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Three-dimensional memory devices and fabricating methods thereof

  • US 10,541,249 B2
  • Filed: 09/10/2018
  • Issued: 01/21/2020
  • Est. Priority Date: 08/31/2017
  • Status: Active Grant
First Claim
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1. A method for forming a three-dimensional (3D) memory device, comprising:

  • forming an alternating dielectric stack and a first insulating layer on a substrate, the alternating dielectric stack comprising a plurality of first dielectric layers and second dielectric layers;

    forming a channel hole penetrating the first insulating layer and the alternating dielectric stack, a first diameter of a lower portion of the channel hole being smaller than a second diameter of an upper portion of the channel hole;

    forming a channel structure comprising a functional layer in the channel hole, the functional layer comprising a storage layer;

    forming an electrode plug in the upper portion of the channel hole;

    replacing the storage layer in the functional layer in the upper portion of the channel hole with a second insulating layer; and

    replacing the plurality of second dielectric layers in the alternating dielectric stack with a plurality of conductive layers.

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