Light emitting device

  • US 10,680,049 B2
  • Filed: 03/20/2019
  • Issued: 06/09/2020
  • Est. Priority Date: 11/09/2001
  • Status: Active Grant
First Claim
Patent Images

1. A light emitting device comprising:

  • a semiconductor film including a channel formation region, a source region, and a drain region;

    a first insulating film over the semiconductor film;

    a gate electrode over the first insulating film;

    a second insulating film over the gate electrode;

    a power supply line over the second insulating film, the power supply line being electrically connected to one of the source region and the drain region;

    a source wiring over the second insulating film, the source wiring including a region overlapping with the semiconductor film; and

    a light-emitting element electrically connected to the other of the source region and the drain region,wherein a capacitance is formed in a region overlapping with the channel formation region by arranging the gate electrode, the second insulating film, and the power supply line in this order,wherein an end portion of the channel formation region includes a first point and a second point which overlap with the gate electrode, andwherein a length connecting the first point and the second point along a channel path is longer than a length connecting the first point and the second point by a straight line.

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