Multilayer device

• US 10,586,847 B2
• Filed: 01/15/2016
• Issued: 03/10/2020
• Est. Priority Date: 01/15/2016
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Inventors: Liang, Di, Huang, Xue
• Primary Examiner(s): Gumedzoe, Peniel M
• Application Number:
  US16/065,782
• Publication Number:
  US 20190019863A1
• Time in Patent Office: 1,516 Days
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/306 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/31
• CPC Class Codes: H01L 21/762 Dielectric regions , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 21/764 Air gaps H01L21/76264 takes precedence
• CPC Class Codes: H01L 27/07 the components having an active region in common
• CPC Class Codes: H01L 29/0649 Dielectric regions, e.g. SiO2 regions, air gaps
• CPC Class Codes: H01L 29/20 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78642 Vertical transistors
• CPC Class Codes: H01L 29/78681 having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te

Abstract

A multilayer device includes a substrate having a trench extending along a first surface of the substrate. A first layer disposed on the first surface of the substrate, the first layer comprising a given surface and another surface. A dielectric layer is formed between the given surface of the first layer and the first surface of the substrate. An active region disposed on the other surface of the first layer overlying the trench, wherein at least a portion of the active region resides substantially above a region defined by the trench.

Claims

1. A device, comprising:

a substrate having a trench extending between a first end and a second end of the trench along a first surface of the substrate;

a first semiconductor layer disposed on the first surface of the substrate and extending between the first end and the second end of the trench, the first semiconductor layer comprising a given surface and another surface;

a dielectric layer between the given surface of the first semiconductor layer and the first surface of the substrate, wherein at least one sidewall at the first and second ends of the trench is substantially perpendicular to the dielectric layer that is covering the trench; and

an active region disposed on the other surface of the first semiconductor layer overlying the trench, wherein at least a portion of the active region resides substantially above a region defined by the trench.

2. The device of claim 1, wherein another dielectric layer is formed on the first surface of the substrate.

3. The device of claim 1, wherein the dielectric layer comprises one of SiO₂, Si₃N₄, Al₂O₃.

4. The device of claim 1, wherein the substrate comprises a raised portion extending from a bottom surface of the trench toward the dielectric layer dividing the trench into two channels.

5. The device of claim 4, wherein the raised portion is separated from the dielectric layer by an air gap.

6. The device of claim 1, wherein the dielectric layer comprises a plurality of layers.

7. The device of claim 1, wherein a portion of the trench is contained in the substrate and another portion of the trench is contained in the dielectric layer.

8. The device of claim 1, wherein a width of the trench is defined by sidewalls extending from a surface within the substrate and terminate in an adjacent surface of the dielectric layer, such that the trench resides completely within the substrate bounded by the adjacent surface of the dielectric layer.

9. The device of claim 1, wherein both sidewalls at the first and second ends of the trench are substantially perpendicular to the dielectric layer that is covering the trench.

10. A circuit, comprising:

a plurality of multilayer devices formed on a substrate, the substrate having a trench extending along a first surface of the substrate, each device of the plurality of multilayer devices comprising;

a first layer disposed on the first surface of the substrate, the first layer comprising a given surface and another surface;

a dielectric layer between the given surface of the first layer and the first surface of the substrate, wherein the trench comprises a raised portion extending from a bottom of the trench toward the dielectric layer, dividing the trench into two sections; and

an active region disposed on the other surface of the first layer overlying the trench, wherein at least a portion of the active region resides substantially above a region defined by the trench.

11. The circuit of claim 10, wherein each multilayer device of the plurality of multilayer devices is bonded to the substrate by one of a hydrophobic bond, a hydrophilic bond, a polymer bond or a metal bond.

12. The circuit of claim 10, wherein the active region of each of the plurality of multilayer devices resides substantially within boundaries defined by sidewalls of the trench.

13. The circuit of claim 10, wherein each multilayer device of the plurality of multilayer devices comprises one of a laser, a photodetector, a modulator, and a passive waveguide.

14. The device of claim 10, wherein the trench is extending between a first end and a second end of the trench, and wherein at least one sidewall at the first and second ends of the trench is substantially perpendicular to the substrate.

15. The device of claim 10, wherein the trench is extending between a first end and a second end of the trench, and wherein at least one sidewall at the first and second ends of the trench is substantially perpendicular to the dielectric layer covering the trench.

16. The device of claim 10, wherein the first layer is a semiconductor layer.

17. A method of fabricating a multilayer device, comprising:

etching a substrate to form a straight trench extending between a first end and a second end of the trench along a first surface of the substrate;

bonding a structure to the substrate with a dielectric layer being formed between the structure and the substrate, wherein at least one sidewall at the first and second ends of the trench is substantially perpendicular to the dielectric layer that is covering the trench; and

forming an optically active region on the structure located in an overlying relationship with the trench such that at least a portion of the optically active region resides substantially above a region defined by the trench.

18. The method of claim 17, further comprising polishing a surface of one of the substrate and the structure prior to bonding.

19. The method of claim 17, wherein the dielectric layer is formed on at least one of the substrate and the structure.

20. The method of claim 17, wherein the multilayer device is one of a laser, a photodetector, a modulator, and a passive waveguide.