Electroluminescent device and manufacturing method thereof

• US 10,673,010 B2
• Filed: 05/23/2017
• Issued: 06/02/2020
• Est. Priority Date: 07/01/2016
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd., Hefei Xinsheng Optoelectric Technology Co. Ltd. (BOE Technology Group Co., Ltd.)
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Li, Jiewei
• Primary Examiner(s): Nicely, Joseph C.
• Assistant Examiner(s): Koo, Lamont B
• Application Number:
  US15/574,740
• Publication Number:
  US 20180233693A1
• Time in Patent Office: 1,106 Days
• Field of Search: None
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/00 Organic light-emitting devices integrated devices or assemblies of multiple devices H10K59/00, H10K65/00; organic semiconductor lasers H01S5/36
• CPC Class Codes: H10K 50/171 Electron injection layers
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 50/822 characterised by their shape
• CPC Class Codes: H10K 50/824 combined with auxiliary electrodes
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

An electroluminescent device and a manufacturing method thereof are disclosed. The electroluminescent device includes a cathode layer and further includes an auxiliary cathode layer located on the cathode layer; a material of the auxiliary cathode layer (03) is at least one transparent metal.

Claims

1. A manufacturing method of an electroluminescent device, comprising:

forming a cathode layer; and

forming an auxiliary cathode layer on the cathode layer, a material of the auxiliary cathode layer being at least one transparent metal,

wherein before forming the cathode layer, the manufacturing method further comprises;

determining a preset light transmittance of the cathode layer and a preset light transmittance of the auxiliary cathode layer, according to a target overall light transmittance of the cathode layer and the auxiliary cathode layer as required;

respectively determining a preset thickness of the cathode layer and a preset thickness of the auxiliary cathode layer, according to a predetermined fitting relation between a thickness and a light transmittance of the cathode layer under different co-evaporation ratios, a predetermined fitting relation between a thickness and a light transmittance of the auxiliary cathode layer, as well as the preset light transmittance of the cathode layer and the preset light transmittance of the auxiliary cathode layer as obtained;

forming the cathode layer on a substrate according to the preset thickness of the cathode layer;

forming the auxiliary cathode layer on the substrate having the cathode layer formed thereon according to the preset thickness of the auxiliary cathode layer;

measuring an actual overall light transmittance of the cathode layer and the auxiliary cathode layer;

comparing the actual overall light transmittance of the cathode layer and the auxiliary cathode layer with the target overall light transmittance to calculate a light transmittance tolerance; and

determining whether the light transmittance tolerance is within a preset range;

if the light transmittance tolerance is within the preset range, determining that the preset thickness of the cathode layer and the preset thickness of the auxiliary cathode layer have been calibrated correctly; and

if the light transmittance tolerance is beyond the preset range, adjusting the preset thickness of the auxiliary cathode layer according to a difference between the actual overall light transmittance and the target overall light transmittance of the cathode layer and the auxiliary cathode layer, as well as the fitting relation between the thickness and the light transmittance of the auxiliary cathode layer.

2. The manufacturing method according to claim 1, wherein the forming the cathode layer comprises:

forming the cathode layer on the substrate at a corresponding co-evaporation ratio, according to the thickness of the cathode layer having been correctly calibrated.

3. The manufacturing method according to claim 2, wherein the forming the auxiliary cathode layer on the cathode layer comprises:

forming the auxiliary cathode layer on the substrate having the cathode layer formed thereon, according to the thickness of the auxiliary cathode layer having been correctly calibrated.

4. The manufacturing method according to claim 1, wherein

the determining the fitting relation between the thickness and the light transmittance of the auxiliary cathode layer comprises:

evaporating auxiliary cathode layers having different thicknesses and measuring light transmittances for each of the auxiliary cathode layers, and fitting each of the thicknesses with a respective light transmittance as measured, so as to obtain the fitting relation; and

the determining the fitting relation between the thickness and the light transmittance of the cathode layer under different co-evaporation ratios comprises;

given a same co-evaporation ratio, evaporating cathode layers having different thicknesses and measuring light transmittances for each of the cathode layers, and fitting each of the thicknesses with a respective light transmittance as measured, so as to obtain the fitting relation, wherein

the thickness of the cathode layer as evaporated is within a preset thickness range.

5. The manufacturing method according to claim 1, wherein the cathode layer is a co-evaporated film layer having at least one transparent metal.

6. An electroluminescent device, comprising:

a base substrate;

a cathode layer, located on the base substrate and configured to be a co-evaporated film layer, the co-evaporated film layer has a single-layer structure without an electrode injection layer; and

an auxiliary cathode layer, located on a side of the cathode layer away from the base substrate and configured to enclose the cathode layer, a material of the auxiliary cathode layer being at least one transparent metal,

wherein the co-evaporated film layer comprises at least one transparent metal same as the at least one transparent metal in the auxiliary cathode layer, and the co-evaporated film layer further comprises a metal which has a work function lower than that of the at least one transparent metal,

wherein the at least one transparent metal in the co-evaporated film layer is transparent metal Ag or transparent metal Al, the metal having a work function lower than that of the at least one transparent metal in the co-evaporated film layer is metal Mg,

wherein a co-evaporation ratio of a particle concentration of Mg to a concentration of Ag in the co-evaporated film layer is ranged from 1;

1 to 20;

1,

a thickness of the co-evaporated film layer is ranged from 50 Å

to 150 Å

,

a thickness of the auxillary cathode layer is ranged from 200 Å

to 500, and

an overall light transmittance of the co-evaporated film layer and the auxillary cathode layer is ranged from 30% to 50%.