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Rare-earth oxide based erosion resistant coatings for semiconductor application

  • US 10,734,202 B2
  • Filed: 06/03/2015
  • Issued: 08/04/2020
  • Est. Priority Date: 06/05/2013
  • Status: Active Grant
First Claim
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1. A component for a processing chamber comprising:

  • a body of the component for the processing chamber, the body comprising an approximately planar surface area comprising an unroughened surface region and a roughened surface region on the approximately planar surface area, the roughened surface region having a first surface roughness of about 120-240 μ

    in and the unroughened surface region having a second surface roughness that is lower than the first surface roughness; and

    a plasma resistant ceramic coating on the roughened surface region of the approximately planar surface area of the body and not on the unroughened surface region of the approximately planar surface area of the body,wherein the plasma resistant ceramic coating is a plasma sprayed coating that consists essentially of Y2O3 in a range between about 45 mol % to about 73 mol % and ZrO2 in a range from about 27 mol % to about 55 mol %,the plasma resistant ceramic coating comprising a post-polished surface roughness of about 6 μ

    m to about 12 μ

    m and a post-polished thickness of about 5 mil to about 25 mil,wherein the plasma resistant ceramic coating comprises at least one of a tapered edge or a chamfered edge at an interface between the roughened surface region and the unroughened surface region.

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