Array substrate and method for manufacturing the same
First Claim
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1. An array substrate comprising:
- at least a first region and a second region, each first region including a first thin film transistor and each second region including a second thin film transistor;
wherein a thickness of an active layer of the first thin film transistor in the first region is greater than that of an active layer of the second thin film transistor in the second region; and
wherein an overlapped area between a source electrode or a drain electrode and the active layer of the first thin film transistor in the first region is larger than that between a source electrode or a drain electrode and the active layer of the second thin film transistor in the second region, so that a ratio of the overlapped area between the source electrode or the drain electrode and the active layer to the thickness of the active layer for each of the first thin film transistor and the second thin film transistor is kept uniform over the first region and the second region.
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Abstract
The present disclosure relates to an array substrate and a method for manufacturing the same. The array substrate includes a thin film transistor and comprises at least a first region and a second region. A thickness of an active layer of the thin film transistor in the first region is different from that of an active layer of the thin film transistor in the second region. A ratio of the overlapped area between the source electrode or the drain electrode and the active layer of the thin film transistor to the thickness of the active layer is kept uniform over the first region and the second region.
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18 Claims
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1. An array substrate comprising:
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at least a first region and a second region, each first region including a first thin film transistor and each second region including a second thin film transistor; wherein a thickness of an active layer of the first thin film transistor in the first region is greater than that of an active layer of the second thin film transistor in the second region; and wherein an overlapped area between a source electrode or a drain electrode and the active layer of the first thin film transistor in the first region is larger than that between a source electrode or a drain electrode and the active layer of the second thin film transistor in the second region, so that a ratio of the overlapped area between the source electrode or the drain electrode and the active layer to the thickness of the active layer for each of the first thin film transistor and the second thin film transistor is kept uniform over the first region and the second region. - View Dependent Claims (2, 3, 4, 5, 6, 15, 16, 17)
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7. A method for manufacturing an array substrate, comprising steps of:
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obtaining a variation of a thickness of an active layer depending on a position on a substrate, the active layer having at least a first region with a larger thickness and a second region with a second thickness, the first thickness being larger than the second thickness; determining an overlapped area between a source electrode or a drain electrode and the active layer of a thin film transistor to be formed according to the variation such that a ratio of the overlapped area to the thickness of the active layer is kept uniform over the first region and the second region; and forming the thin film transistor on the substrate such that the formed thin film transistor has the determined overlapped area. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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18. An array substrate comprising a thin film transistor, wherein the array substrate comprises at least a first region and a second region;
- a thickness of an active layer of the thin film transistor in the first region is greater than that of an active layer of the thin film transistor in the second region, and an overlapped area between a source electrode or a drain electrode and the active layer of the thin film transistor in the first region is larger than that between a source electrode or a drain electrode and the active layer of the thin film transistor in the second region, so that a ratio of the overlapped area between the source electrode or the drain electrode and the active layer of the thin film transistor to the thickness of the active layer is kept uniform over the first region and the second region;
wherein a curve of a variation of the thickness of the active layer of the thin film transistor in at least one of the first region and the second region depending on a position of the active layer is represented by a fitting function, and the overlapped area between the source electrode or the drain electrode and the active layer of the thin film transistor in the at least one of the first region and the second region changes in proportion to the fitting function.
- a thickness of an active layer of the thin film transistor in the first region is greater than that of an active layer of the thin film transistor in the second region, and an overlapped area between a source electrode or a drain electrode and the active layer of the thin film transistor in the first region is larger than that between a source electrode or a drain electrode and the active layer of the thin film transistor in the second region, so that a ratio of the overlapped area between the source electrode or the drain electrode and the active layer of the thin film transistor to the thickness of the active layer is kept uniform over the first region and the second region;
Specification