Hall effect sensor with enhanced sensitivity and method for producing the same
First Claim
1. A device comprising:
- a shallow trench isolation (STI) structure formed in a frame-shaped pattern in top view, the STI structure extending through a crossed-shaped silicon (Si) layer to a buried oxide (BOX) layer of a silicon-on-insulator (SOI) substrate in cross-section;
the cross-shaped Si layer formed over the BOX layer, and the cross-shaped Si layer within and adjacent to the frame-shaped STI structure; and
N+ type ion-doped implantation regions at opposite ends of the cross-shaped Si layer in top view, and formed in direct contact with the frame-shaped pattern of the STI structure in top view,wherein each N+ type ion-doped implantation region comprises a contact lead.
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Abstract
Methods of forming a high sensitivity Hall effect sensor having a thin Hall plate and the resulting devices are provided. Embodiments include providing a SOI substrate having a sequentially formed Si substrate and BOX and Si layers; forming a first STI structure in a first portion of the Si layer above the BOX layer, the first STI structure having a cross-shaped pattern; forming a second STI structure in a frame-shaped pattern in a second portion of the Si layer; the second STI structure formed outside and adjacent to the first STI structure; removing a portion of the Si layer between the first and second STI structures down to the BOX layer; removing the first STI structure, a cross-shaped Si layer remaining; and implanting N+ dopant ions into each end of the cross-shaped Si layer to form N+ implantation regions.
10 Citations
19 Claims
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1. A device comprising:
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a shallow trench isolation (STI) structure formed in a frame-shaped pattern in top view, the STI structure extending through a crossed-shaped silicon (Si) layer to a buried oxide (BOX) layer of a silicon-on-insulator (SOI) substrate in cross-section; the cross-shaped Si layer formed over the BOX layer, and the cross-shaped Si layer within and adjacent to the frame-shaped STI structure; and N+ type ion-doped implantation regions at opposite ends of the cross-shaped Si layer in top view, and formed in direct contact with the frame-shaped pattern of the STI structure in top view, wherein each N+ type ion-doped implantation region comprises a contact lead. - View Dependent Claims (2, 3, 4, 5)
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6. A device comprising:
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an isolation structure formed in a frame-shaped pattern in top view, the isolation structure extending through a cross-shaped silicon (Si) layer to an oxide layer of a silicon-on-insulator (SOI) substrate in cross section; the cross-shaped Si layer formed over the oxide layer, and the cross-shaped Si layer within and adjacent to the frame-shaped isolation structure; and ion-doped implantation regions at opposite ends of the cross-shaped Si layer in top view, and formed in direct contact with the frame-shaped pattern of the STI structure in top view, wherein each ion-doped implantation region comprises a contact lead. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A device comprising:
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a silicon-on-insulator (SOI) substrate having a sequentially formed silicon (Si) substrate and an ultra-thin buried oxide (UTBOX) and a cross-shaped Si layer; a shallow trench isolation (STI) structure formed in a frame-shaped pattern in top view and extending through the cross-shaped Si layer to the UTBOX layer in cross section; the cross-shaped Si layer formed over the UTBOX layer, and the cross-shaped Si layer within and adjacent to STI structure; and N+ dopant ions implanted into opposite ends of the cross-shaped Si layer in top view to form N+ implantation regions in direct contact with the frame-shaped pattern of the STI structure in top view, wherein each N+ implantation region comprises a contact lead. - View Dependent Claims (17, 18, 19)
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Specification