Photoelectric conversion apparatus and equipment
First Claim
1. A photoelectric conversion apparatus comprising:
- a semiconductor layer that includes a photoelectric conversion portion, a charge holding portion which holds electric charge generated by the photoelectric conversion portion, and a charge detection portion to which the electric charge held by the charge holding portion is transferred;
a gate electrode of a transistor, which is disposed on the semiconductor layer;
an insulator film that covers the semiconductor layer and has a contact hole positioned above the gate electrode;
a contact plug that is disposed in the contact hole and connected to the gate electrode, the contact plug being arranged so as to overlap the gate electrode in a plan view;
a light-shielding film that is positioned between an upper surface of the insulator film and an upper surface of the semiconductor layer and includes a first part covering the charge holding portion and a second part covering the gate electrode; and
a dielectric layer that is positioned between the second part and the gate electrode, whereina relative dielectric constant of the dielectric layer is lower than a relative dielectric constant of the insulator film.
1 Assignment
0 Petitions
Accused Products
Abstract
Provided is a photoelectric conversion apparatus including: an interlayer insulating film that covers a semiconductor layer and has a contact hole positioned above a gate electrode; a contact plug that is disposed in the contact hole and connected to the gate electrode; a light-shielding film that is positioned between the interlayer insulating film and the semiconductor layer and includes a first part covering a charge holding portion and a second part covering an upper surface of the gate electrode; and a dielectric layer that is positioned between the second part and the gate electrode, in which a relative dielectric constant of the dielectric layer is lower than a relative dielectric constant of the interlayer insulating film.
5 Citations
23 Claims
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1. A photoelectric conversion apparatus comprising:
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a semiconductor layer that includes a photoelectric conversion portion, a charge holding portion which holds electric charge generated by the photoelectric conversion portion, and a charge detection portion to which the electric charge held by the charge holding portion is transferred; a gate electrode of a transistor, which is disposed on the semiconductor layer; an insulator film that covers the semiconductor layer and has a contact hole positioned above the gate electrode; a contact plug that is disposed in the contact hole and connected to the gate electrode, the contact plug being arranged so as to overlap the gate electrode in a plan view; a light-shielding film that is positioned between an upper surface of the insulator film and an upper surface of the semiconductor layer and includes a first part covering the charge holding portion and a second part covering the gate electrode; and a dielectric layer that is positioned between the second part and the gate electrode, wherein a relative dielectric constant of the dielectric layer is lower than a relative dielectric constant of the insulator film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A photoelectric conversion apparatus comprising:
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a semiconductor layer that includes a photoelectric conversion portion, a charge holding portion which holds electric charge generated by the photoelectric conversion portion, and a charge detection portion to which the electric charge held by the charge holding portion is transferred; a gate electrode of a transistor, which is disposed on the semiconductor layer; a light-shielding film that is positioned between an upper surface of an insulator film and an upper surface of the semiconductor layer and includes a first part covering the charge holding portion and a second part covering the gate electrode; a contact plug that is connected to the gate electrode and that is arranged so as to overlap the gate electrode in a plan view; and a dielectric layer that is positioned between the second part and the gate electrode, wherein the dielectric layer is formed of a low-k material. - View Dependent Claims (20)
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21. A photoelectric conversion apparatus comprising:
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a semiconductor layer that includes a photoelectric conversion portion, a charge holding portion which holds electric charge generated by the photoelectric conversion portion, and a charge detection portion to which the electric charge held by the charge holding portion is transferred; a gate electrode of a transistor, which is disposed on the semiconductor layer; an insulator film that covers the semiconductor layer and has a contact hole positioned above the gate electrode; a contact plug that is disposed in the contact hole and connected to the gate electrode, the contact plug being arranged so as to overlap the gate electrode in a plan view; a light-shielding film that is positioned between an upper surface of the insulator film and an upper surface of the semiconductor layer and includes a first part covering the charge holding portion and a second part covering the gate electrode; and a dielectric layer that is positioned between the second part and the gate electrode, wherein the insulator film includes Si and O, and at least one of B and P, and the dielectric layer includes Si and O, and at least one of C and F. - View Dependent Claims (22, 23)
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Specification