Enhanced visible near-infrared photodiode and non-invasive physiological sensor

• US 10,568,514 B2
• Filed: 07/08/2019
• Issued: 02/25/2020
• Est. Priority Date: 09/18/2014
• Status: Active Grant

• Current Assignee: Masimo Semiconductor Inc. (Masimo Corporation)
• Original Assignee: Masimo Semiconductor Inc. (Masimo Corporation)
• Inventors: Wojtczuk, Steven J., Zhang, Xuebing, MacNeish, III, William J.
• Primary Examiner(s): Porta, David P
• Assistant Examiner(s): Malevic, Djura
• Application Number:
  US16/505,364
• Publication Number:
  US 20200000340A1
• Time in Patent Office: 232 Days
• CPC Class Codes: A61B 2562/0238 Optical sensor arrangements for performing transmission measurements on body tissue
• CPC Class Codes: A61B 5/0059 using light, e.g. diagnosis by transillumination, diascopy, fluorescence A61B5/0093, A61B5/1455, A61B5/02416 and A61B5/0261 take precedence
• CPC Class Codes: A61B 5/6826 Finger
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors
• CPC Class Codes: H01L 31/03046 including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials

Abstract

Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.

Claims

1. A physiological sensor for measuring physiological parameters of a monitored patient, the physiological sensor comprising:

a sensor housing;

an emitter configured to emit optical radiation at one or more wavelengths; and

one or more detectors configured to be positioned proximate to the emitter and tissue of a patient by the sensor housing, the one or more detectors comprising a semiconductor device configured to detect the optical radiation after attenuation by the tissue and generate a detector signal responsive to the detected optical radiation,

wherein the semiconductor device comprises a window layer, a diffusion region, an absorption region, and a semiconductor wafer, the absorption region being between the window layer and the semiconductor wafer, and

wherein the window layer has a thickness ranging from about 25 nm to about 150 nm, the diffusion region being a p-type region, the absorption region being an undoped region or a n-type region, the semiconductor wafer being the n-type region.

2. The physiological sensor of claim 1, wherein the absorption region is adjacent to the semiconductor wafer.

3. The physiological sensor of claim 1, wherein the window layer and the diffusion region are configured to receive the optical radiation prior to the absorption region and the semiconductor wafer receiving the optical radiation.

4. The physiological sensor of claim 3, wherein the absorption region is configured to receive the optical radiation prior to the semiconductor wafer receiving the optical radiation.

5. The physiological sensor of claim 1, further comprising:

a first metal contact adjacent to the semiconductor wafer; and

a second metal contact adjacent to the window layer.

6. The physiological sensor of claim 5, wherein the first metal contact is the n-type region, and the second metal contact is the p-type region.

7. The physiological sensor of claim 1, wherein the window layer, the diffusion region, the absorption region, and the semiconductor wafer form at least part of a photodiode.

8. The physiological sensor of claim 1, wherein the thickness ranges from about 50 nm to about 100 nm.

9. The physiological sensor of claim 1, wherein the thickness is about 50 nm.

10. The physiological sensor of claim 1, wherein the absorption region comprises indium, gallium, and arsenic, and the window layer comprises indium, aluminum, and arsenic.

11. The physiological sensor of claim 1, wherein the absorption region comprises indium, gallium, and arsenic, and the window layer comprises indium and phosphorus.

12. The physiological sensor of claim 1, wherein the window layer is not lattice matched to the semiconductor wafer.

13. The physiological sensor of claim 1, wherein the window layer is lattice matched to the semiconductor wafer.

14. The physiological sensor of claim 1, further comprising an anti-reflective coating on the window layer.

15. The physiological sensor of claim 1, wherein the diffusion region is part of the window layer and the absorption region.

16. The physiological sensor of claim 1, wherein the window layer is the p-type region.

17. The physiological sensor of claim 1, wherein the semiconductor device has a surface area of at least 5 mm² over which the semiconductor device is configured to detect the optical radiation after attenuation by the tissue.

18. The physiological sensor of claim 1, wherein the semiconductor device is configured to generate the detector signal to have a current of at least 100 nA.

19. The physiological sensor of claim 1, in combination with a patient monitor configured to determine a measurement value for a physiological parameter from the detector signal.

20. The physiological sensor of claim 19, in combination with the patient monitor, wherein the physiological parameter comprises a blood analyte.