Semiconductor device
First Claim
1. A semiconductor device comprising:
- a drift region of a first-conductivity-type provided in a semiconductor substrate;
a base region of a second-conductivity-type provided above the drift region on an upper surface side in the semiconductor substrate;
a plurality of trench portions arranged next to each other in a predetermined arrangement direction on an upper surface of the semiconductor substrate;
an emitter region of a first-conductivity-type which has a higher doping concentration than the drift region and is provided in a mesa portion between adjacent ones of the plurality of trench portions;
an accumulation region of a first-conductivity-type which has a higher doping concentration than the drift region and is provided in a mesa portion between adjacent ones of the plurality of trench portions; and
a second-conductivity-type region of a second-conductivity-type which has a higher doping concentration than the base region and is provided in a mesa portion between adjacent ones of the plurality of trench portions;
wherein the accumulation region and the second-conductivity-type region are provided between the base region and the drift region in a non-channel mesa portion that does not have the emitter region provided therein and that is of mesa portions between adjacent ones of the plurality of trench portions, andthe accumulation region is provided above the second-conductivity-type region and below the base region.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention provides a semiconductor device including (a) a drift region of a first-conductivity-type, (b) a base region of a second-conductivity-type, (c) a plurality of trench portions arranged next to each other in a predetermined arrangement direction on the upper surface of the semiconductor substrate, (d) an emitter region of a first-conductivity-type which has a higher doping concentration than the drift region, (e) an accumulation region of a first-conductivity-type which has a higher doping concentration than the drift region, and (f) a second-conductivity-type region of a second-conductivity-type which has a higher doping concentration than the base region, wherein the accumulation region and the second-conductivity-type region are provided between the base region and the drift region in a non-channel mesa portion that does not have the emitter region provided therein and that is of mesa portions between adjacent ones of the plurality of trench portions.
5 Citations
13 Claims
-
1. A semiconductor device comprising:
-
a drift region of a first-conductivity-type provided in a semiconductor substrate; a base region of a second-conductivity-type provided above the drift region on an upper surface side in the semiconductor substrate; a plurality of trench portions arranged next to each other in a predetermined arrangement direction on an upper surface of the semiconductor substrate; an emitter region of a first-conductivity-type which has a higher doping concentration than the drift region and is provided in a mesa portion between adjacent ones of the plurality of trench portions; an accumulation region of a first-conductivity-type which has a higher doping concentration than the drift region and is provided in a mesa portion between adjacent ones of the plurality of trench portions; and a second-conductivity-type region of a second-conductivity-type which has a higher doping concentration than the base region and is provided in a mesa portion between adjacent ones of the plurality of trench portions; wherein the accumulation region and the second-conductivity-type region are provided between the base region and the drift region in a non-channel mesa portion that does not have the emitter region provided therein and that is of mesa portions between adjacent ones of the plurality of trench portions, and the accumulation region is provided above the second-conductivity-type region and below the base region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
Specification