Semiconductor device

  • US 10,872,890 B2
  • Filed: 02/12/2018
  • Issued: 12/22/2020
  • Est. Priority Date: 12/17/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a core device over the substrate and comprising a first gate electrode having a bottom surface and a sidewall, wherein the bottom surface of the first gate electrode and the sidewall of the first gate electrode define inside the first gate electrode a first interior angle, and the first interior angle is an obtuse angle; and

    an input/output (I/O) device over the substrate and comprising a second gate electrode having a bottom surface and a sidewall, wherein the bottom surface of the second gate electrode and the sidewall of the second gate electrode define inside the second gate electrode a second interior angle, and the second interior angle is greater than the first interior angle.

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