Liquid crystal display device
First Claim
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1. A liquid crystal display device comprising:
- a first conductive film;
a second conductive film including a region in contact with a top surface of the first conductive film, the second conductive film extending to a first direction in plan view;
a third conductive film including a region configured to function as a gate electrode, the third conductive film extending to the first direction in plan view;
a first insulating film over the first conductive film, the second conductive film, and the third conductive film;
a first semiconductor film over the first insulating film;
a second semiconductor film over and overlapping with the first semiconductor film;
a third semiconductor film including an impurity element imparting one conductivity type, the third semiconductor film being over and overlapping with the second semiconductor film;
a fourth conductive film configured to function as a source electrode or a drain electrode, the fourth conductive film being over and overlapping with the third semiconductor film;
a second insulating film over the fourth conductive film;
a fifth conductive film electrically connected to the fourth conductive film, the fifth conductive film being over the second insulating film; and
a liquid crystal over the fifth conductive film;
wherein the fifth conductive film includes a region overlapping with the first conductive film through the second insulating film,wherein an alignment of the liquid crystal is configured to be controlled by an electric field between the fifth conductive film and the first conductive film,wherein an edge line of the third semiconductor film is positioned outside an edge line of the fourth conductive film,wherein an edge line of the second semiconductor film is positioned outside the edge line of the third semiconductor film,wherein the second semiconductor film includes a first region not overlapping with the third conductive film and in contact with the third semiconductor film, and a second region not overlapping with the third conductive film and in contact with the second insulating film, andwherein a thickness of the first region is larger than a thickness of the second region.
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Abstract
A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
168 Citations
10 Claims
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1. A liquid crystal display device comprising:
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a first conductive film; a second conductive film including a region in contact with a top surface of the first conductive film, the second conductive film extending to a first direction in plan view; a third conductive film including a region configured to function as a gate electrode, the third conductive film extending to the first direction in plan view; a first insulating film over the first conductive film, the second conductive film, and the third conductive film; a first semiconductor film over the first insulating film; a second semiconductor film over and overlapping with the first semiconductor film; a third semiconductor film including an impurity element imparting one conductivity type, the third semiconductor film being over and overlapping with the second semiconductor film; a fourth conductive film configured to function as a source electrode or a drain electrode, the fourth conductive film being over and overlapping with the third semiconductor film; a second insulating film over the fourth conductive film; a fifth conductive film electrically connected to the fourth conductive film, the fifth conductive film being over the second insulating film; and a liquid crystal over the fifth conductive film; wherein the fifth conductive film includes a region overlapping with the first conductive film through the second insulating film, wherein an alignment of the liquid crystal is configured to be controlled by an electric field between the fifth conductive film and the first conductive film, wherein an edge line of the third semiconductor film is positioned outside an edge line of the fourth conductive film, wherein an edge line of the second semiconductor film is positioned outside the edge line of the third semiconductor film, wherein the second semiconductor film includes a first region not overlapping with the third conductive film and in contact with the third semiconductor film, and a second region not overlapping with the third conductive film and in contact with the second insulating film, and wherein a thickness of the first region is larger than a thickness of the second region. - View Dependent Claims (2, 3, 4, 5)
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6. A liquid crystal display device comprising:
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a first conductive film; a second conductive film including a region in contact with a top surface of the first conductive film, the second conductive film extending to a first direction in plan view; a third conductive film including a region configured to function as a gate electrode, the third conductive film extending to the first direction in plan view; a first insulating film over the first conductive film, the second conductive film, and the third conductive film; a first semiconductor film over the first insulating film; a second semiconductor film over and overlapping with the first semiconductor film; a third semiconductor film including an impurity element imparting one conductivity type, the third semiconductor film being over and overlapping with the second semiconductor film; a fourth conductive film configured to function as a source electrode or a drain electrode, the fourth conductive film being over and overlapping with the third semiconductor film; a second insulating film over the fourth conductive film; a fifth conductive film electrically connected to the fourth conductive film, the fifth conductive film being over the second insulating film; and a liquid crystal over the fifth conductive film; wherein the fifth conductive film includes a region overlapping with the first conductive film through the second insulating film, wherein an alignment of the liquid crystal is configured to be controlled by an electric field between the fifth conductive film and the first conductive film, wherein an edge of the third semiconductor film is positioned outside an edge of the fourth conductive film in a cross-sectional view, wherein an edge of the second semiconductor film is positioned outside the edge of the third semiconductor film in the cross-sectional view, wherein the second semiconductor film includes a first region not overlapping with the third conductive film and in contact with the third semiconductor film, and a second region not overlapping with the third conductive film and in contact with the second insulating film, and wherein a thickness of the first region is larger than a thickness of the second region. - View Dependent Claims (7, 8, 9, 10)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Suzuki, Yukie, Kuwabara, Hideaki, Kimura, Hajime
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Primary Examiner(s)Kianni, Kaveh C
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Application NumberUS16/726,444Publication NumberTime in Patent Office203 DaysField of Search349156US Class CurrentCPC Class CodesG02F 1/133345 Insulating layers G02F1/133...G02F 1/1339 Gaskets; Spacers; Sealing o...G02F 1/134309 characterised by their geom...G02F 1/136286 Wiring, e.g. gate line, dra...G02F 1/1368 in which the switching elem...H01L 27/1214 comprising a plurality of T...H01L 27/1222 with a particular compositi...H01L 27/1288 employing particular maskin...H01L 29/04 characterised by their crys...H01L 29/458 for thin film silicon, e.g....H01L 29/4908 for thin film semiconductor...H01L 29/66765 Lateral single gate single ...H01L 29/78678 with inverted-type structur...H01L 29/78696 characterised by the struct...
