Black matrix, color filter and method of preparing the same, display panel, and display device

  • US 10,928,668 B2
  • Filed: 06/12/2019
  • Issued: 02/23/2021
  • Est. Priority Date: 10/27/2015
  • Status: Active Grant
First Claim
Patent Images

1. A display panel, comprising:

  • an array substrate including a first thin film transistor (TFT), a second thin film transistor (TFT), and a passivation layer on the first TFT and the second TFT;

    a color filter (CF) substrate provided oppositely to the array substrate;

    a liquid crystal layer provided between the array substrate and the CF substrate;

    a main support column provided between the CF substrate and the array substrate; and

    a secondary support column provided between the CF substrate and the array substrate;

    wherein the CF substrate comprises a base substrate, a color filter layer on the base substrate, and a black matrix on the base substrate, wherein the black matrix comprises;

    a plurality of first walls extending along a first direction; and

    a plurality of second walls extending along a second direction and intersected with the plurality of first walls along the first direction at intersection regions, wherein the plurality of first walls and the plurality of second walls form a mesh-like structure with a plurality of openings, the plurality of openings are filled with the color filter layer to form pixels,wherein at least one of the intersection regions is configured to receive the main support column including a top end, and at least another one of the intersection regions is configured to receive the secondary support column including a top end, and a dimension of the top end of the main support column is smaller than a dimension of the top end of the secondary support column, the main support column is provided between a position on the passivation layer corresponding to the first TFT and the at least one of the intersection regions, and the secondary support column is provided between another position of the passivation layer corresponding to the second TFT and the at least another one of the intersection regions,wherein the at least one of the intersection regions to receive the main support column is widened to be larger than a dimension of the top end of the main support column to be received therein, and the widened intersection region has an oval-like shape or a pentagon-like shape, and a distance d1 between a boundary of the top end of the main support column and a boundary of the widened intersection region in the at least one of the intersection regions is in a range of about 0.5 μ

    m to about 1 μ

    m, and a press gap is about 0.1% to 0.8%.

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