Devices and methods of forming low resistivity noble metal interconnect

  • US 10,679,937 B2
  • Filed: 10/17/2017
  • Issued: 06/09/2020
  • Est. Priority Date: 05/31/2016
  • Status: Active Grant
First Claim
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1. A structure comprising:

  • a dielectric matrix;

    a first via extending completely through the dielectric matrix;

    a second via extending completely through the dielectric matrix;

    a trench extending partially through the dielectric matrix, the trench arranged laterally between the first via and the second via;

    a first interconnect in the first via;

    a second interconnect in the second via;

    a third interconnect in the trench;

    a barrier layer including a first portion and a second portion lining each of the first via, the second via, and the trench,a first air-gap arranged laterally between the trench and the first via; and

    a second air-gap arranged laterally between the trench and the second via,wherein the first portion of the barrier layer is an oxide, the second portion of the barrier layer is a metal, the first air-gap and the second air-gap are fully surrounded by respective portions of dielectric material, and the first interconnect, the second interconnect, and the third interconnect each comprise a noble metal.

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