Three-dimensional memory devices and fabricating methods thereof
First Claim
1. A method for forming a three-dimensional (3D) memory device, comprising:
- forming an alternating dielectric stack and a first insulating layer on a substrate, the alternating dielectric stack comprising a plurality of first dielectric layers and second dielectric layers;
forming a channel hole penetrating the first insulating layer and the alternating dielectric stack, a first diameter of a lower portion of the channel hole being smaller than a second diameter of an upper portion of the channel hole;
forming a channel structure comprising a functional layer in the channel hole, the functional layer comprising a storage layer;
forming an electrode plug in the upper portion of the channel hole;
replacing the storage layer in the functional layer in the upper portion of the channel hole with a second insulating layer; and
replacing the plurality of second dielectric layers in the alternating dielectric stack with a plurality of conductive layers.
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Abstract
A method for forming a 3D memory device is disclosed. The method includes: forming an alternating dielectric stack including multiple first dielectric layers and second dielectric layers on a substrate; forming a channel hole penetrating the alternating dielectric stack, a first diameter of a lower portion of the channel hole being smaller than a second diameter of an upper portion of the channel hole; forming a channel structure including a functional layer in the channel hole, the functional layer including a storage layer; forming an electrode plug in the upper portion of the channel hole; replacing the storage layer in the functional layer in the upper portion of the channel hole with a second insulating layer; and replacing the second dielectric layers in the alternating dielectric stack with conductive layers.
15 Citations
20 Claims
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1. A method for forming a three-dimensional (3D) memory device, comprising:
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forming an alternating dielectric stack and a first insulating layer on a substrate, the alternating dielectric stack comprising a plurality of first dielectric layers and second dielectric layers; forming a channel hole penetrating the first insulating layer and the alternating dielectric stack, a first diameter of a lower portion of the channel hole being smaller than a second diameter of an upper portion of the channel hole; forming a channel structure comprising a functional layer in the channel hole, the functional layer comprising a storage layer; forming an electrode plug in the upper portion of the channel hole; replacing the storage layer in the functional layer in the upper portion of the channel hole with a second insulating layer; and replacing the plurality of second dielectric layers in the alternating dielectric stack with a plurality of conductive layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A three-dimensional (3D) memory device, comprising:
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an alternating layer stack on a substrate; a first insulating layer covering the alternating layer stack; a channel hole penetrating the first insulating layer and the alternating layer stack, a first diameter of a lower portion of the channel hole being smaller than a second diameter of an upper portion of the channel hole; a channel structure comprising a functional layer in the lower portion of the channel hole; and a top selective gate structure above the lower portion of the channel hole, comprising; an electrode plug in the upper portion of the channel hole, and a second insulating layer between the electrode plug and a top conductive layer of the alternating layer stack. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification