Manufacturable RGB laser diode source
First Claim
1. An integrated multi-wavelength light emitting device, the device provided from a first substrate having a first surface region and a first epitaxial material overlying the first surface region, the first epitaxial material comprising a first release region, an n-type cladding region, a first active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the first active region, the first active region being configured for emission at a first wavelength, and a second substrate having a second surface region and a second epitaxial material overlying the second surface region, the second epitaxial material comprising a second release region, an n-type cladding region, a second active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the second active region, the second active region being configured for emission at a second wavelength such that the first epitaxial material and the second epitaxial material are patterned to form a plurality of first epitaxial dice and a plurality of second epitaxial dice overlying the first substrate and the second substrate, respectively, each of the plurality of first epitaxial dice and the plurality of second epitaxial dice corresponding to at least one light emitting device, the device comprising:
- at least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice transferred from the first substrate and from the second substrate, respectively, to a carrier wafer by selectively etching the first release region and the second release region, separating from the first substrate and from the second substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred.
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Abstract
A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.
260 Citations
19 Claims
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1. An integrated multi-wavelength light emitting device, the device provided from a first substrate having a first surface region and a first epitaxial material overlying the first surface region, the first epitaxial material comprising a first release region, an n-type cladding region, a first active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the first active region, the first active region being configured for emission at a first wavelength, and a second substrate having a second surface region and a second epitaxial material overlying the second surface region, the second epitaxial material comprising a second release region, an n-type cladding region, a second active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the second active region, the second active region being configured for emission at a second wavelength such that the first epitaxial material and the second epitaxial material are patterned to form a plurality of first epitaxial dice and a plurality of second epitaxial dice overlying the first substrate and the second substrate, respectively, each of the plurality of first epitaxial dice and the plurality of second epitaxial dice corresponding to at least one light emitting device, the device comprising:
at least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice transferred from the first substrate and from the second substrate, respectively, to a carrier wafer by selectively etching the first release region and the second release region, separating from the first substrate and from the second substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. An integrated multi-wavelength light emitting device, the device comprising:
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at least one of a first plurality of epitaxial dice, a second plurality of epitaxial dice, and a third plurality of epitaxial dice transferred, respectively, from a first substrate, a second substrate, and a third substrate to a carrier wafer by selectively etching a release region, separating from each of the first substrate, the second substrate, and the third substrate each of the first epitaxial dice, the second epitaxial dice, and the third epitaxial dice that is being transferred, and selectively bonding to the carrier wafer each of the first epitaxial dice, the second epitaxial dice, and the third epitaxial dice that is being transferred; and wherein the transferred first epitaxial dice, the second epitaxial dice, and the third epitaxial dice on the carrier wafer are processed to form an RGB emitting devices capable of emitting a red wavelength, a green wavelength, and a blue wavelength. - View Dependent Claims (17, 18, 19)
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Specification