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Semiconductor structure and manufacturing method thereof

  • US 10,784,150 B2
  • Filed: 04/25/2019
  • Issued: 09/22/2020
  • Est. Priority Date: 12/31/2015
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor structure, comprising:

  • removing a first portion of a substrate to form a first recess, wherein the first recess includes a first width and a second width substantially less than the first width;

    disposing a first layer over the substrate and along a sidewall of the first recess and a bottom surface of the first recess;

    etching the first layer such that a first portion of the first layer disposed over the bottom surface of the first recess is removed and a second portion of the first layer disposed over the sidewall of the first recess is decreased in thickness;

    removing a second portion of the substrate exposed from the first layer to form a second recess, wherein a width of the second recess is consistent along a height of the second portion from the first recess;

    after removing the second portion of the substrate, removing the first layer; and

    depositing a dielectric material in the first recess and the second recess, wherein the depositing includes forming a void at least partially disposed within the first recess and the second recess.

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