Integrated use of model-based metrology and a process model
First Claim
1. A method comprising:
- providing illumination radiation to a target structure fabricated on a semiconductor wafer, the illumination radiation provided by an illumination source of a metrology tool;
detecting an amount of radiation from the target structure in response to the illumination radiation, the amount of radiation detected by a detector of the metrology tool;
generating a measured response associated with the target structure based on the detected radiation, the measured response comprising an amount of measurement data;
determining a set of geometric parameter values characterizing the target structure and one or more process parameter values characterizing a fabrication process employed by a semiconductor process tool to fabricate the target structure on the semiconductor wafer based on a fitting of the amount of measurement data to an integrated measurement model of the target structure, wherein the integrated measurement model is based on a process based target model that constrains values of one or more of the set of geometric parameters characterizing the target structure based on a range of achievable values of one or more fabrication process parameters of the process based target model and a metrology based target model that predicts the measured response based on a model of an interaction of the target structure with the metrology tool; and
communicating the one or more process parameter values to the semiconductor process tool, that causes the semiconductor process tool to adjust one or more process parameters of the semiconductor process tool to achieve a desired target structure.
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Abstract
Methods and systems for performing measurements based on a measurement model integrating a metrology-based target model with a process-based target model. Systems employing integrated measurement models may be used to measure structural and material characteristics of one or more targets and may also be used to measure process parameter values. A process-based target model may be integrated with a metrology-based target model in a number of different ways. In some examples, constraints on ranges of values of metrology model parameters are determined based on the process-based target model. In some other examples, the integrated measurement model includes the metrology-based target model constrained by the process-based target model. In some other examples, one or more metrology model parameters are expressed in terms of other metrology model parameters based on the process model. In some other examples, process parameters are substituted into the metrology model.
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Citations
30 Claims
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1. A method comprising:
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providing illumination radiation to a target structure fabricated on a semiconductor wafer, the illumination radiation provided by an illumination source of a metrology tool; detecting an amount of radiation from the target structure in response to the illumination radiation, the amount of radiation detected by a detector of the metrology tool; generating a measured response associated with the target structure based on the detected radiation, the measured response comprising an amount of measurement data; determining a set of geometric parameter values characterizing the target structure and one or more process parameter values characterizing a fabrication process employed by a semiconductor process tool to fabricate the target structure on the semiconductor wafer based on a fitting of the amount of measurement data to an integrated measurement model of the target structure, wherein the integrated measurement model is based on a process based target model that constrains values of one or more of the set of geometric parameters characterizing the target structure based on a range of achievable values of one or more fabrication process parameters of the process based target model and a metrology based target model that predicts the measured response based on a model of an interaction of the target structure with the metrology tool; and communicating the one or more process parameter values to the semiconductor process tool, that causes the semiconductor process tool to adjust one or more process parameters of the semiconductor process tool to achieve a desired target structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method comprising:
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providing illumination radiation to a target structure fabricated on a semiconductor wafer, the illumination radiation provided by an illumination source of a metrology tool; detecting an amount of radiation from the target structure in response to the illumination radiation, the amount of radiation detected by a detector of the metrology tool; generating a measured response associated with the target structure based on the detected radiation, the measured response comprising an amount of measurement data; determining one or more process parameter values characterizing a process employed to generate the target structure based on the amount of measurement data and an integrated measurement model of the target structure, wherein the integrated measurement model is based on a process based target model that constrains values of one or more of the set of geometric parameters characterizing the target structure based on a range of achievable values of one or more fabrication process parameters of the process based target model and a metrology based target model that predicts the measured response based on a model of an interaction of the target structure with the metrology tool; and storing the one or more process parameter values in a memory. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A system comprising:
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an optical metrology tool including an illumination source providing illumination radiation to a target structure fabricated on a semiconductor wafer and a detector detecting an amount of radiation from the target structure in response to the illumination radiation, the optical metrology tool configured to generate a measured response associated with the target structure based on the detected radiation, the measured response comprising an amount of measurement data; and a non-transitory, computer-readable medium, storing instructions that, when executed by one or more processors, cause the one or more processors to; determine a set of parameter values characterizing the target structure based on a fitting of the amount of measurement data to an integrated measurement model of the target structure, wherein the integrated measurement model is based on a process based target model that constrains values of one or more of the set of geometric parameters characterizing the target structure based on one or more fabrication process parameters, of the process based target model by mathematically linking values of one or more parameters of the process based target model to values of one or more of the set of geometric parameters characterizing the target structure and a metrology based target model that predicts the measured response based on a model of an interaction of the target structure with the metrology tool; and store the set of parameter values in a memory. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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27. A system comprising:
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an illumination source of a metrology tool that provides illumination radiation to a target structure fabricated on a semiconductor specimen; a detector of the metrology tool that detects light from the target structure in response to the illumination light and generates a measured spectral response, the measured spectral response comprising an amount of measurement data; a non-transitory, computer-readable medium, storing instructions that, when executed by one or more processors, cause the one or more processors to; determine one or more process parameter values characterizing a process employed to generate the target structure based on the amount of measurement data and an integrated measurement model of the target structure, wherein the integrated measurement model is based on a process based target model that constrains values of one or more of the set of geometric parameters characterizing the target structure based on a range of achievable values of one or more fabrication process parameters of the process based target model and a metrology based target model that predicts the measured response based on a model of an interaction of the target structure with the metrology tool; and store the one or more process parameter values in a memory. - View Dependent Claims (28, 29, 30)
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Specification