RF circuit with switch transistor with body connection
First Claim
Patent Images
1. A Radio Frequency (RF) switch core comprising:
- a first RF switch coupled in series between an upstream RF node and a downstream RF node, wherein the first RF switch comprises a first series connected plurality of transistors, further wherein each of the transistors of the first series connected plurality of transistors includes a first gate control voltage and a first body control voltage, further wherein the first body control voltage is produced independently of the first gate control voltage and is positively biased during an ON state of the first RF switch, further wherein a body current is linearly dependent on the first body control voltage and the first body control voltage is greater than a built-in p-n junction diode of a transistor of the first RF switch during the ON state of the first RF switch; and
a second RF switch coupling the downstream RF node to ground.
3 Assignments
0 Petitions
Accused Products
Abstract
In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.
31 Citations
18 Claims
-
1. A Radio Frequency (RF) switch core comprising:
-
a first RF switch coupled in series between an upstream RF node and a downstream RF node, wherein the first RF switch comprises a first series connected plurality of transistors, further wherein each of the transistors of the first series connected plurality of transistors includes a first gate control voltage and a first body control voltage, further wherein the first body control voltage is produced independently of the first gate control voltage and is positively biased during an ON state of the first RF switch, further wherein a body current is linearly dependent on the first body control voltage and the first body control voltage is greater than a built-in p-n junction diode of a transistor of the first RF switch during the ON state of the first RF switch; and a second RF switch coupling the downstream RF node to ground. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A Radio Frequency (RF) circuit comprising:
-
a first RF switch coupling an RF downstream node to ground, wherein the first RF switch comprises a first series connected plurality of transistors, further wherein each transistor of the first series connected plurality of transistors includes a first gate control voltage produced by a first voltage source and a first body control voltage produced by a second voltage source, further wherein the first body control voltage is positively biased during an ON state of the first RF switch, further wherein a body current is linearly dependent on the first body control voltage and the first body control voltage is greater than a built-in p-n junction diode of a transistor of the first RF switch during the ON state of the first RF switch; and a second RF switch coupled in series between an RF antenna side node and the RF downstream node. - View Dependent Claims (10, 11, 12, 13)
-
-
14. A Radio Frequency (RF) circuit for routing an RF carrier signal between an antenna and downstream components of an RF device, the RF circuit comprising:
-
a first RF switch coupled between the antenna and a downstream node, wherein the first RF switch comprises a first plurality of N-channel transistors connected in series, further wherein each N-channel transistor of the first plurality of N-channel transistors includes a first gate control voltage produced by a first voltage source and a first body control voltage produced by a second voltage source, further wherein the first body control voltage is positively biased during an ON state of the first RF switch, further wherein a body current is linearly dependent on the first body control voltage and the first body control voltage is greater than a built-in p-n junction diode of an N-channel transistor of the first RF switch during the ON state of the first RF switch; and a second RF switch coupled between the downstream node and ground, wherein the second RF switch comprises a second plurality of N-channel transistors connected in series, further wherein each N-channel transistor of the second plurality of N-channel transistors includes a second gate control voltage produced by the first voltage source and a second body control voltage produced by the second voltage source, further wherein the second body control voltage is positively biased during an ON state of the second RF switch. - View Dependent Claims (15, 16, 17, 18)
-
Specification