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Integrated circuit structures

  • US 10,872,820 B2
  • Filed: 08/25/2017
  • Issued: 12/22/2020
  • Est. Priority Date: 08/26/2016
  • Status: Active Grant
First Claim
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1. A device structure, comprising:

  • a body, comprising a monocrystalline semiconductor material, adjacent to an isolation dielectric;

    a gate stack adjacent to a sidewall of the body, the gate stack including a gate electrode separated from the sidewall by a gate dielectric;

    a source and a drain coupled to the body on opposite sides of the gate stack;

    a front-side interconnect metallization layer coupled to at least one of the source, drain, or gate electrode; and

    a back-side device layer over a back-side surface of the body, opposite the front-side interconnect metallization layer, wherein the back-side device layer comprises a second semiconductor material having a different composition than that of the body; and

    a back-side device terminal electrically coupled to the back-side device layer, wherein;

    the structure comprises a first field effect transistor (FET) stacked over a second FET;

    the second semiconductor material is monocrystalline;

    a second gate stack is coupled to the second semiconductor material; and

    the back-side device terminal further comprises a source or a drain of the second FET, which is coupled to the second semiconductor material.

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