Semiconductor structure and manufacturing method thereof
First Claim
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1. A method of manufacturing a semiconductor structure, comprising:
- removing a first portion of a substrate to form a first recess, wherein the first recess includes a first width and a second width substantially less than the first width;
disposing a first layer over the substrate and along a sidewall of the first recess and a bottom surface of the first recess;
etching the first layer such that a first portion of the first layer disposed over the bottom surface of the first recess is removed and a second portion of the first layer disposed over the sidewall of the first recess is decreased in thickness;
removing a second portion of the substrate exposed from the first layer to form a second recess, wherein a width of the second recess is consistent along a height of the second portion from the first recess;
after removing the second portion of the substrate, removing the first layer; and
depositing a dielectric material in the first recess and the second recess, wherein the depositing includes forming a void at least partially disposed within the first recess and the second recess.
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Abstract
A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.
14 Citations
20 Claims
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1. A method of manufacturing a semiconductor structure, comprising:
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removing a first portion of a substrate to form a first recess, wherein the first recess includes a first width and a second width substantially less than the first width; disposing a first layer over the substrate and along a sidewall of the first recess and a bottom surface of the first recess; etching the first layer such that a first portion of the first layer disposed over the bottom surface of the first recess is removed and a second portion of the first layer disposed over the sidewall of the first recess is decreased in thickness; removing a second portion of the substrate exposed from the first layer to form a second recess, wherein a width of the second recess is consistent along a height of the second portion from the first recess; after removing the second portion of the substrate, removing the first layer; and depositing a dielectric material in the first recess and the second recess, wherein the depositing includes forming a void at least partially disposed within the first recess and the second recess. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of manufacturing a semiconductor structure, comprising:
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removing a first portion of a substrate to form a first recess, the first recess having a first width at a top surface and a second width defined by a bottom surface of the first recess, the first width greater than the second width; depositing a plurality of layers along a sidewall of the first recess and the bottom surface of the first recess; etching the plurality of layers to expose the bottom surface of the first recess; etching the exposed bottom surface of the first recess to form a second recess connected to the first recess and extending into the substrate while the plurality of layers are disposed along the sidewalls of the first recess; and depositing a dielectric material in the first recess and the second recess. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A method of manufacturing a semiconductor structure, comprising:
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removing a first portion of a substrate to form a first recess, the first recess having a first width at a top surface and a second width defined by a bottom surface of the first recess, the first width greater than the second width; depositing a dielectric layer and a mask layer over the dielectric layer along a sidewall of the first recess and the bottom surface of the first recess; etching the dielectric layer and the mask layer to expose a first region of the bottom surface of the first recess, wherein a second region of the bottom surface and a third region of the bottom surface each of the second region and the third region having a first portion covered with the dielectric layer and a second portion covered with the mask layer after the etching, and wherein the first region interposes the second region and the third region; etching the first region of the bottom surface of the first recess to form a second recess connected to the first recess and extending into the substrate while the dielectric layer and the mask layer are disposed on the second region and the third region; removing the dielectric layer and the mask layer along the sidewalls and the second region and third region of the bottom surface of the first recess; and filling the first recess and the second recess with a dielectric material and a void surrounded by the dielectric material, wherein the dielectric material interfaces with the second region and the third region of the bottom surface of the first recess and the void extends from the second recess to above the bottom surface of the first recess. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification