Contact etching and metallization for improved LED device performance and reliability

  • US 10,916,683 B2
  • Filed: 01/07/2020
  • Issued: 02/09/2021
  • Est. Priority Date: 11/20/2015
  • Status: Active Grant
First Claim
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1. A method of manufacturing a light emitting device, the method comprising:

  • providing a semiconductor structure comprising an active layer between a first semiconductor layer and a second semiconductor layer, the first semiconductor layer comprising a first surface facing the active layer, and the second semiconductor layer comprising a second surface opposite the active layer;

    etching through the second semiconductor layer and through the active layer, to the first surface, to create a via comprising walls;

    forming a dielectric structure with at least one angled surface within the via with the at least one angled surface extending from at least one of the walls to the first surface;

    forming a dielectric layer over at least a portion of the second surface of the second semiconductor layer and the at least one angled surface; and

    forming a metal layer over the dielectric layer and in an opening in the dielectric layer within the via such that the metal layer contacts the first surface of the first semiconductor layer.

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