Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same

• US 10,795,261 B2
• Filed: 11/08/2016
• Issued: 10/06/2020
• Est. Priority Date: 11/17/2015
• Status: Active Grant

• Current Assignee: Nissan Chemical Industries Limited (Shin-Etsu Chemical Company Limited)
• Original Assignee: Nissan Chemical Industries Limited (Shin-Etsu Chemical Company Limited)
• Inventors: Nishita, Tokio, Sakamoto, Rikimaru
• Primary Examiner(s): Hamilton, Cynthia
• Application Number:
  US15/774,321
• Publication Number:
  US 20190317405A1
• Time in Patent Office: 1,428 Days
• CPC Class Codes: C08F 220/1811 C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
• CPC Class Codes: C08F 220/20 of polyhydric alcohols or phenols , e.g. 2-hydroxyethyl (meth)acrylate or glycerol mono-(meth)acrylate
• CPC Class Codes: C08F 220/22 Esters containing halogen
• CPC Class Codes: C08F 220/343 in the form of urethane links
• CPC Class Codes: C08F 220/36 containing oxygen in addition to the carboxy oxygen , e.g. 2-N-morpholinoethyl (meth)acrylate or 2-isocyanatoethyl (meth)acrylate
• CPC Class Codes: C08F 220/382 and containing oxygen, e.g. 2-sulfoethyl (meth)acrylate
• CPC Class Codes: C08G 63/181 Acids containing aromatic rings
• CPC Class Codes: C08L 33/14 of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
• CPC Class Codes: C09D 167/03 the dicarboxylic acids and dihydroxy compounds having the carboxyl - and the hydroxy groups directly linked to aromatic rings
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: G03F 7/162 Coating on a rotating support, e.g. using a whirler or a spinner
• CPC Class Codes: G03F 7/168 Finishing the coated layer, e.g. drying, baking, soaking
• CPC Class Codes: G03F 7/2004 characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
• CPC Class Codes: G03F 7/2006 using coherent light; using polarised light
• CPC Class Codes: G03F 7/322 Aqueous alkaline compositions
• CPC Class Codes: G03F 7/38 Treatment before imagewise removal, e.g. prebaking G03F7/265 takes precedence

Abstract

An additive for a resist underlayer film-forming composition, including a copolymer having structural units of the following Formulae (1) to (3):

wherein R¹s are each independently a hydrogen atom or a methyl group, R² is a C_1-3 alkylene group, A is a protecting group, R³ is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, tricyclodecane skeleton, or norbornane skeleton, and R⁴ is a linear, branched, or cyclic organic group having a carbon atom number of 1 to 12, wherein at least one hydrogen atom is substituted with a fluoro group and that optionally has at least one hydroxy group as a substituent. A resist underlayer film-forming composition for lithography including additive, a resin that is different from copolymer, organic acid, crosslinker, and solvent, wherein the copolymer'"'"'s content is 3 parts by mass to 40 parts by mass relative to 100 parts by mass of the resin.

Claims

1. An additive for a resist underlayer film-forming composition, comprising a copolymer having structural units of the following Formulae (1) to (3):

2. The additive for a resist underlayer film-forming composition according to claim 1, wherein the structural unit of Formula (4) is a structural unit of the following Formula (4a) or (4b):

3. The additive for a resist underlayer film-forming composition according to claim 1, wherein the structural unit of Formula (1) is a structural unit of the following Formula (1a), (1b), (1c), or (1d):

4. The additive for a resist underlayer film-forming composition according to claim 1, wherein the copolymer has a weight average molecular weight of 1,500 to 20,000.

5. An additive for a resist underlayer film-forming composition, comprising a copolymer having structural units of the following Formulae (1), (3) and (5):

6. A resist underlayer film-forming composition for lithography comprising

an additive for a resist underlayer film-forming composition comprising a copolymer having structural units of the following Formulae (1) to (3):

7. A method for forming a resist pattern comprising the steps of:

applying the resist underlayer film-forming composition for lithography according to claim 6 to a substrate, followed by baking, to form a resist underlayer film having a thickness of 1 nm to 25 nm;

applying a resist solution to the resist underlayer film, followed by heating, to form a resist film;

exposing the resist film with a photomask to radiation selected from the group consisting of a KrF excimer laser, an ArF excimer laser, and extreme ultraviolet light; and

developing the exposed resist film by using a developer.