TFT substrate and method for making same

  • US 10,749,039 B2
  • Filed: 12/06/2016
  • Issued: 08/18/2020
  • Est. Priority Date: 12/16/2015
  • Status: Active Grant
First Claim
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1. A TFT substrate comprising:

  • a substrate;

    a semiconductor layer formed on the substrate, the semiconductor layer having a top surface and a bottom surface opposite to and facing away from the top surface;

    a first conductive layer formed on the bottom surface of the semiconductor layer, the first conductive layer defining a gate electrode; and

    a second conductive layer formed on the top surface of the semiconductor layer opposite to the first conductive layer, the second conductive layer defining a source electrode and a drain electrode spaced apart from the source electrode;

    wherein the second conductive layer comprises a first layer positioned on the semiconductor layer, a second layer positioned on the first layer, and a third layer positioned on the second layer;

    the second layer is made of aluminum;

    both the third layer and the first layer are made of a same metal oxide;

    an etching rate of the third layer is greater than an etching rate of the first layer when the second conductive layer is etched by a single etching solution or a single etching gas;

    wherein both the third layer and the first layer are made of a same metal oxide containing zinc;

    the third layer has an atomic percentage of zinc greater than that of the first layer.

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