Methods of forming backside self-aligned vias and structures formed thereby
First Claim
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1. A microelectronic device structure, comprising:
- a fin of monocrystalline semiconductor material over a dielectric materiala gate electrode adjacent to the fin;
a drain region adjacent to the fin;
a first contact to the drain region, the first contact adjacent to the gate electrode;
a source region adjacent to the fin, and opposite the drain region;
a second contact to the source region, the second contact adjacent to the gate electrode; and
a third contact adjacent to the dielectric material, and in contact with the source region or the drain region, wherein the third contact is opposite the first contact or the second contact.
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Abstract
Methods and structures formed thereby are described, of forming self-aligned contact structures for microelectronic devices. An embodiment includes forming a trench in a source/drain region of a transistor device disposed in a device layer, wherein the device layer is on a substrate, forming a fill material in the trench, forming a source/drain material on the fill material, forming a first source/drain contact on a first side of the source/drain material, and then forming a second source drain contact on a second side of the source/drain material.
44 Citations
20 Claims
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1. A microelectronic device structure, comprising:
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a fin of monocrystalline semiconductor material over a dielectric material a gate electrode adjacent to the fin; a drain region adjacent to the fin; a first contact to the drain region, the first contact adjacent to the gate electrode; a source region adjacent to the fin, and opposite the drain region; a second contact to the source region, the second contact adjacent to the gate electrode; and a third contact adjacent to the dielectric material, and in contact with the source region or the drain region, wherein the third contact is opposite the first contact or the second contact. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A microelectronic device structure, comprising:
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a first transistor, comprising; a first fin of monocrystalline semiconductor material, the first fin over a dielectric material a first gate electrode adjacent to a sidewall of the first fin; a first source/drain region adjacent to the first fin; a first contact to the first source/drain region, the first contact adjacent to the first gate electrode; a second source/drain region adjacent to the first fin; a second contact to the second source/drain region, the second contact adjacent to the first gate electrode; and a third contact adjacent to the dielectric material, and in contact with the first source/drain region, opposite the first source/drain region; and a second transistor, comprising; a second fin of the monocrystalline semiconductor material, the second fin over the dielectric material; a second gate electrode adjacent to the second fin; a third source/drain region adjacent to the fin; a fourth contact to the third source/drain region, the fourth contact adjacent to the second gate electrode; a fourth source/drain region adjacent to the fin; a fifth contact to the fourth source/drain region, the fifth contact adjacent to the second gate electrode; and a sixth contact adjacent to the dielectric material, and in contact with the fourth source/drain region, opposite the fourth source/drain region, wherein the third contact is separated from the sixth contact by the dielectric material. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method of forming a microelectronic structure, the method comprising:
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forming a gate electrode over a sidewall of a fin, the fin comprising a monocrystalline semiconductor material; forming a trench adjacent to the gate electrode to a depth below the gate electrode; forming a first contact within the trench; forming a source/drain region in contact with the fin and over the first contact; forming a second contact to the source/drain region, the second contact opposite the first contact, and adjacent to the gate electrode. - View Dependent Claims (17, 18, 19, 20)
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Specification