Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates

• US 10,676,836 B2
• Filed: 08/30/2018
• Issued: 06/09/2020
• Est. Priority Date: 06/27/2003
• Status: Expired due to Term

• Current Assignee: Microfabrica Incorporated (Technoprobe S.P.A.)
• Original Assignee: Microfabrica Incorporated (Technoprobe S.P.A.)
• Inventors: Cohen, Adam L., Lockard, Michael S., Kim, Kieun, Le, Qui T., Zhang, Gang, Frodis, Uri, McPherson, Dale S., Smalley, Dennis R.
• Primary Examiner(s): Rufo, Louis J
• Application Number:
  US16/118,267
• Publication Number:
  US 20190017189A1
• Time in Patent Office: 649 Days
• CPC Class Codes: B81C 1/00126 Static structures not provided for in groups B81C1/00031 - B81C1/00119
• CPC Class Codes: B81C 2201/0109 Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: C23C 18/1605 by masking
• CPC Class Codes: C23C 18/1651 Two or more layers only obtained by electroless plating
• CPC Class Codes: C25D 1/003 3D structures, e.g. superposed patterned layers
• CPC Class Codes: C25D 5/022 using masking means
• CPC Class Codes: Y10T 156/11 Methods of delaminating, per se; i.e. , separating at bonding face
• CPC Class Codes: Y10T 156/19 Delaminating means

Abstract

Some embodiments are directed to techniques for building single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while others use an intervening adhesion layer material. Some embodiments use different seed layer and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while others apply the materials in blanket fashion. Some embodiments remove extraneous material via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

Claims

1. A batch process for forming a plurality of multilayer three-dimensional structures, comprising:

(a) forming on and adhering a first layer of material at least indirectly to a substrate containing at least one region of dielectric material, wherein the first layer of material comprises at least one first structural material and at least one first sacrificial material that are planarized to set a boundary level for the first layer of material;

(b) forming and adhering at least one additional layer of material on and at least indirectly to a previously formed layer of material, to build up the plurality of three-dimensional structures from a plurality of adhered layers, wherein each of the at least one additional layer comprises at least one additional structural material and at least one additional sacrificial material that are planarized to set a boundary level for each, respective, additional layer of material; and

(c) after formation of the plurality of layers removing the at least one sacrificial material from multiple layers to reveal the plurality of three-dimensional structures, wherein the at least one sacrificial material is selected from the group consisting of the at least one first sacrificial material and the at least one additional sacrificial material;

wherein the formation of the first layer of material additionally comprises;

(i) depositing a (m)th seed layer material to form a non-planar coating of which a portion is located at least indirectly on the substrate that is to receive a deposit of an (m)th material selected from the group consisting of at least one of the at least one first structural material and at least one of the at least one first sacrificial material;

(ii) removing, via planarization, the (m)th seed layer material from an elevated portion of the non-planar coating and any overlaying (m)th material after deposition of the (m)th material and prior to beginning forming of any subsequent layer,

wherein at least one material, selected from the group consisting of the at least one first structural material, the at least one additional structural material, the at least one first sacrificial material, and the at least one additional sacrificial is electrodeposited.

2. The batch process of claim 1 wherein the at least one additional structural material is a single structural material and the at least one first structural material is the same single structural material.

3. The batch process of claim 1 wherein the at least one additional sacrificial material is a single sacrificial material and the at least one first sacrificial material is the same single sacrificial material.

4. The batch process of claim 1 wherein the adhering at least indirectly to the substrate comprises at least one intermediate material being located between at least a portion of the first layer of material and the substrate, wherein the at least one intermediate material comprises a material selected from the group consisting of:

(1) a seed layer material located between at least a portion of the at least one first structural material and the substrate;

(2) a seed layer material located between at least a portion of the at least one first sacrificial material and the substrate;

(3) an adhesion layer material and a seed layer material located between at least a portion of the at least one first structural material and the substrate;

(4) an adhesion layer material and a seed layer material located between at least a portion of the at least one first sacrificial material and the substrate; and

(5) a sacrificial material that is removed to separate the plurality of structures from the substrate.

5. The batch process of claim 1 wherein the adhering at least indirectly to a previously formed layer of material comprises at least one intermediate material being located between at least a portion of a respective previous layer of material and a respective additional layer of material, wherein the at least one intermediate material comprises a material selected from the group consisting of:

(1) a seed layer material located between at least a portion of the at least one additional structural material and the previously formed layer of material;

(2) a seed layer material located between at least a portion of the at least one additional sacrificial material and the previously formed layer of material;

(3) an adhesion layer material and a seed layer material located between at least a portion of the at least one additional structural material and the previously formed layer of material;

(4) an adhesion layer material and a seed layer material located between at least a portion of the at least one additional sacrificial material and the previously formed layer of material.

6. The batch process of claim 1 wherein the (m)th material is selected from the group consisting of (1) a first structural material deposited to form a portion of the first layer;

(2) a second structural material deposited to form a portion of the first layer;

(3) a first sacrificial material deposited to form a portion of the first layer; and

(4) a second sacrificial material deposited to form a portion of the first layer.

7. A batch process for forming a plurality of multilayer three-dimensional structures, comprising:

(a) forming on and adhering a first layer of material at least indirectly to a substrate, wherein the first layer comprises at least one first sacrificial material and at least one first structural material that are planarized to set a boundary level for the first layer;

(b) forming and adhering at least one (n)th layer of material to a previously formed (n−

1)th layer of material to build up the plurality of three-dimensional structures from a plurality of adhered layers wherein the at least one (n)th layer of material comprises at least one (n)th sacrificial material and at least one (n)th structural material that are planarized to set a boundary level for each, respective, (n)th layer of material; and

(c) after formation of the plurality of layers removing at least one sacrificial material from multiple layers to reveal the plurality of three-dimensional structures, wherein the at least one sacrificial material is selected from the group consisting of the at least one first sacrificial material and the at least one (n)th sacrificial material;

wherein the formation of the (n)th layer of material further comprises;

(i) depositing a (m)th seed layer material to form a non-planar coating of which a portion is located at least indirectly on a region of an (n−

1)th layer that is to receive a deposition of an (m)th material of the (n)th layer selected from the group consisting of at least one of the at least one (n)th sacrificial material and at least one of the at least one (n)th structural material;

(ii) removing, via planarization, the (m)th seed layer material from an elevated portion of the non-planar coating and any overlaying (m)th material after deposition of the (m)th material of the (n)th layer and prior to beginning forming of any subsequent layer that,

wherein at least one material, selected from the group consisting of the at least one first structural material and the at least one (n)th sacrificial material is electrodeposited.

8. The process of claim 7 wherein the (n)th layer is the second layer and the (n−

1)th layer is the first layer.

9. The batch process of claim 7 wherein the at least one (n)th structural material is a single structural material and the at least one first structural material is the same single structural material.

10. The batch process of claim 7 wherein the at least one (n)th sacrificial material is a single sacrificial material and the at least one first sacrificial material is the same single sacrificial material.

11. The batch process of claim 7 wherein the adhering at least indirectly to the substrate comprises at least one intermediate material being located between at least a portion of the first layer of material and the substrate, wherein the at least one intermediate material comprises a material selected from the group consisting of:

(1) a seed layer material located between at least a portion of the at least one first structural material and the substrate;

(2) a seed layer material located between at least a portion of the at least one first sacrificial material and the substrate;

(3) an adhesion layer material and a seed layer material located between at least a portion of the at least one first structural material and the substrate;

(4) an adhesion layer material and a seed layer material located between at least a portion of the at least one first sacrificial material and the substrate; and

(5) a sacrificial material that is removed to separate the plurality of structures from the substrate.

12. The batch process of claim 7 wherein the adhering at least indirectly to a previously formed layer of material comprises at least one intermediate material being located between at least a portion of a respective previous layer of material and a respective additional layer of material, wherein the at least one intermediate material comprises a material selected from the group consisting of:

(1) a seed layer material located between at least a portion of at least one at least one (n)th structural material and the (n−

1)th layer of material;

(2) a seed layer material located between at least a portion of at least one of the at least one (n)th sacrificial material and the (n−

1)th layer of material;

(3) an adhesion layer material and a seed layer material located between at least a portion of at least one of the at least one (n)th structural material and the (n−

1)th layer of material; and

(4) an adhesion layer material and a seed layer material located between at least a portion of at least one of the at least one (n)th sacrificial material and the (n−

1)th layer of material.

13. A batch process for forming a plurality of multilayer three-dimensional structures on a substrate, comprising:

(a) forming on and adhering a first layer of material at least indirectly to a substrate containing at least one region of dielectric material, wherein the first layer of material comprises at least one first structural material and at least one first sacrificial material that are planarized to set a boundary level for the first layer; and

(b) forming and adhering at least one additional layer of material to a previously formed layer of material to build up the plurality of three-dimensional structures from a plurality of adhered layers wherein the at least one additional layer of material comprises at least one additional structural material and at least one additional sacrificial material that are planarized to set a boundary level for each, respective, additional layer of material;

(c) after formation of the plurality of layers removing at least one structure material from multiple layers to reveal the plurality of three-dimensional structures wherein the at least one sacrificial material is selected from the group consisting of the at least one first sacrificial material and the at least one additional sacrificial material;

wherein the formation of the first layer of material comprises;

(i) depositing an (m)th seed layer material at least indirectly onto the substrate including onto at least some portions that are to receive a deposit of an (m)th material, wherein the (m)th material is selected from the group consisting of at least one of the at least one first structural material and at least one of the at least one first sacrificial material;

(ii) depositing the (m)th material onto the (m)th seed layer material;

(iii) after depositing the (m)th material, depositing at (m+1)th seed layer material onto those portions of the substrate that are to receive an (m+1)th material wherein the (m+1)th material is selected from the group consisting of at least one of the at least one first structural material and at least one of the at least one first sacrificial material, wherein the (m)th seed layer and the (m+1)th seed layer comprises different seed layer materials and wherein the (m)th material and (m+1)th material comprises different materials;

(iv) depositing the (m+1)th material onto the (m+1)th seed layer material over those portions of the substrate that are to receive the (m+1)th material; and

(v) planarizing the deposited (m)th material and the deposited (m+1)th material to a height corresponding to a desired boundary level for the first layer,

wherein at least one material, selected from the group consisting of the at least one first structural material, the at least one additional structural material, the at least one first sacrificial material and the at least one additional sacrificial material is electrodeposited.

14. The batch process of claim 13 wherein the (m)th material is selected from the group consisting of (1) a first structural material being deposited to form a portion of the (n)th layer;

(2) a second structural material being deposited to form a portion of the (n)th layer;

(3) a first sacrificial material being deposited to form a portion of the (n)th layer; and

(4) a second sacrificial material being deposited to form a portion of the (n)th layer.

15. The batch process of claim 13 wherein the at least one additional structural material is a single structural material and the at least one first structural material is the same single structural material.

16. The batch process of claim 13 wherein the at least one additional sacrificial material is a single sacrificial material and the at least one first sacrificial material is the same single sacrificial material.

17. The batch process of claim 13 wherein the adhering at least indirectly to the substrate comprises at least one intermediate material being located between at least a portion of the first layer of material and the substrate, wherein the at least one intermediate material comprises a material selected from the group consisting of:

(1) a seed layer material located between at least a portion of the at least one first structural material and the substrate;

(2) a seed layer material located between at least a portion of the at least one first sacrificial material and the substrate;

(3) an adhesion layer material and a seed layer material located between at least a portion of the at least one first structural material and the substrate;

(4) an adhesion layer material and a seed layer material located between at least a portion of the at least one first sacrificial material and the substrate; and

(5) a sacrificial material that is removed to separate the plurality of structures from the substrate.

18. The batch process of claim 13 wherein the adhering at least indirectly to a previously formed layer of material comprises at least one intermediate material being located between at least a portion of a respective previous layer of material and a respective additional layer of material, wherein the at least one intermediate material comprises a material selected from the group consisting of:

(1) a seed layer material located between at least a portion of the at least one additional structural material and the previously formed layer of material;

(2) a seed layer material located between at least a portion of the at least one additional sacrificial material and the previously formed layer of material;

(3) an adhesion layer material and a seed layer material located between at least a portion of the at least one additional structural material and the previously formed layer of material;

(4) an adhesion layer material and a seed layer material located between at least a portion of the at least one additional sacrificial material and the previously formed layer of material.

19. The batch process of claim 13 wherein the (m)th material is selected from the group consisting of (1) a first structural material deposited to form a portion of the first layer;

(2) a second structural material deposited to form a portion of the first layer;

(3) a first sacrificial material deposited to form a portion of the first layer; and

(4) a second sacrificial material deposited to form a portion of the first layer.

20. A batch process for forming a plurality of multilayer three-dimensional structures on a substrate, comprising:

(a) forming on and adhering a first layer of material at least indirectly to a substrate wherein the first layer of material comprises at least one first structural material and at least one first sacrificial material that are planarized to set a boundary level for the first layer of material; and

(b) forming and adhering at least one (n)th layer of material to a previously formed (n−

1)th layer of material to build up the plurality of three-dimensional structures from a plurality of adhered layers of material wherein the at least one (n)th layer of material comprises at least one (n)th structural material and at least one (n)th sacrificial material that are planarized to set a boundary level for each, respective, (n)th layer of material;

(c) after formation of the plurality of layers removing at least one sacrificial material from multiple layers to reveal the plurality of three-dimensional structures, wherein the at least one sacrificial material is selected from the group consisting of at least one of the at least one first sacrificial material and at least one of the at least one (n)th sacrificial material;

wherein the formation of the (n)th layer of material further comprises;

(i) depositing an (m)th seed layer material at least indirectly onto the (n−

1)th layer of material including onto at least some portions that are to receive a deposit of an (m)th material, wherein the (m)th material is selected from the group consisting of at least one of the at least one (n)th structural material and at least one of the at least one (n)th sacrificial material;

(ii) depositing the (m)th material onto the first seed layer material;

(iii) after depositing the (m)th material, depositing an (m+1)th seed layer material onto those portions of the substrate that are to receive a (m+1)th material wherein the (m+1)th material is selected from the group consisting of at least one of the at least one (n)th structural material and at least one of the at least one (n)th sacrificial material, wherein the (m)th seed layer and the (m+1)th seed layer comprise different seed layer materials and wherein the (m)th material and the (m+1)th material comprise different materials;

(v) depositing the (m+1)th material onto the (m+1)th seed layer material over those portions of the (n−

1)th layer that are to receive the (m+1)th material; and

(vi) planarizing the deposited (m)th material and the deposited (m+1)th material to a height corresponding to a desired boundary level for the (n)th layer of material,

wherein at least one material, selected from the group consisting of the at least one first structural material, the at least one (n)th structural material, the at least one first sacrificial material, and the at least one (n)th sacrificial material is electrode posited.

21. The process of claim 20 wherein the (n)th layer is the second layer and the (n−

1)th layer is the first layer.

22. The process of claim 20 wherein the (m)th material is a first material for the (n)th layer of material and the (m+1)th material is a second material for the (n)th layer.

23. The batch process of claim 20 wherein the at least one (n)th structural material is a single structural material and the at least one first structural material is the same single structural material.

24. The batch process of claim 20 wherein the at least one (n)th sacrificial material is a single sacrificial material and the at least one first sacrificial material is the same single sacrificial material.

25. The batch process of claim 20 wherein the adhering at least indirectly to the substrate comprises at least one intermediate material being located between at least a portion of the first layer of material and the substrate, wherein the at least one intermediate material comprises a material selected from the group consisting of:

(1) a seed layer material located between at least a portion of the at least one first structural material and the substrate;

(2) a seed layer material located between at least a portion of the at least one first sacrificial material and the substrate;

(3) an adhesion layer material and a seed layer material located between at least a portion of the at least one first structural material and the substrate;

(4) an adhesion layer material and a seed layer material located between at least a portion of the at least one first sacrificial material and the substrate; and

(5) a sacrificial material that is removed to separate the plurality of structures from the substrate.

26. The batch process of claim 20 wherein the adhering at least indirectly to a previously formed layer of material comprises at least one intermediate material being located between at least a portion of a respective previous layer of material and a respective additional layer of material, wherein the at least one intermediate material comprises a material selected from the group consisting of:

(1) a seed layer material located between at least a portion of at least one at least one (n)th structural material and the (n−

1)th layer of material;

(2) a seed layer material located between at least a portion of at least one of the at least one (n)th sacrificial material and the (n−

1)th layer of material;

(3) an adhesion layer material and a seed layer material located between at least a portion of at least one of the at least one (n)th structural material and the (n−

1)th layer of material; and

(4) an adhesion layer material and a seed layer material located between at least a portion of at least one of the at least one (n)th sacrificial material and the (n−

1)th layer of material.

27. The batch process of claim 20 wherein the (m)th material is selected from the group consisting of (1) a first structural material being deposited to form a portion of the (n)th layer;

(2) a second structural material being deposited to form a portion of the (n)th layer;

(3) a first sacrificial material being deposited to form a portion of the (n)th layer; and

(4) a second sacrificial material being deposited to form a portion of the (n)th layer.