Chalcogenide sputtering target and method of making the same

  • US 10,889,887 B2
  • Filed: 08/07/2017
  • Issued: 01/12/2021
  • Est. Priority Date: 08/22/2016
  • Status: Active Grant
First Claim
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1. A physical vapor deposition device comprising a phase change material sputtering target, the phase change material sputtering target comprising:

  • primary matrix including at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table; and

    at least one additional phase substantially homogenously dispersed in the primary matrix, wherein the sputtering target has a density of at least 95% of theoretical density, wherein;

    the primary matrix includes arsenic and selenium and the at least one additional phase includes a germanium and selenium phase and a silicon phase;

    the primary matrix includes arsenic, tellurium and germanium and the at least one additional phase includes a silicon phase;

    orthe primary matrix includes arsenic and selenium and the at least one additional phase includes a germanium and tellurium phase.

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