Light emitting device

• US 10,680,049 B2
• Filed: 03/20/2019
• Issued: 06/09/2020
• Est. Priority Date: 11/09/2001
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Udagawa, Makoto, Hayakawa, Masahiko, Koyama, Jun, Osame, Mitsuaki, Anzai, Aya
• Primary Examiner(s): Ha, Nathan W
• Application Number:
  US16/358,904
• Publication Number:
  US 20190221628A1
• Time in Patent Office: 447 Days
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals

Abstract

The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

Claims

1. A light emitting device comprising:

a semiconductor film including a channel formation region, a source region, and a drain region;

a first insulating film over the semiconductor film;

a gate electrode over the first insulating film;

a second insulating film over the gate electrode;

a power supply line over the second insulating film, the power supply line being electrically connected to one of the source region and the drain region;

a source wiring over the second insulating film, the source wiring including a region overlapping with the semiconductor film; and

a light-emitting element electrically connected to the other of the source region and the drain region,

wherein a capacitance is formed in a region overlapping with the channel formation region by arranging the gate electrode, the second insulating film, and the power supply line in this order,

wherein an end portion of the channel formation region includes a first point and a second point which overlap with the gate electrode, and

wherein a length connecting the first point and the second point along a channel path is longer than a length connecting the first point and the second point by a straight line.

2. The light emitting device comprising according to claim 1, wherein the channel formation region comprises a rectangular shape.

3. The light emitting device comprising according to claim 1, wherein the channel formation region comprises a serpentine shape.

4. A light emitting device comprising:

a semiconductor film including a channel formation region, a source region, and a drain region;

a first insulating film over the semiconductor film;

a gate electrode over the first insulating film;

a second insulating film over the gate electrode;

a power supply line over the second insulating film, the power supply line being electrically connected to one of the source region and the drain region;

a source wiring over the second insulating film, the source wiring including a region overlapping with the semiconductor film; and

a light-emitting element electrically connected to the other of the source region and the drain region,

wherein a capacitance is formed in a region overlapping with the channel formation region by arranging the gate electrode, the second insulating film, and the power supply line in this order, and

wherein the channel formation region comprises at least one of corner portions in a region overlapping with the gate electrode.

5. The light emitting device comprising according to claim 4, wherein the channel formation region comprises a rectangular shape.

6. The light emitting device comprising according to claim 4, wherein the channel formation region comprises a serpentine shape.