Structure and system for simultaneous sensing a magnetic field and mechanical stress

• US 10,746,817 B2
• Filed: 11/09/2017
• Issued: 08/18/2020
• Est. Priority Date: 07/28/2015
• Status: Active Grant

• Current Assignee: Allegro Microsystems Incorporated (Sanken Electric Company Limited)
• Original Assignee: Allegro Microsystems Incorporated (Sanken Electric Company Limited)
• Inventors: Kosier, Steven, Delmain, Gregory
• Primary Examiner(s): Hollington, Jermele M
• Assistant Examiner(s): Nasir, Taqi R
• Application Number:
  US15/807,741
• Publication Number:
  US 20180321329A1
• Time in Patent Office: 1,013 Days
• Field of Search: 324 66- 67, 324160-180, 324 711-157, 324425-470, 324200-263, 32475001-76401, 3242072, 32420725, 732072, 7320725, 73200-263, 73 66-132
• CPC Class Codes: G01R 33/0082 Compensation, e.g. compensating for temperature changes
• CPC Class Codes: G01R 33/07 Hall effect devices

Abstract

A structure having collocated magnetic field sensing elements can be used to simultaneously determine magnetic field and mechanical stress. A primary magnetic field sensing element generates a primary signal responsive to a magnetic field and a secondary magnetic field sensing element generates a secondary signal responsive to mechanical stress. A system includes a stress compensation module to receive the primary and signals, and to compensate for mechanical stress in the primary signal.

Claims

1. A dual Hall element comprising:

a substrate having a bottom surface and a top surface;

an N-type epitaxial layer disposed over the substrate top surface, the epitaxial layer having a top surface and a bottom surface;

a barrier structure disposed over the substrate and extending perpendicular from the epitaxial layer top surface so as to form a barrier to electrical charges within the epitaxial layer and resulting in a bounded region of the epitaxial layer having a generally octagonal shape;

a P-well region diffused into the epitaxial layer; and

a plurality of pickups implanted and diffused into the epitaxial layer, opposing pairs of the plurality of pickups separated by the P-well region, each one of the plurality of pickups comprising an N+ type diffusion,

wherein a first set of the plurality of pickups is operable to form a first planar Hall element and a second different set of the plurality of pickups is operable to form a second planar Hall element.

2. The dual Hall element of claim 1, wherein the first planar Hall element has a first central axis perpendicular to the top surface of the substrate, wherein the second planar Hall element has a second central axis perpendicular to the top surface of the substrate, wherein the first and second central axes are substantially collocated.

3. A dual Hall element comprising:

a substrate having a bottom surface and a top surface;

an N-type epitaxial layer disposed over the substrate top surface, the epitaxial layer having a top surface and a bottom surface;

a barrier structure disposed over the substrate and extending perpendicular from the epitaxial layer top surface so as to form a barrier to electrical charges within the epitaxial layer;

a P-well region diffused into the epitaxial layer;

a first plurality of pickups implanted and diffused into the epitaxial layer, opposing pairs of the first plurality of pickups separated by the P-well region, each one of the first plurality of pickups comprising an N+ type diffusion; and

a second plurality of pickups implanted and diffused into the P-well region, each one of the second plurality of pickups comprising a P+ type diffusion,

wherein the first plurality of pickups is operable to form a first planar Hall element and the second plurality of pickups is operable to form a second planar Hall element.

4. The dual Hall element of claim 3, wherein the first planar Hall element has a first central axis perpendicular to the top surface of the substrate, wherein the second planar Hall element has a second central axis perpendicular to the top surface of the substrate, wherein the first and second central axes are substantially collocated.

5. A dual Hall element comprising:

a bottom structure including;

a substrate having a bottom surface and a top surface;

an N-type epitaxial layer disposed over the substrate top surface, the epitaxial layer having a top surface and a bottom surface;

a barrier structure disposed over the substrate and extending perpendicular from the epitaxial layer top surface so as to form a barrier to electrical charges within the epitaxial layer;

a P-well region diffused into the epitaxial layer; and

a first plurality of pickups implanted and diffused into the epitaxial layer, opposing pairs of the first plurality of pickups separated by the P-well region, each one of the first plurality of pickups comprising an N+ type diffusion; and

a top structure electrically isolated from the bottom structure via an isolation region, the top structure including;

a top layer; and

a second plurality of pickups implanted and diffused into the top layer,

wherein the first plurality of pickups is operable to form a first planar Hall element and the second plurality of pickups is operable to form a second planar Hall element.

6. The dual Hall element of claim 5 wherein the top layer comprises a poly silicon material.

7. The dual Hall element of claim 5 wherein each one of the second plurality of pickups comprises a P+ type diffusion.

8. The dual Hall element of claim 5 wherein each one of the second plurality of pickups comprises a N+ type diffusion.

9. The dual Hall element of claim 5, wherein the first planar Hall element has a first central axis perpendicular to the top surface of the substrate, wherein the second planar Hall element has a second central axis perpendicular to the top surface of the substrate, wherein the first and second central axes are substantially collocated.

10. A dual Hall element comprising:

a substrate having a bottom surface and a top surface;

an P-type epitaxial layer disposed over the substrate top surface, the epitaxial layer having a top surface and a bottom surface;

an N-well region diffused into the epitaxial layer;

a P-well region diffused into the N-well region;

a first plurality of pickups implanted and diffused into the N-well region, opposing pairs of the first plurality of pickups separated by the P-well region, each one of the first plurality of pickups comprising an N+ type diffusion; and

a second plurality of pickups implanted and diffused into the P-well region, each one of the second plurality of pickups comprising a P+ type diffusion,

wherein the first plurality of pickups is operable to form a first Hall element and the second plurality of pickups is operable to form a second Hall element.

11. The dual Hall element of claim 10, wherein the first Hall element comprises a first planar Hall element, and wherein the second planar Hall element comprises a second planar Hall element.

12. The dual Hall element of claim 10, wherein the first planar Hall element has a first central axis perpendicular to the top surface of the substrate, wherein the second planar Hall element has a second central axis perpendicular to the top surface of the substrate, wherein the first and second central axes are substantially collocated.

13. A magnetic field sensor comprising a dual Hall element, the dual Hall element comprising:

a substrate having a bottom surface and a top surface;

an N-type epitaxial layer disposed over the substrate top surface;

a first planar Hall element disposed within or over the epitaxial layer, the first planar Hall element having a first plurality of pickups with a first center between the first plurality of pickups; and

a second planar Hall element disposed within or over the epitaxial layer, the second planar Hall element having a second different plurality of pickups with a second center between the second plurality of pickups, wherein the first and second centers are substantially collocated.

14. The magnetic field sensor of claim 13, wherein the first planar Hall element has a first sensitivity to a magnetic field and a first sensitivity to mechanical stress in the substrate, the first planar Hall element for generating a first output signal responsive to the magnetic field, the first magnetic field sensitivity, mechanical stress in the substrate, and the first mechanical stress sensitivity, and wherein the second planar Hall element has a second sensitivity to the magnetic field and a second sensitivity to mechanical stress in the substrate, the second planar Hall element for generating a second output signal responsive to the magnetic field, the second magnetic field sensitivity, the mechanical stress in the substrate, and the second mechanical stress sensitivity.

15. The magnetic field sensor of claim 14, further comprising:

a stress compensation module coupled to receive a first stress compensation input signal responsive to the first output signal and a second stress compensation input signal responsive to the second output signal and to generate a stress compensation signal; and

an adjustable gain stage coupled to amplify the first output signal with a gain in accordance with the stress compensation signal to generate a stress-compensated output signal, wherein the stress-compensated output signal is responsive to the magnetic field, and is not responsive to the mechanical stress in the substrate.

16. The magnetic field sensor of claim 15, wherein the stress compensation module is configured to calculate the gain using the first magnetic field sensitivity, the second magnetic field sensitivity, the first output signal, and the second output signal, wherein the stress compensation signal is based upon the gain.

17. The magnetic field sensor of claim 15, wherein the stress compensation module is configured to calculate the gain using the first magnetic field sensitivity and the second magnetic field sensitivity, wherein the stress compensation signal is based upon the gain.

18. The magnetic field sensor of claim 15, further comprising a first amplifier coupled to receive the first output signal and to generate the first stress compensation input signal and a second amplifier coupled to receive the second output signal and to generate the second stress compensation input signal.

19. The magnetic field sensor of claim 18, wherein the first and second output signals are responsive to a substrate temperature, wherein the first and second stress compensation signals are not responsive to the substrate temperature.

20. The magnetic field sensor of claim 18, further comprising a threshold detector coupled to receive a threshold level signal and a threshold detector input signal responsive to the first output signal, the threshold detector configured to generate an enabling signal based upon the threshold level signal and the threshold detector input signal.

21. The magnetic field sensor of claim 20, wherein the stress compensation module is coupled to receive the enabling signal and configured to calculate the gain in response to the enabling signal.

22. The magnetic field sensor of claim 13, wherein the first planar Hall element has a first central axis perpendicular to the top surface of the substrate, wherein the second planar Hall element has a second central axis perpendicular to the top surface of the substrate, wherein the first and second central axes are substantially collocated.