Memory devices having source lines directly coupled to body regions and methods

  • US 10,825,528 B2
  • Filed: 05/22/2018
  • Issued: 11/03/2020
  • Est. Priority Date: 01/21/2011
  • Status: Active Grant
First Claim
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1. A memory device, comprising:

  • a continuous elongated body region of the same conductivity type, having a source region coupled to a first end, and a drain region coupled to a second end;

    a plurality of gates along a length of the elongated body region, each of the plurality of gates being separated from the elongated body region by at least a charge storage structure; and

    a source line coupled to the body region by a via passing though the source region.

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