Surface-mounted light-emitting device and fabrication method thereof

• US 10,559,732 B2
• Filed: 12/03/2016
• Issued: 02/11/2020
• Est. Priority Date: 05/24/2013
• Status: Active Grant

• Current Assignee: Quanzhou Sanan Semiconductor Technology Co., Ltd. (Sanan Optoelectronics Company Limited)
• Original Assignee: Xiamen Sanan Optoelectronics Technology Company Limited (Sanan Optoelectronics Company Limited)
• Inventors: Huang, Shaohua, Zeng, Xiaoqiang, Chao, Chih-Wei
• Primary Examiner(s): Swanson, Walter H
• Assistant Examiner(s): Ly, Kien C
• Application Number:
  US15/368,599
• Publication Number:
  US 20170084808A1
• Time in Patent Office: 1,165 Days
• Field of Search: None
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A surface-mounted light-emitting device is fabricated by epitaxial growth: forming the LED epitaxial structure over a growth substrate through epitaxial growth; chip fabrication: determining P and N electrode regions and an isolating region over the LED epitaxial structure surface and fabricating the P and N electrode pads and the insulator over the P and N electrode regions and the isolating region, wherein the P and N electrode pads have sufficient thicknesses to support the LED epitaxial structure, and the insulator is formed between the P and N electrode pads to prevent the P and N electrode pads from a short circuit; removing the growth substrate and unitizing the LED epitaxial structure to form the chip; and SMT packaging: providing the supporting substrate and directly mounting the P and N electrode pads of the chip over the supporting substrate through SMT packaging to thereby form the surface-mounted LED light-emitting device.

Claims

1. A method of fabricating a surface-mounted light-emitting diode (LED) light-emitting device, the method comprising:

1) epitaxial growth;

form an LED epitaxial structure over a growth substrate through epitaxial growth;

2) chip fabrication;

determine P and N electrode regions and an isolating region on a surface of the LED epitaxial structure; and

fabricate P and N electrode pads and an insulator over the P and N electrode regions and the isolating region, respectively on the surface of the LED epitaxial structure,

wherein the insulator fabricated on the surface of the LED epitaxial structure has opposite a first insulator surface and a second insulator surface,

wherein the first insulator surface is adjacent to the LED epitaxial structure and the second insulator surface extrudes beyond either of the second electrode surfaces of the P and N electrode pads to prevent the P and N electrode pads from short circuiting when directly applied in the SMT packaging;

wherein the P and N electrode pads have sufficient thicknesses to support the LED epitaxial structure, and the insulator is formed between the P and N electrode pads to prevent the P and N electrode pads from a short circuit;

remove the growth substrate and unitize the LED epitaxial structure to form a LED chip;

3) Surface-Mounted Technology (SMT) packaging;

provide a supporting substrate and directly mount the P and N electrode pads of the LED chip over the supporting substrate through SMT packaging to thereby form the surface-mounted LED light-emitting device;

wherein in step

     2), after the growth substrate is removed, the method further comprising etching the LED epitaxial structure to form a cutting path, and physically cutting the electrode pads over the cutting path to ensure that edges of the P and N electrode pads are beyond an edge of the LED epitaxial structure with a specified distance, thereby forming a series of LED chips.

2. The method of claim 1, wherein in step 2), a melting point or softening point of the insulator material is lower than melting points of the P and N electrode pads.

3. The method of claim 1, wherein the insulator comprises a colloid material.

4. The method of claim 1, wherein in step 3), the P and N electrode pads of the LED chip are connected to the supporting substrate through reflow soldering.

5. A method of fabricating a surface-mounted light-emitting diode (LED) light-emitting device, the method comprising:

1) epitaxial growth;

form an LED epitaxial structure over a growth substrate through epitaxial growth;

2) chip fabrication;

determine P and N electrode regions and an isolating region on a surface of the LED epitaxial structure; and

fabricate P and N electrode pads and an insulator over the P and N electrode regions and the isolating region, respectively on the surface of the LED epitaxial structure,

wherein the insulator fabricated on the surface of the LED epitaxial structure has opposite a first insulator surface and a second insulator surface,

wherein the first insulator surface is adjacent to the LED epitaxial structure and the second insulator surface extrudes beyond either of the second electrode surfaces of the P and N electrode pads to prevent the P and N electrode pads from short circuiting when directly applied in the SMT packaging;

wherein the P and N electrode pads have sufficient thicknesses to support the LED epitaxial structure, and the insulator is formed between the P and N electrode pads to prevent the P and N electrode pads from a short circuit;

remove the growth substrate and unitize the LED epitaxial structure to form a LED chip;

3) Surface-Mounted Technology (SMT) packaging;

provide a supporting substrate and directly mount the P and N electrode pads of the LED chip over the supporting substrate through SMT packaging to thereby form the surface-mounted LED light-emitting device;

wherein in step

     3), the supporting substrate has a surface coated with a solder layer with a thickness smaller than or equal to a height difference between the second insulator surface and either of the second electrode surfaces of the P and N electrode pads, wherein the insulator extends through the solder layer and is in contact with the solder layer and the supporting substrate, wherein a distance between edges of the P and N electrode pads beyond that of the LED epitaxial structure is D, a minimum thickness of the P and N electrode pads is T, and wherein D/T is 0.5-2.