Display device and electronic device including display device

• US 10,657,882 B2
• Filed: 09/13/2018
• Issued: 05/19/2020
• Est. Priority Date: 10/21/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun, Miyake, Hiroyuki
• Primary Examiner(s): Cerullo, Liliana
• Application Number:
  US16/130,447
• Publication Number:
  US 20190012960A1
• Time in Patent Office: 614 Days
• CPC Class Codes: G09G 2330/021 Power management, e.g. power saving
• CPC Class Codes: G09G 3/2003 Display of colours specific for liquid crystal displays G09G3/3607
• CPC Class Codes: G09G 3/3208 organic, e.g. using organic light-emitting diodes [OLED]
• CPC Class Codes: G09G 3/3233 with pixel circuitry controlling the current through the light-emitting element
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/78609 for preventing leakage current H01L29/78618 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals

Abstract

Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

Claims

1. A display device comprising:

a driving transistor comprising;

a first gate electrode;

a second gate electrode over the first gate electrode;

a first oxide semiconductor layer between the first gate electrode and the second gate electrode;

a first source electrode over and electrically connected to the first oxide semiconductor layer; and

a first drain electrode over and electrically connected to the first oxide semiconductor layer;

a switching transistor comprising;

a second oxide semiconductor layer;

a third gate electrode over the second oxide semiconductor layer;

a second source electrode over and electrically connected to the second oxide semiconductor layer; and

a second drain electrode over and electrically connected to the second oxide semiconductor layer; and

an organic EL element,

wherein the switching transistor does not comprise a gate electrode under the second oxide semiconductor layer,

wherein the organic EL element comprises a first electrode, a second electrode over the first electrode, and a layer comprising an organic compound between the first electrode and the second electrode,

wherein one of the second source electrode and the second drain electrode is electrically connected to a signal line,

wherein the other of the second source electrode and the second drain electrode is electrically connected to one of the first gate electrode and the second gate electrode of the driving transistor,

wherein one of the first source electrode and the first drain electrode is electrically connected to the organic EL element,

wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc,

wherein a length of the first gate electrode in a channel length direction is larger than a length of the second gate electrode in the channel length direction, and

wherein each of the first source electrode and the first drain electrode overlaps with the first gate electrode.

2. The display device according to claim 1, further comprising a color filter under the first electrode of the organic EL element.

3. The display device according to claim 1, wherein the organic EL element is configured to emit white light.

4. The display device according to claim 1, wherein a potential of the first gate electrode is different from a potential of the second gate electrode.

5. The display device according to claim 1, wherein an off-state current of the switching transistor per a channel width of 1 μ

m is less than or equal to 1×

10<sup>−

16</sup> A/μ

m.

6. The display device according to claim 1, wherein the first oxide semiconductor layer and the second oxide semiconductor layer each have a hydrogen concentration of less than or equal to 5×

10¹⁹ /cm³.

7. The display device according to claim 1, wherein each of a carrier concentration of the first oxide semiconductor layer and a carrier concentration of the second oxide semiconductor layer is less than 1×

10¹⁴ /cm³.

8. An electronic device comprising the display device according to claim 1, wherein the electronic device is any of a portable game machine, a digital camera, a television receiver, a computer, a mobile phone, and an e-book reader.

9. A display device comprising:

a driving transistor comprising;

a first gate electrode;

a second gate electrode over the first gate electrode;

a first oxide semiconductor layer between the first gate electrode and the second gate electrode;

a first source electrode over and electrically connected to the first oxide semiconductor layer; and

a first drain electrode over and electrically connected to the first oxide semiconductor layer;

a switching transistor comprising;

a second oxide semiconductor layer;

a third gate electrode over the second oxide semiconductor layer;

a second source electrode over and electrically connected to the second oxide semiconductor layer; and

a second drain electrode over and electrically connected to the second oxide semiconductor layer; and

an organic EL element,

wherein the switching transistor does not comprise a gate electrode under the second oxide semiconductor layer,

wherein the organic EL element comprises a first electrode, a second electrode over the first electrode, and a layer comprising an organic compound between the first electrode and the second electrode,

wherein one of the second source electrode and the second drain electrode is electrically connected to a signal line,

wherein the other of the second source electrode and the second drain electrode is electrically connected to one of the first gate electrode and the second gate electrode of the driving transistor,

wherein one of the first source electrode and the first drain electrode is electrically connected to the organic EL element,

wherein the organic EL element is provided over the driving transistor,

wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc,

wherein a length of the first gate electrode in a channel length direction is larger than a length of the second gate electrode in the channel length direction, and

wherein each of the first source electrode and the first drain electrode overlaps with the first gate electrode.

10. The display device according to claim 9, further comprising a color filter under the first electrode of the organic EL element.

11. The display device according to claim 9, wherein the organic EL element is configured to emit white light.

12. The display device according to claim 9, wherein a potential of the first gate electrode is different from a potential of the second gate electrode.

13. The display device according to claim 9, wherein an off-state current of the switching transistor per a channel width of 1 μ

m is less than or equal to 1×

10<sup>−

16</sup> A/μ

m.

14. The display device according to claim 9, wherein the first oxide semiconductor layer and the second oxide semiconductor layer each have a hydrogen concentration of less than or equal to 5×

10¹⁹ /cm³.

15. The display device according to claim 9, wherein each of a carrier concentration of the first oxide semiconductor layer and a carrier concentration of the second oxide semiconductor layer is less than 1×

10¹⁴ /cm³.

16. An electronic device comprising the display device according to claim 9, wherein the electronic device is any of a portable game machine, a digital camera, a television receiver, a computer, a mobile phone, and an e-book reader.

17. A display device comprising:

a driving transistor comprising;

a first gate electrode;

a second gate electrode over the first gate electrode;

a first oxide semiconductor layer between the first gate electrode and the second gate electrode; and

a first electrode over and electrically connected to the first oxide semiconductor layer;

a switching transistor comprising;

a second oxide semiconductor layer; and

a third gate electrode over the second oxide semiconductor layer;

an organic EL element,

wherein the switching transistor does not comprise a gate electrode under the second oxide semiconductor layer,

wherein the organic EL element comprises a second electrode, a third electrode over the second electrode, and a layer comprising an organic compound between the second electrode and the third electrode,

wherein the switching transistor is electrically connected to a signal line,

wherein one of a source and a drain of the switching transistor is electrically connected to one of the first gate electrode and the second gate electrode of the driving transistor,

wherein one of a source and a drain of the driving transistor is electrically connected to the organic EL element,

wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc,

wherein a length of the first gate electrode in a channel length direction is larger than a length of the second gate electrode in the channel length direction, and

wherein the first electrode overlaps with the first gate electrode.

18. The display device according to claim 17, further comprising a color filter under the first electrode of the organic EL element.

19. The display device according to claim 17, wherein the organic EL element is configured to emit white light.

20. The display device according to claim 17, wherein a potential of the first gate electrode is different from a potential of the second gate electrode.

21. The display device according to claim 17, wherein an off-state current of the switching transistor per a channel width of 1 μ

m is less than or equal to 1×

10<sup>−

16</sup> A/μ

m.

22. The display device according to claim 17, wherein the first oxide semiconductor layer and the second oxide semiconductor layer each have a hydrogen concentration of less than or equal to 5×

10¹⁹ /cm³.

23. The display device according to claim 17, wherein each of a carrier concentration of the first oxide semiconductor layer and a carrier concentration of the second oxide semiconductor layer is less than 1×

10¹⁴ /cm³.

24. An electronic device comprising the display device according to claim 17, wherein the electronic device is any of a portable game machine, a digital camera, a television receiver, a computer, a mobile phone, and an e-book reader.

25. A display device comprising:

a driving transistor comprising;

a first gate electrode;

a second gate electrode over the first gate electrode;

a first oxide semiconductor layer between the first gate electrode and the second gate electrode; and

a first electrode over and electrically connected to the first oxide semiconductor layer;

a switching transistor comprising;

a second oxide semiconductor layer; and

a third gate electrode over the second oxide semiconductor layer; and

an organic EL element,

wherein the switching transistor does not comprise a gate electrode under the second oxide semiconductor layer,

wherein the organic EL element comprises a second electrode, a third electrode over the second electrode, and a layer comprising an organic compound between the second electrode and the third electrode,

wherein the switching transistor is electrically connected to a signal line,

wherein one of a source and a drain of the switching transistor is electrically connected to one of the first gate electrode and the second gate electrode of the driving transistor,

wherein one of a source and a drain of the driving transistor is electrically connected to the organic EL element,

wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc,

wherein a length of the first gate electrode in a channel length direction is larger than a length of the second gate electrode in the channel length direction,

wherein the first electrode overlaps with the first gate electrode,

wherein the second electrode is directly connected to the first electrode, and

wherein the first electrode and the second gate electrode comprise the same material.

26. The display device according to claim 25, further comprising a color filter under the first electrode of the organic EL element.

27. The display device according to claim 25, wherein the organic EL element is configured to emit white light.

28. The display device according to claim 25, wherein a potential of the first gate electrode is different from a potential of the second gate electrode.

29. The display device according to claim 25, wherein an off-state current of the switching transistor per a channel width of 1pm is less than or equal to 1×

10<sup>−

16</sup> A/μ

m.

30. The display device according to claim 25, wherein the first oxide semiconductor layer and the second oxide semiconductor layer each have a hydrogen concentration of less than or equal to 5×

10¹⁹/cm³.

31. The display device according to claim 25, wherein each of a carrier concentration of the first oxide semiconductor layer and a carrier concentration of the second oxide semiconductor layer is less than 1×

10¹⁴/cm³.

32. An electronic device comprising the display device according to claim 25, wherein the electronic device is any of a portable game machine, a digital camera, a television receiver, a computer, a mobile phone, and an e-book reader.