Thin film transistor, method for manufacturing the same, and semiconductor device

  • US 10,586,811 B2
  • Filed: 10/04/2018
  • Issued: 03/10/2020
  • Est. Priority Date: 02/20/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor;

    a second transistor;

    a capacitor; and

    a light-emitting element,wherein each of the first transistor and the second transistor comprises;

    a gate electrode;

    an oxide semiconductor layer overlapping with the gate electrode with a first insulating layer interposed therebetween;

    a source electrode electrically connected to the oxide semiconductor layer;

    a drain electrode electrically connected to the oxide semiconductor layer;

    a first conductive layer between the oxide semiconductor layer and the source electrode; and

    a second conductive layer between the oxide semiconductor layer and the drain electrode,wherein one electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the first transistor and the gate electrode of the second transistor,wherein the light-emitting element is electrically connected to one of the source electrode and the drain electrode of the second transistor,wherein the first insulating layer includes a contact hole in a region where the first transistor, the second transistor, and the capacitor are not overlapped with each other, andwherein the gate electrode of the second transistor is electrically connected to the one of the source electrode and the drain electrode of the first transistor through the contact hole.

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