Contact etching and metallization for improved LED device performance and reliability

• US 10,916,683 B2
• Filed: 01/07/2020
• Issued: 02/09/2021
• Est. Priority Date: 11/20/2015
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Inventors: Chong, David, Teo, Yeow-Meng
• Primary Examiner(s): Pham, Thanhha S
• Application Number:
  US16/736,424
• Publication Number:
  US 20200144454A1
• Time in Patent Office: 399 Days
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light emitting device includes a vertical via through the P-type semiconductor layer and the active layer. Using a vertical via reduces quantum well damage, allows shortening of P-N spacing, and allows increased reflective area. A dielectric structure is formed in the via to provide a sloped wall that extends to an upper surface of the device. Another dielectric layer covers the upper surface and the sloped wall, and provides select contacts to the semiconductor layers. A metal layer is subsequently applied. Because the dielectric layers provide a continuous slope from the surface of the device, the metal layer does not include a vertical drop. Because the active layer does not extend into the via, the contact to the N-type semiconductor layer may be situated closer to the wall of the via, increasing the area available for a reflective layer.

Claims

1. A method of manufacturing a light emitting device, the method comprising:

providing a semiconductor structure comprising an active layer between a first semiconductor layer and a second semiconductor layer, the first semiconductor layer comprising a first surface facing the active layer, and the second semiconductor layer comprising a second surface opposite the active layer;

etching through the second semiconductor layer and through the active layer, to the first surface, to create a via comprising walls;

forming a dielectric structure with at least one angled surface within the via with the at least one angled surface extending from at least one of the walls to the first surface;

forming a dielectric layer over at least a portion of the second surface of the second semiconductor layer and the at least one angled surface; and

forming a metal layer over the dielectric layer and in an opening in the dielectric layer within the via such that the metal layer contacts the first surface of the first semiconductor layer.

2. The method of claim 1, further comprising etching the dielectric layer to form the opening before forming the metal layer over the dielectric layer.

3. The method of claim 1, further comprising:

forming another opening in the dielectric layer to expose the second surface of the second semiconductor layer; and

forming a portion of the metal layer in the other opening in electrical contact with the second semiconductor layer.

4. The method of claim 1, wherein the forming the dielectric structure comprises:

applying a dielectric material in the via, and

etching the dielectric material to form the at least one angled surface.

5. The method of claim 1, further comprising forming a reflective layer on the second surface of the second semiconductor layer such that the dielectric layer covers at least a portion of the reflective layer.

6. The method of claim 5, wherein the forming the reflective layer comprises depositing a silver material and a barrier layer.

7. The method of claim 6, wherein the depositing the barrier layer comprises depositing one or more of a TiW, TiWN and TiN material.

8. The method of claim 1, wherein the etching comprises etching through the second semiconductor layer and through the active layer to form the via with the walls orthogonal to the active layer.

9. A method comprising:

forming a semiconductor structure comprising an active layer between a first semiconductor layer and a second semiconductor layer, the first semiconductor layer comprising a first surface facing the active layer;

forming a via through the second semiconductor layer and the active layer and extending to the first semiconductor layer;

forming a first triangular structure in the via, the first triangular structure comprising two sides at a right angle to each other and a third side having a sloped surface between a first side of the via and the first semiconductor layer;

forming a second triangular structure in the via spaced apart from the first triangular structure along the first surface of the semiconductor layer, the second triangular structure comprising two sides at a right angle to each other and a third side having a sloped surface between a second side of the via and the first semiconductor layer; and

depositing a metal layer over the first triangular structure and the second triangular structure and in contact with the first semiconductor layer.

10. The method of claim 9, wherein the depositing the metal layer further comprises depositing the metal layer in electrical contact with the second semiconductor layer.

11. The method of claim 9, wherein the first triangular structure and the second triangular structure are formed from a dielectric material.

12. The method of claim 9, wherein the forming the via comprises etching through the second semiconductor layer and the active layer, to the first semiconductor layer.

13. The method of claim 9, further comprising depositing a dielectric layer over at least a portion of the second semiconductor layer that faces away from the active layer and over the at least one of the first triangular structure and the second triangular structure.

14. The method of claim 13, wherein the depositing the metal layer over the first triangular structure and the second triangular structure further comprises depositing the metal layer over the dielectric layer.

15. The method of claim 9, further comprising depositing a reflective layer that extends over the second semiconductor layer.

16. A method of fabricating a light emitting device comprising:

providing a semiconductor structure comprising an active layer between a first semiconductor layer and a second semiconductor layer, the second semiconductor layer comprising a first surface opposite the active layer;

etching through the second semiconductor layer, the active layer and at least a portion of the first semiconductor layer to create a via comprising walls formed by the semiconductor structure and a base formed by a remaining portion of the first semiconductor layer;

forming a dielectric structure with at least one angled surface within the via with the at least one angled surface extending from at least one of the walls to the base;

forming a dielectric layer over at least a portion of the first surface of the second semiconductor layer and the at least one angled surface; and

forming a metal layer over the dielectric layer and in an opening in the dielectric layer within the via such that the metal layer contacts the base.

17. The method of claim 16, further comprising etching the dielectric layer to form the opening before forming the metal layer over the dielectric layer.

18. The method of claim 16, further comprising:

forming another opening in the dielectric layer to expose the first surface of the second semiconductor layer; and

forming a portion of the metal layer in the other opening in electrical contact with the second semiconductor layer.

19. The method of claim 16, further comprising forming a reflective layer on the first surface of the second semiconductor layer such that the dielectric layer covers at least a portion of the reflective layer.

20. The method of claim 19, wherein the forming the reflective layer comprises depositing a silver material and a barrier layer.