of the first plurality of transistor switch circuits equalizes peak voltage drops across the first plurality of transistor switch circuits; and

dynamically adjusting impedances of the third plurality of transistor switch circuits when transmitting the RF signal from the second port to the first port, wherein dynamically adjusting the impedances of the third plurality of transistor switch circuits equalizes peak voltage drops across the third plurality of transistor switch circuits.

18. A semiconductor switch comprising:

a first port configured to receive a radio frequency (RF) signal;

a first plurality of transistor switch circuits connected in series with the first port, wherein each of the first plurality of transistor switch circuits includes a first transistor, a first source/drain resistor coupled in parallel with the first transistor, and a first dynamic impedance circuit coupled in parallel with the first transistor, wherein within each of the first plurality of transistor switch circuits, the first dynamic impedance circuit reduces an effective impedance of the first transistor when an RF signal received on the first port is transmitted through the first transistor; and

a second plurality of transistor switch circuits connected in series between the first plurality of transistor switch circuits and a second port, wherein each of the second plurality of transistor switch circuits includes a second transistor and a second source/drain resistor coupled in parallel with the second transistor, and wherein each second transistor is connected in series with each first transistor.

19. A semiconductor switch comprising:

a first port configured to receive a radio frequency (RF) signal;

a first plurality of transistor switch circuits connected in series with the first port, wherein each of the first plurality of transistor switch circuits includes a first transistor and a first dynamic impedance circuit coupled in parallel with the first transistor, wherein within each of the first plurality of transistor switch circuits, the first dynamic impedance circuit reduces an effective impedance of the first transistor when an RF signal received on the first port is transmitted through the first transistor;

a second plurality of transistor switch circuits connected in series between the first plurality of transistor switch circuits and a second port, wherein each of the second plurality of transistor switch circuits includes a second transistor, and wherein each second transistor is connected in series with each first transistor; and

a third plurality of transistor switch circuits connected in series between the second plurality of transistor switch circuits and the second port, wherein each of the third plurality of transistor switch circuits includes a third transistor and a third dynamic impedance circuit coupled in parallel with the third transistor, wherein within each of the third plurality of transistor switch circuits, the third dynamic impedance circuit reduces an effective impedance of the third transistor when an RF signal received on the second port is transmitted through the third transistor.