Semiconductor device with integrated capacitor and manufacturing method thereof

  • US 10,741,488 B2
  • Filed: 02/21/2018
  • Issued: 08/11/2020
  • Est. Priority Date: 09/29/2017
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor structure, comprising:

  • a capacitor comprising a first conductive plate, a second conductive plate and a third conductive plate, the second conductive plate electrically insulated from the first conductive plate and the third conductive plate, and each of the first conductive plate, the second conductive plate and the third conductive plate comprising a planar surface;

    a first conductive via extending through the first conductive plate and the third conductive plate, and contacting the planar surface of the first conductive plate and the planar surface of the third conductive plate;

    a second conductive via extending through the second conductive plate and contacting the planar surface of the second conductive plate; and

    a conductive line below the first conductive plate, wherein the conductive line comprises an upper surface, wherein the first conductive via terminates on the upper surface of the conductive line.

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