Semiconductor device and manufacturing method thereof

• US 10,854,640 B2
• Filed: 11/04/2019
• Issued: 12/01/2020
• Est. Priority Date: 09/04/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sakakura, Masayuki, Oikawa, Yoshiaki, Yamazaki, Shunpei, Sakata, Junichiro, Tsubuku, Masashi, Akimoto, Kengo, Hosoba, Miyuki
• Primary Examiner(s): Tran, Tan N
• Application Number:
  US16/672,988
• Publication Number:
  US 20200066761A1
• Time in Patent Office: 393 Days
• Field of Search: 257 43, 257 59, 257 72
• CPC Class Codes: G02F 1/134309 characterised by their geometrical arrangement
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2202/10 semiconductor
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors

Abstract

The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

Claims

1. A semiconductor device comprising:

a transistor; and

a capacitor,

wherein the transistor includes;

a gate electrode layer;

a first oxide semiconductor layer over the gate electrode layer with an insulating layer interposed therebetween; and

a source electrode layer and a drain electrode layer each electrically connected to the first oxide semiconductor layer,

wherein the capacitor includes;

a first conductive layer;

a second conductive layer over the first conductive layer with the insulating layer interposed therebetween; and

a second oxide semiconductor layer in contact with the second conductive layer,

wherein the gate electrode layer and the first conductive layer are formed on a same layer and include same material,

wherein the source electrode layer and the drain electrode layer and the second conductive layer include same material, and

wherein the first oxide semiconductor layer and the second oxide semiconductor layer include same material.

2. The semiconductor device according to claim 1,

wherein the semiconductor device is a display device, and

wherein the transistor and the capacitor are provided in a pixel portion.

3. The semiconductor device according to claim 1,

wherein each of the gate electrode layer, the first conductive layer, the source electrode layer and the drain electrode layer, and the second conductive layer is formed using a light-transmitting conductive layer.

4. A semiconductor device comprising:

a transistor;

a capacitor; and

a light-transmitting conductive layer over and overlapping with the transistor and not overlapping with the capacitor,

wherein the transistor includes;

a gate electrode layer;

a first oxide semiconductor layer over the gate electrode layer with an insulating layer interposed therebetween; and

a source electrode layer and a drain electrode layer each electrically connected to the first oxide semiconductor layer,

wherein the capacitor includes;

a first conductive layer;

a second conductive layer over the first conductive layer with the insulating layer interposed therebetween; and

a second oxide semiconductor layer in contact with the second conductive layer,

wherein the gate electrode layer and the first conductive layer are formed on a same layer and include same material,

wherein the source electrode layer and the drain electrode layer and the second conductive layer include same material, and

wherein the first oxide semiconductor layer and the second oxide semiconductor layer include same material.

5. The semiconductor device according to claim 4,

wherein the semiconductor device is a display device, and

wherein the transistor, the capacitor, and the light-transmitting conductive layer are provided in a pixel portion.

6. The semiconductor device according to claim 4,

wherein each of the gate electrode layer, the first conductive layer, the source electrode layer and the drain electrode layer, and the second conductive layer is formed using a second light-transmitting conductive layer.