Integrated RF front end with stacked transistor switch

• US 10,715,200 B2
• Filed: 07/18/2019
• Issued: 07/14/2020
• Est. Priority Date: 06/23/2004
• Status: Active Grant

• Current Assignee: pSemi Corporation (Murata Manufacturing Co Limited)
• Original Assignee: pSemi Corporation (Murata Manufacturing Co Limited)
• Inventors: Burgener, Mark L., Cable, James S.
• Primary Examiner(s): Tran, Pablo N
• Application Number:
  US16/515,967
• Publication Number:
  US 20200014417A1
• Time in Patent Office: 362 Days
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H01Q 23/00 Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H03F 1/0205 in transistor amplifiers
• CPC Class Codes: H03F 1/223 with MOSFET's
• CPC Class Codes: H03F 1/56 Modifications of input or output impedances, not otherwise provided for
• CPC Class Codes: H03F 1/565 using inductive elements
• CPC Class Codes: H03F 2200/294 the amplifier being a low noise amplifier [LNA]
• CPC Class Codes: H03F 2200/372 Noise reduction and elimination in amplifier
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 2200/61 the cascode amplifier has more than one common gate stage
• CPC Class Codes: H03F 3/189 High-frequency amplifiers, e.g. radio frequency amplifiers
• CPC Class Codes: H03F 3/19 with semiconductor devices only
• CPC Class Codes: H03F 3/21 with semiconductor devices only H03F3/245 takes precedence
• CPC Class Codes: H03F 3/2171 with field-effect devices H03F3/2173 - H03F3/2178 take precedence
• CPC Class Codes: H03F 3/68 Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602
• CPC Class Codes: H03G 11/00 Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
• CPC Class Codes: H03G 3/3042 in modulators, frequency-changers, transmitters or power amplifiers transmission power control in bidirectional transmission systems H04W52/04
• CPC Class Codes: H04B 1/0053 with common antenna for more than one band
• CPC Class Codes: H04B 1/0475 with means for limiting noise, interference or distortion H04B1/0483 takes precedence
• CPC Class Codes: H04B 1/48 : in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter H04B1/46 takes precedence
• CPC Class Codes: H04L 27/04 : Modulator circuits; Transmitter circuits

Abstract

A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.

Claims

1. A module comprising:

at least one integrated RF Power Amplifier (PA) circuit;

wherein the at least one integrated RF PA circuit is incorporated into the module and further includes;

an input node to accept an input signal with respect to a reference voltage, the input node connected to a first gate of a first MOSFET, wherein a source of the first MOSFET is connected to the reference voltage;

one or more MOSFETs connected in series with the first MOSFET to form a transistor stack, wherein the first MOSFET comprises a bottom transistor of the transistor stack, and the one or more MOSFETs comprise intermediate transistors and/or a top transistor of the transistor stack, wherein the transistor stack is configured to control conduction between the reference voltage and an output drive node, and wherein the output drive node is connected to a drain of the top transistor of the transistor stack; and

one or more predominantly capacitive elements connected directly between a corresponding gate of the one or more MOSFETs and the reference voltage.

2. The module of claim 1, wherein:

each gate of the one or more MOSFETs is connected to a corresponding bias resistor of one or more bias resistors;

each bias resistor of the one or more bias resistors is connected to a corresponding bias voltage of one or more bias voltages;

The one or more bias voltages are set to produce desired DC voltages across MOSFETS of the one or more MOSFETs.

3. The module of claim 2, further comprising an output matching network.

4. The module of claim 1, wherein a gate capacitor of one or more gate capacitors connects a corresponding gate of the one or more MOSFETs to a reference voltage, and wherein RF voltages across MOSFETs of the one or more MOSFETs are determined by capacitances of the corresponding gate capacitors of the one or more gate capacitors.

5. The module of claim 1, wherein the first MOSFET and the one or more MOSFETs are fabricated in a silicon layer of a silicon-on-insulator (SOI) substrate.

6. The module of claim 3, further comprising a switch coupled to the output drive node.

7. A communication device comprising at least one integrated RF Power Amplifier (PA) circuit,

wherein the at least one integrated RF PA circuit is incorporated into the communication device and further includes:

an input node to accept an input signal with respect to a reference voltage, the input node connected to a first gate of a first MOSFET, wherein a source of the first MOSFET is connected to the reference voltage;

one or more MOSFETs connected in series with the first MOSFET to form a transistor stack, wherein the first MOSFET comprises a bottom transistor of the transistor stack, and the one or more MOSFETs comprise intermediate transistors and/or a top transistor of the transistor stack, wherein the transistor stack is configured to control conduction between the reference voltage and an output drive node, and wherein the output drive node is connected to a drain of the top transistor of the transistor stack; and

one or more predominantly capacitive elements connected directly between a corresponding gate of the one or more MOSFETs and the reference voltage.

8. The communication device of claim 7, wherein:

each gate of the one or more MOSFETs is connected to a corresponding bias resistor of one or more bias resistors;

each bias resistor of the one or more bias resistors is connected to a corresponding bias voltage of one or more bias voltages;

the one or more bias voltages are set to produce desired DC voltages across MOSFETS of the one or more MOSFETs.

9. The communication device of claim 8, further comprising an output matching network.

10. The communication device of claim 7, wherein a gate capacitor of one or more gate capacitors connects a corresponding gate of the one or more MOSFETs to a ground reference, and wherein RF voltages across MOSFETs of the one or more MOSFETs are determined by capacitances of the corresponding gate capacitors of the one or more gate capacitors.

11. The communication device of claim 7, wherein the first MOSFET and the one or more MOSFETs are fabricated in a silicon layer of a silicon-on-insulator (SOI) substrate.

12. The communication device of claim 7, wherein the first MOSFET and the one or more MOSFETs have approximately equal voltages across their corresponding drains-sources.

13. The communication device of claim 7, wherein the RF PA circuit comprises a PA selected from a Class A, B, C, AB, and F RF PA.

14. An RF front-end comprising at least one integrated RF Power Amplifier (PA) circuit and other RF front-end components,

wherein the at least one integrated RF PA circuit and other RF front-end components are incorporated into the RF front-end, the at least one integrated RF PA circuit further including:

an input node to accept an input signal with respect to a reference voltage, the input node connected to a first gate of a first MOSFET, wherein a source of the first MOSFET is connected to the reference voltage;

one or more MOSFETs connected in series with the first MOSFET to form a transistor stack, wherein the first MOSFET comprises a bottom transistor of the transistor stack, and the one or more MOSFETs comprise intermediate transistors and/or a top transistor of the transistor stack, wherein the transistor stack is configured to control conduction between the reference voltage and an output drive node, and wherein the output drive node is connected to a drain of the top transistor of the transistor stack; and

one or more predominantly capacitive elements connected directly between a corresponding gate of the one or more MOSFETs and the reference voltage.

15. The RF front-end of claim 14, wherein:

each gate of the one or more MOSFETs is connected to a corresponding bias resistor of one or more bias resistors;

each bias resistor of the one or more bias resistors is connected to a corresponding bias voltage of one or more bias voltages;

the one or more bias voltages are set to produce desired DC voltages across MOSFETS of the one or more MOSFETs.

16. The RF front-end of claim 15, further comprising an output matching network.

17. The RF front-end of claim 14, wherein a gate capacitor of one or more gate capacitors connects a corresponding gate of the one or more MOSFETs to a ground reference, and wherein RF voltages across MOSFETs of the one or more MOSFETs are determined by capacitances of the corresponding gate capacitors of the one or more gate capacitors.

18. The RF front-end of claim 14, wherein the first MOSFET and one ore more MOSFETs are fabricated in a silicon layer of a silicon-on-insulator (SOI) substrate.

19. The RF front-end of claim 14, wherein the first MOSFET and the one or more MOSFETs have approximately equal voltages across their corresponding drains-sources.

20. The RF front-end of claim 14, wherein the RF PA circuit comprises a PA selected from a Class A, B, C, AB, and F RF PA.