Silicene electronic device
First Claim
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1. A silicene electronic device comprising:
- a silicene material layer having a two-dimensional (2D) honeycomb structure formed by silicon atoms, doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and comprises at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant; and
an electrode material layer on the silicene material layer and includes a material having a work function lower than an electron affinity of silicene,wherein the electrode material layer comprises an electride.
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Abstract
A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.
7 Citations
19 Claims
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1. A silicene electronic device comprising:
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a silicene material layer having a two-dimensional (2D) honeycomb structure formed by silicon atoms, doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and comprises at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant; and an electrode material layer on the silicene material layer and includes a material having a work function lower than an electron affinity of silicene, wherein the electrode material layer comprises an electride. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A silicene electronic device comprising:
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a silicene material layer having a two-dimensional (2D) honeycomb structure formed by silicon atoms, doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and comprises at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant; and an electrode material layer on the silicene material layer and includes a material having a work function lower than an electron affinity of silicene, wherein the electrode material layer comprises at least one material selected from the group consisting of Ca, Y, La, and Er.
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14. A silicene electronic device comprising:
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a silicene material layer having a two-dimensional (2D) honeycomb structure formed by silicon atoms, doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and comprises at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant; an electrode material layer on the silicene material layer and includes a material having a work function lower than an electron affinity of silicene; and
an intermediate layer between the silicene material layer and the electrode material layer. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification