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Hall effect sensor with enhanced sensitivity and method for producing the same

  • US 10,707,408 B2
  • Filed: 11/26/2018
  • Issued: 07/07/2020
  • Est. Priority Date: 08/01/2017
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a shallow trench isolation (STI) structure formed in a frame-shaped pattern in top view, the STI structure extending through a crossed-shaped silicon (Si) layer to a buried oxide (BOX) layer of a silicon-on-insulator (SOI) substrate in cross-section;

    the cross-shaped Si layer formed over the BOX layer, and the cross-shaped Si layer within and adjacent to the frame-shaped STI structure; and

    N+ type ion-doped implantation regions at opposite ends of the cross-shaped Si layer in top view, and formed in direct contact with the frame-shaped pattern of the STI structure in top view,wherein each N+ type ion-doped implantation region comprises a contact lead.

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