Semiconductor wafer dicing crack prevention using chip peripheral trenches
First Claim
Patent Images
1. A method of forming a semiconductor device, comprising:
- providing a semiconductor base substrate comprising a substantially planar growth surface and one or more crystallographic cleavage planes and an epitaxial first type III-V semiconductor layer on the planar growth surface; and
forming a first trench that vertically extends from an upper surface of the first type III-V semiconductor layer at least to the planar growth surface,wherein the first trench has a first trench length direction that is antiparallel to the one or more crystallographic cleavage planes.
1 Assignment
0 Petitions
Accused Products
Abstract
A method includes providing a semiconductor base substrate having a substantially planar growth surface and one or more preferred crystallographic cleavage planes and an epitaxial first type III-V semiconductor layer on the planar growth surface. A first trench that vertically extends from an upper surface of the first type III-V semiconductor layer is formed at least to the planar growth surface. The first trench has a first trench length direction that is antiparallel to the one or more preferred crystallographic cleavage planes.
7 Citations
13 Claims
-
1. A method of forming a semiconductor device, comprising:
-
providing a semiconductor base substrate comprising a substantially planar growth surface and one or more crystallographic cleavage planes and an epitaxial first type III-V semiconductor layer on the planar growth surface; and forming a first trench that vertically extends from an upper surface of the first type III-V semiconductor layer at least to the planar growth surface, wherein the first trench has a first trench length direction that is antiparallel to the one or more crystallographic cleavage planes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
Specification