Lateral bipolar junction transistor with dual base region

• US 10,734,505 B2
• Filed: 11/30/2017
• Issued: 08/04/2020
• Est. Priority Date: 11/30/2017
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Hashemi, Pouya, Hekmatshoartabari, Bahman, Reznicek, Alexander, Balakrishnan, Karthik, Yau, Jeng-Bang
• Primary Examiner(s): Le, Thao P
• Application Number:
  US15/828,152
• Publication Number:
  US 20190165150A1
• Time in Patent Office: 978 Days
• CPC Class Codes: H01L 21/26546 of electrically active species
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface
• CPC Class Codes: H01L 21/266 using masks H01L21/26586 takes precedence
• CPC Class Codes: H01L 21/30612 Etching of AIIIBV compounds
• CPC Class Codes: H01L 21/308 using masks H01L21/3063, H01L21/3065 take precedence
• CPC Class Codes: H01L 29/0808 of lateral transistors
• CPC Class Codes: H01L 29/0821 Collector regions of bipolar transistors
• CPC Class Codes: H01L 29/1008 of lateral transistors
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/6625 Lateral transistors H01L29/66242 and H01L29/66265 take precedence
• CPC Class Codes: H01L 29/66318 Heterojunction transistors
• CPC Class Codes: H01L 29/735 Lateral transistors
• CPC Class Codes: H01L 29/737 Hetero-junction transistors

Abstract

A structure and method of forming a lateral bipolar junction transistor (LBJT) that includes: a first base layer, a second base layer over the first base layer, and an emitter region and collector region present on opposing sides of the first base layer, where the first base layer has a wider-band gap than the second base layer, and where the first base layer includes a III-V semiconductor material.

Claims

1. A lateral bipolar junction transistor (LBJT) device comprising:

a first base layer;

a second base layer over the first base layer; and

an emitter region and collector region present on opposing sides of the first base layer, wherein the first base layer has a wider-band gap than the second base layer, and

wherein the first base layer comprises a III-V semiconductor material and the second base layer comprises a semiconductor material, wherein the first base layer and the second base layer are lattice matched, and wherein the first base layer and the insulating layer are substantially lattice mismatched.

2. The LBJT device according to claim 1, wherein the first base layer and second base layer form a dual base region.

3. The LBJT device according to claim 1, wherein the second base layer comprises a III-V material.

4. The LBJT device according to claim 3, wherein the second base layer has a thickness greater than the first base layer.

5. The LBJT device according to claim 4, wherein the first base layer and the second base layer comprise a material selected from the group consisting of:

indium phosphide (InP), indium aluminum arsenide (InAlAs), indium gallium arsenide (InGaAs), gallium arsenide (GaAs), gallium phosphide (GaP), indium antimonide (InSb), indium arsenide (InAs), indium nitride (InN), indium phosphide (InP), aluminum gallium arsenide (AlGaAs), indium gallium phosphide (InGaP), aluminum indium arsenide (AlInAs), aluminum indium antimonide (AlInSb), gallium arsenide nitride (GaAsN).

6. The LBJT device according to claim 5, wherein the emitter and collection regions both include a III-V material.

7. The LBJT device according to claim 6, wherein the collector and emitter regions both have a wider bandgap than the active base region of the device, wherein the active base region includes one or both of the first base layer and the second base layer.

8. The LBJT device according to claim 7, further comprising an extrinsic base layer over the active base region.

9. The LBJT device according to claim 8, wherein the extrinsic base layer includes a III-V semiconductor material.