Counter electrode for electrochromic devices

• US 10,684,523 B2
• Filed: 11/29/2018
• Issued: 06/16/2020
• Est. Priority Date: 09/05/2014
• Status: Active Grant

• Current Assignee: View Incorporated
• Original Assignee: View Incorporated
• Inventors: Gillaspie, Dane, Pradhan, Anshu A., Kailasam, Sridhar K.
• Primary Examiner(s): Pinkney, Dawayne
• Application Number:
  US16/204,540
• Publication Number:
  US 20190107763A1
• Time in Patent Office: 565 Days
• Field of Search: 359296, 359253-254, 359245-247, 359290-291, 359298, 359265-275, 359277, 359242, 349 33, 345 49, 345105, 345107, 430 31- 32
• CPC Class Codes: C23C 14/34 Sputtering
• CPC Class Codes: G02F 1/1523 comprising inorganic material
• CPC Class Codes: G02F 1/1524 Transition metal compounds
• CPC Class Codes: G02F 1/153 Constructional details
• CPC Class Codes: G02F 1/155 Electrodes
• CPC Class Codes: G02F 2001/1536 additional, e.g. protective, layer inside the cell
• CPC Class Codes: G02F 2001/1555 Counter electrode
• CPC Class Codes: G02F 2202/06 dopant

Abstract

The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel-tungsten-tin-oxide (NiWSnO). This material is particularly beneficial in that it is very transparent in its clear state.

Claims

1. A method of fabricating an electrochromic device, the method comprising:

(a) forming either an electrochromic layer comprising tungsten oxide or a counter electrode layer comprising nickel-tungsten-tin-oxide (NiWSnO),

wherein the electrochromic layer or the counter electrode layer formed in (a) includes an oxygen-rich portion comprising an oxygen-rich tungsten oxide or an oxygen-rich NiWSnO, respectively;

(b) forming the other of the electrochromic layer comprising the tungsten oxide and the counter electrode layer comprising the NiWSnO directly on the electrochromic layer or the counter electrode layer formed in (a), without first providing an ion conducting electronically insulating layer between the electrochromic layer and the counter electrode layer; and

(c) converting at least a portion of the oxygen-rich tungsten oxide or the oxygen-rich NiWSnO to a material that is substantially ion conducting and substantially electronically insulating.

2. The method of claim 1, wherein the electrochromic layer is deposited in (a) and comprises the oxygen-rich tungsten oxide, and wherein the counter electrode layer is deposited in (b) directly in contact with the oxygen-rich tungsten oxide.

3. The method of claim 2, wherein (c) comprises converting at least a portion of oxygen-rich tungsten oxide to the material that is substantially ion conducting and substantially electronically insulating.

4. The method of claim 1, wherein the counter electrode layer is deposited in (a) and comprises the oxygen-rich NiWSnO, and wherein the electrochromic layer is deposited in (b) directly in contact with the oxygen-rich NiWSnO.

5. The method of claim 4, wherein (c) comprises converting at least a portion of the oxygen-rich NiWSnO to the material that is substantially ion conducting and substantially electronically insulating.

6. The method of claim 1, wherein the oxygen-rich portion of the electrochromic layer or the counter electrode layer formed in (a) is provided as a distinct oxygen-rich sub-layer within the electrochromic layer or the counter electrode layer formed in (a).

7. The method of claim 1, wherein the oxygen-rich portion of the electrochromic layer or the counter electrode layer formed in (a) is provided within a graded layer.

8. The method of claim 7, wherein the graded layer comprises an oxygen concentration gradient in a direction normal to a surface of the electrochromic layer and the counter electrode layer.

9. The method of claim 1, wherein the electrochromic layer is doped with one or more of molybdenum, titanium, and vanadium.

10. An integrated deposition system for fabricating an electrochromic stack, the integrated deposition system comprising:

a plurality of deposition stations aligned in series and interconnected and operable to pass a substrate from one station to the next without exposing the substrate to an external environment,

wherein the plurality of deposition stations comprise

(i) a first deposition station containing a first one or more material sources for depositing a cathodically coloring layer;

(ii) a second deposition station containing a second one or more material sources for depositing an anodically coloring layer comprising nickel-tungsten-tin-oxide (NiWSnO); and

a controller comprising program instructions for passing the substrate through the plurality of deposition stations in a manner that deposits on the substrate (i) the cathodically coloring layer, and (ii) the anodically coloring layer in direct contact with each other.

11. The integrated deposition system of claim 10, wherein the NiWSnO comprises an atomic ratio of Ni:

(W+Sn) that is between about 1;

1 and 4;

1.

12. The integrated deposition system of claim 11, wherein the NiWSnO comprises an atomic ratio of Ni:

(W+Sn) that is between about 1;

1 and 3;

1.

13. The integrated deposition system of claim 12, wherein the NiWSnO comprises an atomic ratio of Ni:

(W+Sn) that is between about 1.5;

1 and 2.5;

1.

14. The integrated deposition system of claim 13, wherein the NiWSnO comprises an atomic ratio of Ni:

(W+Sn) that is between about 2;

1 and 2.5;

1.

15. The integrated deposition system of claim 10, wherein the NiWSnO comprises an atomic ratio of W:

Sn that is between about 1;

1 and 3;

1.

16. The integrated deposition system of claim 15, wherein the NiWSnO comprises an atomic ratio of W:

Sn that is between about 1.5;

1 and 2.5;

1.

17. The integrated deposition system of claim 16, wherein the NiWSnO comprises an atomic ratio of W:

Sn that is between about 1.5;

1 and 2;

1.

18. The integrated deposition system of claim 10, wherein at least one of the second one or more material sources for depositing the anodically coloring layer comprise an elemental metal selected from the group consisting of:

nickel, tungsten, and tin.

19. The integrated deposition system of claim 10, wherein at least one of the second one or more material sources for depositing the anodically coloring layer comprise an alloy comprising two or more metals selected from the group consisting of:

nickel, tungsten, and tin.

20. The integrated deposition system of claim 10, further comprising one or more lithium sources.

21. The integrated deposition system of claim 20, wherein the controller comprises instructions for passing the substrate through the plurality of deposition stations in a manner that deposits lithium on the cathodically coloring layer and/or on the anodically coloring layer.