Sensing structure of alignment of a probe for testing integrated circuits

• US 10,746,788 B2
• Filed: 03/07/2019
• Issued: 08/18/2020
• Est. Priority Date: 06/10/2010
• Status: Active Grant

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: Pagani, Alberto
• Primary Examiner(s): Hollington, Jermele M
• Assistant Examiner(s): Rhodes-Vivour, Temilade S
• Application Number:
  US16/296,052
• Publication Number:
  US 20190204381A1
• Time in Patent Office: 530 Days
• CPC Class Codes: B06B 2201/00 Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
• CPC Class Codes: C12Q 1/00 Measuring or testing processes involving enzymes, nucleic acids or microorganisms measuring or testing apparatus with condition measuring or sensing means, e.g. colony counters, C12M1/34; Compositions therefor; Processes of preparing such compositions
• CPC Class Codes: C12Q 2304/00 Chemical means of detecting microorganisms hydrolase substrates C12Q2334/00, peptidase substrates C12Q2337/00
• CPC Class Codes: C12Q 2326/00 Chromogens for determinations of oxidoreductase enzymes
• CPC Class Codes: G01N 1/00 Sampling; Preparing specimens for investigation
• CPC Class Codes: G01R 1/06794 Devices for sensing when probes are in contact, or in position to contact, with measured object
• CPC Class Codes: G01R 11/00 Electromechanical arrangements for measuring time integral of electric power or current, e.g. of consumption monitoring electric consumption of electrically-propelled vehicles B60L3/00
• CPC Class Codes: G01R 31/2884 using dedicated test connectors, test elements or test circuits on the IC under test G01R31/2855 takes precedence
• CPC Class Codes: G01R 31/2891 related to sensing or controlling of force, position, temperature G01R31/2874 takes precedence; sensing of force G01L; sensing of position G01B, G01D; sensing of temperature G01K; controlling in general G05
• CPC Class Codes: H01L 21/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633
• CPC Class Codes: H01L 2221/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

Abstract

A sensing structure is presented for use in testing integrated circuits on a substrate. The sensing structure includes a probe region corresponding to a conductive region for connecting to the integrated circuit. A first sensing region at least partially surrounds the probe region. A plurality of sensing elements connects in series such that a first of the plurality of sensing elements has two terminals respectively connected to the first sensing region and the probe region. And a second of the plurality of sensing elements has two terminals respectively connected to the probe region and a first reference potential.

Claims

1. A sensing structure for use in testing an integrated circuit on a substrate, the sensing structure comprising:

a layer of non-conductive material having a top surface;

a top-most layer of the integrated circuit that is made of passivation material, wherein said top-most layer is in contact with the top surface of the layer of non-conductive material;

a conductive probe region passing completely through both the top-most layer made of passivation material and the layer of non-conductive material, said conductive probe region having a top surface that is above a top surface of the top-most layer made of passivation material, wherein the top surface of the conductive probe region is configured for contact with a testing probe; and

a conductive sensing element region passing completely through both the top-most layer made of passivation material and the layer of non-conductive material, said conductive sensing element region having a top surface that is above the top surface of the top-most layer made of passivation material;

wherein the conductive sensing element region is electrically insulated from the conductive probe region by portions of both the top-most layer made of passivation material and the layer of non-conductive material.

2. The sensing structure of claim 1, wherein the top surfaces of the conductive probe region and conductive sensing element region are co-planar.

3. The sensing structure of claim 1, further comprising a first diode having a first terminal electrically connected to the conductive probe region and a second terminal electrically connected to the conductive sensing element region.

4. The sensing structure of claim 3, wherein the first terminal of the first diode is a cathode terminal and the second terminal of the first diode is an anode terminal.

5. The sensing structure of claim 3, further comprising a second diode having a first terminal electrically connected to the conductive probe region and a second terminal electrically connected to a reference voltage node.

6. The sensing structure of claim 5, wherein the first terminal of the first diode is an anode terminal, the second terminal of the first diode is a cathode terminal, the first terminal of the second diode is a cathode terminal and the second terminal of the second diode is an anode terminal.

7. The sensing structure of claim 1, wherein the conductive sensing element region at least partially surrounds the conductive probe region.

8. The sensing structure of claim 7, wherein the conductive probe region has a circular shape in plan view and the conductive sensing element region has an arcuate shape in plan view.

9. The sensing structure of claim 7, wherein the conductive probe region has a shape in plan view with a flat side edge and the conductive sensing element region includes a linear segment extending along and parallel to said flat side edge.

10. The sensing structure of claim 1, wherein the top surface of the conductive sensing element region is configured for contact with a misaligned testing probe.

11. The sensing structure of claim 1, wherein the top surface of the conductive sensing element region is configured for contact with said testing probe in a misaligned position.

12. A sensing structure for use in testing an integrated circuit on a substrate, the sensing structure comprising:

a layer of non-conductive material having a top surface;

a top-most layer of the integrated circuit that is made of passivation material, wherein said top-most layer is in contact with the top surface of the layer of non-conductive material;

a conductive probe region passing completely through both the top-most layer made of passivation material and the layer of non-conductive material, said conductive probe region having a top surface that is above a top surface of the top-most layer made of passivation material, wherein the top surface of the conductive probe region is configured for contact with a testing probe; and

a conductive sensing element region supported by, without passing completely through, the top-most layer made of passivation material, said conductive sensing element region having a top surface that is above the top surface of the top-most layer made of passivation material;

wherein the conductive sensing element region is electrically insulated from the conductive probe region by a portion of the top-most layer made of passivation material.

13. The sensing structure of claim 12, wherein the top surfaces of the conductive probe region and conductive sensing element region are co-planar.

14. The sensing structure of claim 12, further comprising a first diode having a first terminal electrically connected to the conductive probe region and a second terminal electrically connected to the conductive sensing element region.

15. The sensing structure of claim 14, wherein the first terminal of the first diode is a cathode terminal and the second terminal of the first diode is an anode terminal.

16. The sensing structure of claim 14, further comprising a second diode having a first terminal electrically connected to the conductive probe region and a second terminal electrically connected to a reference voltage node.

17. The sensing structure of claim 16, wherein the first terminal of the first diode is an anode terminal, the second terminal of the first diode is a cathode terminal, the first terminal of the second diode is a cathode terminal and the second terminal of the second diode is an anode terminal.

18. The sensing structure of claim 12, wherein the first conductive sensing element region at least partially surrounds the conductive probe region.

19. The sensing structure of claim 18, wherein the conductive probe region has a circular shape in plan view and the conductive sensing element region has an arcuate shape in plan view.

20. The sensing structure of claim 18, wherein the conductive probe region has a shape in plan view with a flat side edge and the conductive sensing element region includes a linear segment extending along and parallel to said flat side edge.

21. The sensing structure of claim 12, wherein the top surface of the conductive sensing element region is configured for contact with a misaligned testing probe.

22. The sensing structure of claim 12, wherein the top surface of the conductive sensing element region is configured for contact with said testing probe in a misaligned position.