Arrangements for magnetic field sensors that act as movement detectors

• US 10,837,800 B2
• Filed: 04/04/2018
• Issued: 11/17/2020
• Est. Priority Date: 06/08/2016
• Status: Active Grant

• Current Assignee: Allegro Microsystems Incorporated (Sanken Electric Company Limited)
• Original Assignee: Allegro Microsystems Incorporated (Sanken Electric Company Limited)
• Inventors: Vig, Ravi, David, Paul A., Shoemaker, Eric G.
• Primary Examiner(s): Assouad, Patrick
• Assistant Examiner(s): Pretlow, Demetrius R
• Application Number:
  US15/945,085
• Publication Number:
  US 20180224300A1
• Time in Patent Office: 958 Days
• Field of Search: 3242072, 32420721, 32420724, 32420725, 324160-180
• CPC Class Codes: G01D 5/142 using Hall-effect devices measuring magnetic variables using Hall-effect or other galvanomagnetic devices G01R33/06
• CPC Class Codes: G01D 5/147 influenced by the movement of a third element, the position of Hall device and the source of magnetic field being fixed in respect to each other

Abstract

Magnetic field sensors can sense speed of movement and direction of movement of a ferromagnetic object. The magnetic field sensors employ both planar Hall effect elements and vertical Hall effect elements to generate two-state signals in two different signal paths with relative phases that are ninety degrees apart, the ninety degrees having sufficient margin to aid in detection of the direction of motion. Other magnetic field sensors use at least four vertical Hall effect elements to identify a speed of rotation and a direction of rotation of a moving ferromagnetic object.

Claims

1. A magnetic field sensor for sensing a movement of an object, the magnetic field sensor comprising:

a magnet;

a semiconductor substrate disposed proximate to the magnet in a back biased arrangement, the semiconductor substrate having first and second major opposing surfaces;

a first magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a second magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a first electronic circuit channel coupled to the first magnetic field sensing element, the first electronic circuit channel operable to generate a first signal having a first phase; and

a second electronic circuit channel coupled to the second magnetic field sensing element, the second electronic circuit channel operable to generate a second signal having a second phase approximately +/−

ninety degrees apart from the first phase regardless of a speed of the movement of the object, wherein a sign of the ninety degrees is indicative of a direction of the movement of the object.

2. The magnetic field sensor of claim 1, wherein the first magnetic field sensing element comprises an axis of maximum sensitivity substantially perpendicular to the first opposing surface of the substrate, and wherein the second magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate.

3. The magnetic field sensor of claim 1, wherein the first magnetic field sensing element comprises a planar Hall effect element and the second magnetic field sensing element comprises a vertical Hall effect element.

4. The magnetic field sensor of claim 1, wherein the first magnetic field sensing element comprises a planar Hall effect element and the second magnetic field sensing element comprises a magnetoresistance element.

5. The magnetic field sensor of claim 1, wherein a center of the first magnetic field sensing element is disposed along a first orthogonal axis, wherein a center of second magnetic field sensing element is disposed along the first orthogonal axis or along a second orthogonal axis perpendicular to the first orthogonal axis.

6. The magnetic field sensor of claim 1, wherein the first magnetic field sensing element is not disposed over or under the second magnetic field sensing element relative to the first surface of the semiconductor substrate.

7. A magnetic field sensor for sensing a movement of an object, the magnetic field sensor comprising:

a magnet;

a semiconductor substrate disposed proximate to the magnet in a back biased arrangement, the semiconductor substrate having first and second major opposing surfaces;

a first magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a second magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a third magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a fourth magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a first electronic circuit channel coupled to the first magnetic field sensing element and to the third magnetic field sensing element, the first electronic circuit channel operable to generate a first difference signal as a difference of signals generated by the first magnetic field sensing element and the third magnetic field sensing element, the first electronic circuit channel operable to generate the first difference signal having a first phase; and

a second electronic circuit channel coupled to the second magnetic field sensing element and to the fourth magnetic field sensing element, the second electronic circuit channel operable to generate a second difference signal as a difference of signals generated by the second magnetic field sensing element and the fourth magnetic field sensing element, the second electronic circuit channel operable to generate the second difference signal having a second phase approximately +/−

ninety degrees apart from the first phase regardless of a speed of the movement of the object, wherein a sign of the ninety degrees is indicative of a direction of the movement of the object.

8. The magnetic field sensor of claim 7, wherein the first and third magnetic field sensing elements comprise planar Hall effect elements and the second and fourth magnetic field sensing elements comprise vertical Hall effect elements.

9. The magnetic field sensor of claim 7, wherein the first and third magnetic field sensing elements comprise planar Hall effect elements and the second and fourth magnetic field sensing elements comprise magnetoresistance elements.

10. The magnetic field sensor of claim 7, wherein centers of the first and third magnetic field sensing elements are equidistant from the substrate point.

11. The magnetic field sensor of claim 10, wherein the centers of second and fourth magnetic field sensing elements are equidistant from the substrate point.

12. The magnetic field sensor of claim 7, wherein the first magnetic field sensing element comprises an axis of maximum sensitivity substantially perpendicular to the first opposing surface of the substrate, wherein the second magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate, wherein the third magnetic field sensing element comprises an axis of maximum sensitivity substantially perpendicular to the first opposing surface of the substrate, and wherein the fourth magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate.

13. The magnetic field sensor of claim 7, wherein the axes of maximum sensitivity of the second and fourth magnetic field sensing elements are substantially parallel to a first orthogonal axis, the magnetic field sensor further comprising:

a fifth magnetic field sensing element, disposed on the first surface of the semiconductor substrate, wherein the fifth magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate and substantially parallel to a second orthogonal axis perpendicular to the first orthogonal axis; and

a sixth magnetic field sensing element disposed on the first surface of the semiconductor substrate, wherein the sixth magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate and substantially parallel to the second orthogonal axis.

14. The magnetic field sensor of claim 13, wherein the first and third magnetic field sensing elements comprise planar Hall effect elements and the second, fourth, fifth, and sixth magnetic field sensing elements comprise magnetoresistance elements.

15. The magnetic field sensor of claim 13, wherein the first and third magnetic field sensing elements comprise planar Hall effect elements and the second, fourth, fifth, and sixth magnetic field sensing elements comprise vertical Hall effect elements.

16. The magnetic field sensor of claim 13, wherein centers of the first and third magnetic field sensing elements are disposed along the first orthogonal axis and equidistant from the substrate point.

17. The magnetic field sensor of claim 16, wherein the centers of second and fourth magnetic field sensing elements are disposed along the first orthogonal axis and equidistant from the substrate point.

18. The magnetic field sensor of claim 16, wherein the centers of fifth and sixth magnetic field sensing elements are disposed along the second orthogonal axis and equidistant from the substrate point.

19. The magnetic field sensor of claim 13, wherein directions of the axes of maximum sensitivities of the second, fourth, fifth and sixth magnetic field sensing elements are selected such that the second magnetic field sensing element and the fourth magnetic field sensing elements have greater responses to the movement of the object along the path than the fifth magnetic field sensing element and the sixth magnetic field sensing element.

20. The magnetic field sensor of claim 13, wherein

the first electronic circuit channel is coupled to the first magnetic field sensing element and to the third magnetic field sensing element, the first electronic circuit channel operable to generate a first difference signal as a difference of signals generated by the first magnetic field sensing element and the third magnetic field sensing element, the first electronic circuit channel operable to generate the first difference signal having a first phase, and wherein

the second electronic circuit channel is coupled to the second magnetic field sensing element, to the fourth magnetic field sensing element, to the fifth magnetic field sensing element, and to the sixth magnetic field sensing element, the second electronic circuit channel operable to generate a second difference signal as a difference of signals generated by the second magnetic field sensing element and the fifth magnetic field sensing element, the second electronic circuit channel operable to generate a third difference signal as a difference of signals generated by the fourth magnetic field sensing element and the sixth magnetic field sensing element, and wherein the second electronic circuit channel is operable to generate a fourth difference signal as a difference between the second difference signal and the third difference signal, the second electronic circuit channel operable to generate the fourth difference signal having a second phase approximately +/−

ninety degrees apart from the first phase, wherein a sign of the ninety degrees is indicative of a direction of the movement of the object.

21. The magnetic field sensor of claim 7, wherein the first and third magnetic field sensing elements comprise respective axes of maximum sensitivity substantially perpendicular to the first opposing surface of the substrate, and wherein the second and fourth magnetic field sensing elements comprise respective axes of maximum sensitivity substantially parallel to the first opposing surface of the substrate.

22. A magnetic field sensor for sensing a movement of an object, the magnetic field sensor comprising:

a semiconductor substrate, the semiconductor substrate having first and second major opposing surfaces;

a first magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a second magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a third magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a fourth magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a first electronic circuit channel coupled to the first magnetic field sensing element and to the third magnetic field sensing element, the first electronic circuit channel operable to generate a first difference signal as a difference of signals generated by the first magnetic field sensing element and the third magnetic field sensing element, the first electronic circuit channel operable to generate the first difference signal having a first phase; and

a second electronic circuit channel coupled to the second magnetic field sensing element and to the fourth magnetic field sensing element, the second electronic circuit channel operable to generate a second difference signal as a difference of signals generated by the second magnetic field sensing element and the fourth magnetic field sensing element, the second electronic circuit channel operable to generate the second difference signal having a second phase approximately +/−

ninety degrees apart from the first phase regardless of a speed of the movement of the object, wherein a sign of the ninety degrees is indicative of a direction of the movement of the object, wherein the first and third magnetic field sensing elements comprise planar Hall effect elements and the second and fourth magnetic field sensing elements comprise vertical Hall effect elements or magnetoresistance elements.

23. A magnetic field sensor for sensing a movement of an object, the magnetic field sensor comprising:

a semiconductor substrate, the semiconductor substrate having first and second major opposing surfaces;

a first magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a second magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a third magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a fourth magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a first electronic circuit channel coupled to the first magnetic field sensing element and to the third magnetic field sensing element, the first electronic circuit channel operable to generate a first difference signal as a difference of signals generated by the first magnetic field sensing element and the third magnetic field sensing element, the first electronic circuit channel operable to generate the first difference signal having a first phase; and

a second electronic circuit channel coupled to the second magnetic field sensing element and to the fourth magnetic field sensing element, the second electronic circuit channel operable to generate a second difference signal as a difference of signals generated by the second magnetic field sensing element and the fourth magnetic field sensing element, the second electronic circuit channel operable to generate the second difference signal having a second phase approximately +/−

ninety degrees apart from the first phase regardless of a speed of the movement of the object, wherein a sign of the ninety degrees is indicative of a direction of the movement of the object, wherein the first magnetic field sensing element comprises an axis of maximum sensitivity substantially perpendicular to the first opposing surface of the substrate, wherein the second magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate, wherein the third magnetic field sensing element comprises an axis of maximum sensitivity substantially perpendicular to the first opposing surface of the substrate, and wherein the fourth magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate.

24. A magnetic field sensor for sensing a movement of an object, the magnetic field sensor comprising:

a semiconductor substrate, the semiconductor substrate having first and second major opposing surfaces;

a first magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a second magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a third magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a fourth magnetic field sensing element disposed on or under the first surface of the semiconductor substrate;

a first electronic circuit channel coupled to the first magnetic field sensing element and to the third magnetic field sensing element, the first electronic circuit channel operable to generate a first difference signal as a difference of signals generated by the first magnetic field sensing element and the third magnetic field sensing element, the first electronic circuit channel operable to generate the first difference signal having a first phase; and

a second electronic circuit channel coupled to the second magnetic field sensing element and to the fourth magnetic field sensing element, the second electronic circuit channel operable to generate a second difference signal as a difference of signals generated by the second magnetic field sensing element and the fourth magnetic field sensing element, the second electronic circuit channel operable to generate the second difference signal having a second phase approximately +/−

ninety degrees apart from the first phase regardless of a speed of the movement of the object, wherein a sign of the ninety degrees is indicative of a direction of the movement of the object, wherein the axes of maximum sensitivity of the second and fourth magnetic field sensing elements are substantially parallel to a first orthogonal axis, the magnetic field sensor further comprising;

a fifth magnetic field sensing element, disposed on the first surface of the semiconductor substrate, wherein the fifth magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate and substantially parallel to a second orthogonal axis perpendicular to the first orthogonal axis; and

a sixth magnetic field sensing element disposed on the first surface of the semiconductor substrate, wherein the sixth magnetic field sensing element comprises an axis of maximum sensitivity substantially parallel to the first opposing surface of the substrate and substantially parallel to the second orthogonal axis.

25. The magnetic field sensor of claim 24, wherein the first and third magnetic field sensing elements comprise respective axes of maximum sensitivity substantially perpendicular to the first opposing surface of the substrate, and wherein the second, fourth, fifth, and sixth magnetic field sensing elements comprise respective axes of maximum sensitivity substantially parallel to the first opposing surface of the substrate.

26. The magnetic field sensor of claim 24, wherein the first and third magnetic field sensing elements comprise planar Hall effect elements and the second, fourth, fifth, and sixth magnetic field sensing elements comprise magnetoresistance elements or vertical Hall elements.