Transistor-based radio frequency (RF) switch

  • US 10,608,623 B2
  • Filed: 05/03/2019
  • Issued: 03/31/2020
  • Est. Priority Date: 12/21/2016
  • Status: Active Grant
  • ×
    • Pin Icon | RPX Insight
    • Pin
First Claim
Patent Images

1. A transistor-based radio frequency (RF) switch comprising:

  • an N number of main field-effect transistors (FETs) stacked in series between a first end node and a second end node such that a first terminal of a first main FET of the N number of main FETs is coupled to the first end node and a second terminal of an Nth main FET of the N number of main FETs is coupled to the second end node, wherein N is a finite integer greater than two;

    a plurality of gate resistors coupled in series between a proximal gate node and a distal gate node, wherein each gate resistor of the plurality of gate resistors is coupled between gates of an adjacent pair of the N number of main FETs;

    a first end-network coupled between the first end node and the proximal gate node, wherein the first end-network provides a first variable impedance that equalizes a drain-to-source voltage of the first main FET of the N number of main FETs to within ±

    5% of a drain-to-source voltage of a second main FET of the N number of main FETs; and

    a second end-network coupled between the second end node and the distal gate node, wherein the second end-network provides a second variable impedance to equalize the drain-to-source voltage of an Nth main FET of the N number of main FETs to within ±

    5% of the drain-to-source voltage of an N−

    1 main FET of the N number of main FETs.

View all claims
  • 1 Assignment
    ×
    ×

    Thank you for your feedback

    ×
    ×