Sensor system

• US 10,861,829 B2
• Filed: 12/26/2017
• Issued: 12/08/2020
• Est. Priority Date: 12/26/2017
• Status: Active Grant

• Current Assignee: Illumina Incorporated
• Original Assignee: Illumina Incorporated
• Inventors: Fung, Tracy Helen, Tran, Hai Quang
• Primary Examiner(s): Dinke, Bitew A
• Application Number:
  US16/609,554
• Publication Number:
  US 20200066684A1
• Time in Patent Office: 1,078 Days
• CPC Class Codes: G01N 21/6454 using an integrated detector array
• CPC Class Codes: H01L 2224/02372 connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 23/3135 Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/91 Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices

Abstract

A system includes an image sensor structure and a flow cell. The image sensor structure includes an image layer disposed over a base substrate. A device stack is disposed over the image layer. A bond pad is disposed in the device stack. A passivation stack is disposed over the device stack and the bond pad. An array of nanowells is disposed in a top layer of the passivation stack. A through-silicon via (TSV) is in electrical contact with the bond pad. The TSV extends through the base substrate. A redistribution layer (RDL) is disposed on a bottom surface of the base substrate. The RDL is in electrical contact with the TSV. The flow cell is disposed upon the top layer of the passivation stack to form a flow channel therebetween. The flow channel is disposed over the array of nanowells and the bond pad.

Claims

1. A system comprising:

an image sensor structure comprising;

an image layer disposed over a base substrate,

a device stack disposed over the image layer,

a bond pad disposed in the device stack,

a passivation stack disposed over the device stack and the bond pad,

an array of nanowells disposed in a top layer of the passivation stack,

a through-silicon via (TSV) in electrical contact with the bond pad, the TSV extending through the base substrate, and

a redistribution layer (RDL) disposed on a bottom surface of the base substrate, the RDL in electrical contact with the TSV; and

a flow cell disposed upon the top layer of the passivation stack to form a flow channel therebetween;

wherein the flow channel is disposed over the array of nanowells and extends over the bond pad;

wherein the passivation stack is disposed between the flow channel and the bond pad.

2. The system of claim 1, comprising:

a first (1^st) environmental protection layer disposed over a 1^st portion of the RDL;

mechanical support structures disposed over the 1^st environmental protection layer; and

wires bonded in electrical contact to a second (2^nd) portion of the RDL.

3. The system of claim 2, comprising:

a 2^nd environmental protection layer disposed over the 2^nd portion of the RDL;

wherein the 1^st and 2^nd environmental protection layers cover the entire RDL.

4. The system of claim 1, wherein the bond pad is a plurality of bond pads over which the flow channel is disposed.

5. The system of claim 1, wherein the passivation stack comprises:

a 1^st passivation layer disposed over the device stack and the bond pad; and

a 1^st chemical protection layer disposed over the 1^st passivation layer.

6. The system of claim 5, wherein the passivation stack comprises:

a 2^nd passivation layer disposed over the 1^st chemical protection layer; and

a 2^nd chemical protection layer disposed over the 2^nd passivation layer.

7. The system of claim 1, comprising:

an array of light detectors disposed in the image layer; and

an array of light guides disposed in the device stack, each light guide associated with at least one light detector of the array of light detectors.

8. The system of claim 7, wherein the passivation stack comprises a bottom surface in direct contact with a top surface of the light guides.

9. The system of claim 1, wherein the flow cell comprises:

a flow cell lid affixed to flow cell sidewalls, the flowcell sidewalls being bonded to the top layer of the passivation stack;

wherein the flowcell channel is formed by the flow cell lid, flow cell sidewalls and top layer of the passivation stack.

10. The system of claim 1, comprising:

a light shield layer disposed between the device stack and the passivation stack;

wherein, the bond pad extends through the light shield layer.

11. The system of claim 1, wherein a top surface of the bond pad is disposed below a bottom surface of the passivation stack.

12. The system of claim 1, wherein a top surface of the bond pad is in direct contact with a bottom surface of the passivation stack.

13. The system of claim 1, wherein an entire top surface of the bond pad is in direct contact with a bottom surface of the passivation stack.

14. A system comprising:

an image sensor structure comprising;

an image layer disposed over a base substrate, the image layer comprising an array of light detectors disposed therein,

a device stack disposed over the image layer,

a plurality of bond pads disposed in the device stack,

an array of light guides disposed in the device stack,

a passivation stack disposed over the device stack and the plurality of bond pads,

an array of nanowells disposed in a top layer of the passivation stack,

through-silicon via (TSV) in electrical contact with the bond pads of the plurality of bond pads, the TSV extending through the base substrate, and

a redistribution layer (RDL) disposed on a bottom surface of the base substrate, the RDL in electrical contact with the TSV; and

a flow cell disposed upon the top layer of the passivation stack to form a flow channel therebetween;

wherein the flow channel is disposed over the array of nanowells and extends over the plurality of bond pads;

wherein the passivation stack is disposed between the flow channel and the plurality of bond pads.

15. The system of claim 14, comprising:

a 1^st environmental protection layer disposed over a 1^st portion of the RDL;

mechanical support structures disposed over the 1^st environmental protection layer;

wires bonded in electrical contact to a 2^nd portion of the RDL; and

a 2^nd environmental protection layer disposed over the 2^nd portion of the RDL;

wherein the 1^st and 2^nd environmental protection layers cover the entire RDL.

16. The system of claim 14, wherein the passivation stack comprises:

a 1^st passivation layer disposed over the device stack and the plurality of bond pads; and

a 1^st chemical protection layer disposed over the 1^st passivation layer.

17. The system of claim 16, wherein the passivation stack comprises:

a 2^nd passivation layer disposed over the 1^st chemical protection layer; and

a 2^nd chemical protection layer disposed over the 2^nd passivation layer.

18. The system of claim 14, wherein a top surface of each bond pad of the plurality of bond pads is in direct contact with a bottom surface of the passivation stack.

19. The system of claim 14, wherein an entire top surface of each bond pad of the plurality of bond pads is in direct contact with a bottom surface of the passivation stack.