Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same

• US 10,703,947 B2
• Filed: 05/03/2018
• Issued: 07/07/2020
• Est. Priority Date: 03/12/2010
• Status: Active Grant

• Current Assignee: Resonac Corp. (Resonac Holdings Corp.)
• Original Assignee: Hitachi Chemical Company Limited (Resonac Holdings Corp.)
• Inventors: Iwano, Tomohiro, Akimoto, Hirotaka, Narita, Takenori, Kimura, Tadahiro, Ryuzaki, Daisuke
• Primary Examiner(s): Dunn, Colleen P
• Assistant Examiner(s): Christie, Ross J
• Application Number:
  US15/970,353
• Publication Number:
  US 20180251664A1
• Time in Patent Office: 796 Days
• Field of Search: None
• CPC Class Codes: B24B 37/044 characterised by the composition of the lapping agent
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: C09K 3/1463 Aqueous liquid suspensions
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step

Abstract

The slurry of the invention comprises abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. The polishing liquid of the invention comprises abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %.

Claims

1. A method of adjusting a polishing rate, comprising:

adjusting light transmittance produced by abrasive grains including tetravalent cerium hydroxide particles to at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and

polishing at least a portion of a film to be polished while supplying a slurry comprising the abrasive grains between an abrasive pad and the film to be polished.

2. The method of adjusting a polishing rate according to claim 1, wherein the abrasive grains consist of the tetravalent cerium hydroxide particles.

3. A method of inhibiting reduction in a polishing rate, comprising:

adjusting light transmittance produced by abrasive grains including tetravalent cerium hydroxide particles to at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %; and

polishing at least a portion of a film to be polished while supplying a polishing liquid comprising the abrasive grains and an additive between an abrasive pad and the film to be polished.

4. The method of inhibiting reduction in a polishing rate according to claim 3, wherein the abrasive grains consist of the tetravalent cerium hydroxide particles.

5. A method of adjusting a polishing rate of a slurry comprising water and abrasive grains including tetravalent cerium hydroxide particles, the method comprising:

adjusting light transmittance produced by the abrasive grains to at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

6. The method of adjusting a polishing rate according to claim 5, wherein the abrasive grains consist of the tetravalent cerium hydroxide particles.