Non-color shifting multilayer structures

• US 10,788,608 B2
• Filed: 04/01/2014
• Issued: 09/29/2020
• Est. Priority Date: 08/12/2007
• Status: Active Grant

• Current Assignee: Toyota Jidosha Kabushiki Kaisha (Toyota Motor Corporation)
• Original Assignee: Toyota Jidosha Kabushiki Kaisha (Toyota Motor Corporation)
• Inventors: Banerjee, Debasish, Zhang, Minjuan, Ishii, Masahiko
• Primary Examiner(s): Chang, Audrey Y
• Application Number:
  US14/242,429
• Publication Number:
  US 20140211303A1
• Time in Patent Office: 2,373 Days
• Field of Search: 359584, 359586, 359588, 359589, 359359, 359585, 428212, 428403
• CPC Class Codes: G02B 5/085 at least one of the reflecting layers comprising metal
• CPC Class Codes: G02B 5/0858 the reflecting layers comprising a single metallic layer with one or more dielectric layers
• CPC Class Codes: G02B 5/26 Reflecting filters G02B5/28 takes precedence
• CPC Class Codes: G02B 5/285 comprising deposited thin solid films G02B5/281 - G02B5/289 take precedence; multilayered film filters for fibre optic multiplexing G02B6/29361
• CPC Class Codes: G02B 5/286 having four or fewer layers, e.g. for achieving a colour effect

Abstract

An omnidirectional multilayer thin film is provided. The multilayer thin film includes a multilayer stack having a first layer of a first material and a second layer of a second material, the second layer extending across the first layer. The multilayer stack reflects a narrow band of electromagnetic radiation having a full width at half maximum (FWHM) of less than 300 nanometers (nm) and a color/hue shift of less than 30 degrees when the multilayer stack is exposed to broadband electromagnetic radiation and viewed from angles between 0 and 45 degrees. In some instances, the multilayer stack has a total thickness of less than 2 microns (μm). Preferably, the multilayer thin film has a total thickness of less than 1.5 μm and more preferably less than 1.0 μm.

Claims

1. An omnidirectional structural color multilayer thin film comprising:

a multilayer stack having a reflector layer, a dielectric layer extending over said reflector layer, an absorber layer extending over said dielectric layer and an outer dielectric layer extending over the absorber layer, said outer dielectric layer made from a dielectric material selected from the group consisting of ZnS and MgF₂;

said multilayer stack reflecting a band of visible electromagnetic radiation having a predetermined full width at half maximum (FWHM) of less than 200 nm and a predetermined color shift in the form of a hue shift of less than 30°

on an a*b* color map when said multilayer stack is exposed to broadband electromagnetic radiation and viewed from angles between 0 and 45°

.

2. The multilayer thin film of claim 1, wherein said multilayer stack has a total thickness of less than 2 μ

m.

3. The multilayer thin film of claim 2, wherein said total thickness of said multilayer stack is less than 1.5 μ

m.

4. The multilayer thin film of claim 3, wherein said total thickness of said multilayer stack is less than 1.0 μ

m.

5. The multilayer thin film of claim 1, wherein said color shift in the form of the hue shift of said reflected narrow band of visible electromagnetic radiation is less than 25°

on the a*b* color map when said multilayer stack is exposed to broadband electromagnetic radiation and viewed from angles between 0 and 45°

.

6. The multilayer thin film of claim 1, wherein said dielectric layer has a thickness between 30-300 nm.

7. The multilayer thin film of claim 1, wherein said absorber layer is a selective absorber layer.

8. The multilayer thin film of claim 7, wherein said selective absorber layer is made from a material selected from the group consisting of Cu, Au, Zn, Sn, amorphous Si, crystalline Si and alloys thereof.

9. The multilayer thin film of claim 7, wherein said selective absorber layer is made from a material selected from the group consisting of Fe₂O₃, Cu₂O, amorphous Si, crystalline Si and combinations thereof.

10. The multilayer thin film of claim 7, wherein said absorber layer has a thickness between 20-80 nm.

11. The multilayer thin film of claim 1, wherein said absorber layer is a non-selective absorber layer.

12. The multilayer thin film of claim 11, wherein said non-selective absorber layer is made from a material selected from a group consisting of Cr, Ta, W, Mo, Ti, Ti-nitride, Nb, Co, Si, Ge, Ni, Pd, V, ferric oxide, amorphous Si, crystalline Si and combinations or alloys thereof.

13. The multilayer thin film of claim 11, wherein said non-selective absorber layer has a thickness between 5-30 nm.

14. The multilayer thin film of claim 1, further comprising said multilayer stack reflecting a band of electromagnetic radiation in the UV range.

15. The multilayer thin film of claim 1, further comprising said multilayer stack reflecting a band of electromagnetic radiation in the IR range.

16. The multilayer thin film of claim 1, wherein said reflector layer is made from a metal selected from the group consisting of Al, Ag, Pt, Cr, Cu, Zn, Au, Sn, amorphous Si, crystalline Si and alloys thereof.

17. The multilayer thin film of claim 16, wherein said reflector layer has a thickness between 50-200 nm.

18. The multilayer thin film of claim 1, wherein said reflected narrow band of visible electromagnetic radiation has a symmetrical peak within a visible spectrum of electromagnetic radiation.

19. The multilayer thin film of claim 1, wherein said reflected narrow band of visible electromagnetic radiation is bounded by a UV range of electromagnetic radiation.

20. The multilayer thin film of claim 1, wherein said reflected narrow band of visible electromagnetic radiation is bounded by an IR range of electromagnetic radiation.