Creating arbitrary patterns on a 2-D uniform grid VCSEL array

• US 10,700,493 B2
• Filed: 07/29/2019
• Issued: 06/30/2020
• Est. Priority Date: 08/31/2017
• Status: Active Grant

• Current Assignee: Apple Inc.
• Original Assignee: Apple Inc.
• Inventors: Lin, Chin Han, Li, Weiping, Fan, Xiaofeng
• Primary Examiner(s): Nguyen, Tuan N
• Application Number:
  US16/524,313
• Publication Number:
  US 20190356112A1
• Time in Patent Office: 337 Days
• Field of Search: 356610, 372 5011
• CPC Class Codes: H01L 29/152 with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/0425 Electrodes, e.g. characterised by the structure
• CPC Class Codes: H01S 5/04256 characterised by the configuration
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18327 Structure being part of a DBR H01S5/18391 takes precedence
• CPC Class Codes: H01S 5/18333 only above the active layer
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/187 using Bragg reflection
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Claims

1. An optoelectronic device, comprising:

a semiconductor substrate; and

a regular array of optoelectronic cells, which are formed on the semiconductor substrate and comprise;

first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack;

second epitaxial layers formed over the lower DBR stack, defining a quantum well structure;

third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and

electrodes formed over the upper DBR stack, which are configured to inject an excitation current into the quantum well structure of at least some of the optoelectronic cells in the regular array of the optoelectronic cells,

wherein the regular array of the optoelectronic cells comprises a first set of the optoelectronic cells that are configured to emit laser radiation in response to the excitation current and a second set of the optoelectronic cells, interleaved with the first set of the optoelectronic cells, such that at least one element of the optoelectronic cells in the second set of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set of the optoelectronic cells do not emit the laser radiation,

wherein the first set of the optoelectronic cells are arranged in an uncorrelated pattern within the regular array of the optoelectronic cells.

2. The optoelectronic device of claim 1, wherein the second set of the optoelectronic cells comprise implanted ions in the upper DBR stack, which increase an electrical resistance of the upper DBR stack by an amount sufficient to reduce the excitation current injected into the quantum well structure to below a threshold required for emitting laser radiation.

3. The optoelectronic device of claim 1, wherein the electrodes of the second set of the optoelectronic cells are configured so as not to inject the excitation current into the quantum well structure.

4. The optoelectronic device of claim 3, wherein the optoelectronic cells comprise an isolation layer between the epitaxial layers and the electrodes, and wherein a part of the isolation layer is etched away in the first set of the optoelectronic cells and is not etched in the second set of the optoelectronic cells, so that the excitation current is not injected into the quantum well structure of the second set of the optoelectronic cells.

5. The optoelectronic device of claim 3, and comprising conductors configured to feed electrical current to the optoelectronic cells, and an isolation layer, which isolates the electrodes of the second set of the optoelectronic cells from the conductors, so that the electrical current is not fed to the electrodes of the second set of the optoelectronic cells.

6. The optoelectronic device of claim 1, and comprising an isolation layer formed between the lower and upper DBR stacks, wherein the isolation layer is etched out of an area of the quantum well structure in the first set of the optoelectronic cells and is not etched out of the second set of the optoelectronic cells.

7. The optoelectronic device of claim 1, wherein the lower DBR stack comprises an n-type DBR, and the upper DBR stack comprises a p-type DBR.

8. The optoelectronic device of claim 1, and comprising an isolation layer formed between the lower and upper DBR stacks, wherein the isolation layer is etched out of an area of the quantum well structure.

9. The optoelectronic device of claim 1, wherein neighboring optoelectronic cells in the array are isolated from one another by isolation trenches.

10. A method for manufacturing an optoelectronic device, the method comprising:

depositing first epitaxial layers on a semiconductor substrate to define a lower distributed Bragg-reflector (DBR) stack;

depositing second epitaxial layers over the first epitaxial layers to define a quantum well structure;

depositing third epitaxial layers over the second epitaxial layers to define an upper DBR stack;

etching the first epitaxial layers, the second epitaxial layers, and the third epitaxial layers to define a regular array of optoelectronic cells;

depositing electrodes over the third epitaxial layers, wherein the electrodes are configured to inject an excitation current into the quantum well structure of at least some of the optoelectronic cells in the regular array of the optoelectronic cells so as to cause a first set of the optoelectronic cells in the regular array of the optoelectronic cells to emit laser radiation in response to the excitation current; and

configuring at least one element, selected from among the epitaxial layers and the electrodes, of a second set the optoelectronic cells, which is interleaved with the first set of the optoelectronic cells, so that the optoelectronic cells in the second set of the optoelectronic cells do not emit the laser radiation,

wherein the first set of the optoelectronic cells are arranged in an uncorrelated pattern within the regular array of the optoelectronic cells.

11. The method of claim 10, wherein configuring the at least one element comprises implanting ions in the upper DBR stack, which increase an electrical resistance of the upper DBR stack by an amount sufficient to reduce the excitation current injected into the quantum well structure to below a threshold required for emitting laser radiation.

12. The method of claim 10, wherein configuring the at least one element comprises configuring the electrodes of the second set not to inject the excitation current into the quantum well structure.

13. The method of claim 12, wherein configuring the electrodes comprises forming an isolation layer between epitaxial layers and the electrodes, and etching away a part of the isolation layer in the first set of the optoelectronic cells while not etching the isolation layer in the second set of the optoelectronic cells, so that the excitation current is not injected into the quantum well structure of the second set of the optoelectronic cells.

14. The method of claim 12, wherein configuring the electrodes comprises configuring conductors to feed electrical current to the array of optoelectronic cells, and depositing and patterning an isolation layer so as to isolate the electrodes of the second set of the optoelectronic cells from the conductors, so that the electrical current is not fed to the electrodes of the second set of the optoelectronic cells.

15. The method of claim 10, wherein configuring the at least one element comprises depositing an isolation layer between the lower and upper DBR stacks and etching the isolation layer out of an area of the quantum well structure in the first set of the optoelectronic cells while not etching the isolation layer out of the second set of the optoelectronic cells.

16. The method of claim 10, wherein the lower DBR stack comprises an n-type DBR, and the upper DBR stack comprises a p-type DBR.

17. The method of claim 10, and comprising forming an isolation layer between the lower and upper DBR stacks, and etching the isolation layer out of an area of the quantum well structure.

18. The method of claim 10, and comprising etching isolation trenches between neighboring optoelectronic cells in the array.