Manufacturing method for IGZO active layer and oxide thin film transistor

• US 10,797,166 B2
• Filed: 11/28/2018
• Issued: 10/06/2020
• Est. Priority Date: 04/03/2018
• Status: Active Grant

• Current Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
• Original Assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
• Inventors: Wu, Yue, Wu, Wei
• Primary Examiner(s): Sabur, Alia
• Application Number:
  US16/203,159
• Publication Number:
  US 20190305116A1
• Time in Patent Office: 678 Days
• CPC Class Codes: H01L 21/02046 Dry cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/02472 Oxides
• CPC Class Codes: H01L 21/02483 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02661 In-situ cleaning
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A manufacturing method for an IGZO active layer is disclosed. The method comprises steps of: after depositing a first metal layer and a gate insulation layer on a substrate, depositing an IGZO material on the gate insulation layer, and forming an IGZO film; and performing a plasma cleaning treatment on a surface of the IGZO film by using an argon gas or a helium gas to adjust element contents on the surface of the IGZO film, and forming an IGZO active layer. The present invention also correspondingly discloses a manufacturing method for an oxide thin film transistor. By implementing the embodiments of the present invention, the elements on the film surface of the IGZO active layer can be adjusted to improve electrical properties.

Claims

1. A manufacturing method for an IGZO active layer, comprising steps of:

after depositing a first metal layer and a gate insulation layer on a substrate, depositing an IGZO material on the gate insulation layer, and forming an IGZO film; and

performing a plasma cleaning treatment on a surface of the IGZO film by using an argon gas or a helium gas to adjust element contents on the surface of the IGZO film to form an IGZO active layer;

wherein the plasma cleaning treatment uses a power of 3000˜

4000 watts;

a gas pressure of 30˜

50 mTorr;

a gas flow rate of 500˜

1000 standard milliliter/min, and a processing time of 5˜

20 seconds.

2. The manufacturing method according to claim 1, wherein the method further includes a step of:

photoresist coating, exposing, developing, and etching the surface of the IGZO film after the plasma cleaning treatment in order to complete an IGZO patterning in order to form the IGZO active layer.

3. A manufacturing method for an oxide thin film transistor, comprising steps of:

providing a substrate, and depositing a first metal layer on the substrate to form a gate electrode;

depositing a gate insulation layer on the first metal layer;

depositing an IGZO material on the gate insulation layer to form an IGZO film, and performing a plasma cleaning treatment on a surface of the IGZO film by using an argon gas or a helium gas to form an IGZO active layer; and

depositing a second metal layer on the IGZO active layer and etching the second metal layer to form a source electrode and a drain electrode;

wherein the step of performing plasma cleaning treatment on a surface of the IGZO film by using an argon gas or a helium gas includes a step of;

performing a plasma cleaning treatment to a film surface of the IGZO active layer using the argon gas or the helium gas, wherein a power adopted in the plasma cleaning treatment is 1000˜

6000 watts;

a gas pressure is 30˜

70 mTorr, and the gas flow rate is 200˜

2000 standard milliliter/min;

a processing time is 0˜

120 seconds.

4. The manufacturing method according to claim 3, wherein the step of depositing an IGZO material on the gate insulation layer to form an IGZO film, and performing a plasma cleaning treatment on a surface of the IGZO film by using an argon gas or a helium gas to form an IGZO active layer comprises steps of:

depositing an IGZO material on the gate insulation layer by physical vapor deposition to form the IGZO film;

performing the plasma cleaning treatment to the surface of the IGZO film by the argon gas or the helium gas; and

photoresist coating, exposing, developing, and etching the surface of the IGZO film after performing the plasma cleaning treatment to the IGZO film in order to complete an IGZO patterning to form the IGZO active layer.

5. The manufacturing method according to claim 3, wherein the step of depositing an IGZO material on the gate insulation layer to form an IGZO film, and performing a plasma cleaning treatment on a surface of the IGZO film by using an argon gas or a helium gas to form an IGZO active layer comprises steps of:

depositing an IGZO material on the gate insulation layer by physical vapor deposition to form the IGZO film; and

performing the plasma cleaning treatment to the surface of the IGZO film by the argon gas or the helium gas in order to form the IGZO active layer.

6. The manufacturing method according to claim 5, wherein the step of depositing a second metal layer on the IGZO active layer and etching the second metal layer to form a gate electrode and a drain electrode comprises steps of:

depositing a second metal layer on the IGZO active layer;

coating a photoresist on the second metal layer;

etching a peripheral of the second metal layer and the IGZO film; and

thinning the photoresist, and through a wet etching to form the gate electrode and the drain electrode on the second metal layer.