Semiconductor device with fin isolation and method of forming the same
First Claim
1. A method, comprising:
- forming a fin strip over a semiconductor substrate using a hardmask, wherein the fin strip comprises a first portion and a second portion laterally adjoining the first portion;
forming a bottom anti-reflective coating (BARC) layer to cover the fin strip over the substrate;
performing a first etching operation to remove a first portion of the BARC layer, so as to expose a portion of the hardmask overlying the second portion of the fin strip;
depositing a coating layer over the portion of the hardmask and the BARC layer;
performing a second etching operation to remove a portion of the coating layer, the portion of the hardmask and a second portion of the BARC layer; and
performing a third etching operation to remove the second portion of the fin strip and a remaining BARC layer, such that the first portion of the fin strip forms a plurality of semiconductor fins.
1 Assignment
0 Petitions
Accused Products
Abstract
A fin strip is formed over a substrate using a hardmask. The fin strip includes a first portion and a second portion laterally adjoining the first portion. A BARC layer is formed to cover the fin strip over the substrate. A first etching operation is performed to remove a first portion of the BARC layer, so as to expose a portion of the hardmask where the first portion of the fin strip underlies. A coating layer is deposited over the portion of the hardmask and the BARC layer. A second etching operation is performed to remove a portion of the coating layer, the portion of the hardmask and a second portion of the BARC layer. A third etching operation is performed to remove the first portion of the fin strip and a remaining BARC layer, such that the second portion of the fin strip forms a plurality of semiconductor fins.
1 Citation
20 Claims
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1. A method, comprising:
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forming a fin strip over a semiconductor substrate using a hardmask, wherein the fin strip comprises a first portion and a second portion laterally adjoining the first portion; forming a bottom anti-reflective coating (BARC) layer to cover the fin strip over the substrate; performing a first etching operation to remove a first portion of the BARC layer, so as to expose a portion of the hardmask overlying the second portion of the fin strip; depositing a coating layer over the portion of the hardmask and the BARC layer; performing a second etching operation to remove a portion of the coating layer, the portion of the hardmask and a second portion of the BARC layer; and performing a third etching operation to remove the second portion of the fin strip and a remaining BARC layer, such that the first portion of the fin strip forms a plurality of semiconductor fins. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method, comprising:
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forming a plurality of fin strips over a semiconductor substrate using a hardmask, thereby forming trenches each of which is disposed between two adjacent ones of the fin strips, wherein each of the fin strips comprises a first portion and a second portion adjoining the first portion along an extending direction of the fin strips, the trenches comprise a first trench and a second trench having a greater width than the first trench; forming a bottom anti-reflective coating (BARC) layer in the trenches to cover the fin strips over the substrate; performing a first etching operation to remove a first portion of the BARC layer over the second portion of the fin strips, so as to expose a portion of the hardmask overlying the second portion of the fin strips, such that a top surface of the BARC layer in the first trench is lower than a top surface of the BARC layer in the second trench; depositing a coating layer over the portion of the hardmask and the BARC layer; performing a second etching operation to remove a portion of the coating layer, the portion of the hardmask and a second portion of the BARC layer; and performing a third etching operation to remove the first portion of each of the fin strips and a remaining BARC layer, such that the second portion of each of the fin strips forms a plurality of semiconductor fins. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method, comprising:
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forming a plurality of fin strips over a semiconductor substrate using a hardmask, wherein each of the fin strips comprises first portions and a second portion sandwiched by the first portions; forming a bottom anti-reflective coating (BARC) layer to cover the fin strips over the substrate, wherein the BARC layer comprises first portions and a second portion sandwiched by the first portions; performing a first etching operation to remove the second portion of the BARC layer, so as to expose portions of the hardmask overlying the second portions of the fin strips; depositing a coating layer over the portions of the hardmask and the first portions of the BARC layer; performing a second etching operation to remove lateral portions of the coating layer, the portions of the hardmask and a second portion of the BARC layer, with remaining vertical portions of the coating layer; and performing a third etching operation to remove the second portions of the fin strips, the vertical portions of the coating layer and a remaining BARC layer, such that the first portions of the fin strips form a plurality of semiconductor fins with end portions. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification