Apparatus and manufacturing method

• US 10,784,181 B2
• Filed: 02/26/2018
• Issued: 09/22/2020
• Est. Priority Date: 08/27/2015
• Status: Active Grant

• Current Assignee: Huawei Technologies Co., Ltd. (Huawei Investment & Holding Co., Ltd.)
• Original Assignee: Huawei Technologies Co., Ltd. (Huawei Investment & Holding Co., Ltd.)
• Inventors: Fu, HuiLi, Lin, Jyh Rong, Cai, Shujie
• Primary Examiner(s): Chen, Jack S
• Application Number:
  US15/905,044
• Publication Number:
  US 20180190566A1
• Time in Patent Office: 939 Days
• Field of Search: None
• CPC Class Codes: H01L 21/4871 Bases, plates or heatsinks
• CPC Class Codes: H01L 21/4882 Assembly of heatsink parts
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/8384 Sintering
• CPC Class Codes: H01L 23/3672 Foil-like cooling fins or heat sinks being part of lead-frames H01L23/49568
• CPC Class Codes: H01L 23/3733 having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures H01L23/3732, H01L23/3737 take precedence
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/3736 Metallic materials H01L23/3732, H01L23/3733, H01L23/3735, H01L23/3737, H01L23/3738 take precedence
• CPC Class Codes: H01L 23/42 Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/16152 Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Abstract

An apparatus includes a circuit device, a heat sink fin, and a thermal interface material layer. The thermal interface material layer is thermally coupled to the circuit device and the heat sink fin. The thermal interface material layer includes a first alloy layer, a nanometal particle layer, and a second alloy layer. The first alloy layer is thermally coupled to the circuit device. The nanometal particle layer is thermally coupled to the first alloy layer. The nanometal particle layer includes nanometal particles and an intermediate mixture.

Claims

1. An apparatus, comprising:

a circuit device;

a heat sink fin; and

a thermal interface material layer, wherein the thermal interface material layer is thermally coupled to the circuit device and the heat sink fin and comprises;

a first alloy layer thermally coupled to the circuit device;

a nanometal particle layer thermally coupled to the first alloy layer, wherein the nanometal particle layer comprises a plurality of nanometal particles that are coupled to each other and an intermediate mixture, and wherein the intermediate mixture is filled with the nanometal particles; and

a second alloy layer thermally coupled to the nanometal particle layer and the heat sink fin, wherein the second alloy layer comprises;

a second adhesive layer thermally coupled to the heat sink fin;

a second co-sintered layer thermally coupled to the nanometal particle layer, wherein a sintered continuous phase structure is formed at a contact portion between the second co-sintered layer and the nanometal particle layer, and

a second buffer layer located between the second adhesive layer and the second co-sintered layer.

2. The apparatus according to claim 1, wherein a second sintered continuous phase structure is formed at a contact portion between the first alloy layer and the nanometal particle layer, wherein sintered continuous phase structures are formed at contact portions among the nanometal particles.

3. The apparatus according to claim 1, wherein the nanometal particles comprise silver.

4. The apparatus according to claim 1, wherein diameters of the nanometal particles are between 50 nanometers (nm) and 200 nm.

5. The apparatus according to claim 1, wherein the apparatus is applied to a flip chip ball grid array structure.

6. The apparatus according to claim 1, wherein the first alloy layer comprises a first adhesive layer and a first co-sintered layer, wherein the first adhesive layer is thermally coupled to the circuit device, wherein the first co-sintered layer is coupled to the nanometal particle layer, and wherein another sintered continuous phase structure is formed at a contact portion between the first co-sintered layer and the nanometal particle layer.

7. The apparatus according to claim 6, wherein the first adhesive layer comprises at one of titanium, chromium, nickel, or a nickel-vanadium alloy, and wherein the first co-sintered layer comprises at least one of silver, gold, or copper.

8. The apparatus according to claim 6, wherein the first alloy layer further comprises a first buffer layer located between the first adhesive layer and the first co-sintered layer, and wherein the first buffer layer comprises at least one of aluminum, copper, nickel, or a nickel-vanadium alloy.

9. The apparatus according to claim 1, wherein the second adhesive layer comprises at least one of titanium, chromium, nickel, or a nickel-vanadium alloy, and wherein the second co-sintered layer comprises at least one of silver, gold, or copper.

10. The apparatus according to claim 1, wherein the second buffer layer comprises at least one of aluminum, copper, nickel, or a nickel-vanadium alloy.

11. The apparatus according to claim 1, wherein the intermediate mixture comprises at least one of air or resin.

12. The apparatus according to claim 1, wherein the circuit device comprises an integrated circuit die, and wherein a substrate of the integrated circuit die is thermally coupled to thermal interface material layer.

13. An apparatus, comprising:

a heat sink fin; and

a thermal interface material layer, wherein the thermal interface material layer is thermally coupled to the heat sink fin and comprises;

a first alloy layer;

a nanometal particle layer thermally coupled to the first alloy layer, wherein the nanometal particle layer comprises a plurality of nanometal particles that are coupled to each other and an intermediate mixture, and wherein the intermediate mixture is filled with the nanometal particles; and

a second alloy layer thermally coupled to the nanometal particle layer and the heat sink fin, wherein the second alloy layer comprises;

a second adhesive layer thermally coupled to the heat sink fin;

a second co-sintered layer thermally coupled to the nanometal particle layer, wherein a sintered continuous phase structure is formed at a contact portion between the second co-sintered layer and the nanometal particle layer; and

a second buffer layer located between the second adhesive layer and the second co-sintered layer.

14. The apparatus according to claim 13, wherein a second sintered continuous phase structure is formed at a contact portion between the first alloy layer and the nanometal particle layer, wherein the second sintered continuous phase structures are formed at contact portions among the nanometal particles.

15. The apparatus according to claim 13, wherein the nanometal particles comprise silver.

16. The apparatus according to claim 13, wherein diameters of the nanometal particles are between 50 nanometers (nm) and 200 nm.

17. The apparatus according to claim 13, wherein the apparatus is applied to a flip chip ball grid array structure.

18. The apparatus according to claim 13, wherein the first alloy layer comprises a first adhesive layer and a first co-sintered layer, wherein the first co-sintered layer is coupled to the nanometal particle layer, and wherein another sintered continuous phase structure is formed at a contact portion between the first co-sintered layer and the nanometal particle layer.

19. The apparatus according to claim 18, wherein the first adhesive layer comprises at least one of titanium, chromium, nickel, or a nickel-vanadium alloy, and wherein the first co-sintered layer comprises at least one of silver, gold, or copper.